公开(公告)号：US12100749B2

公开(公告)日：2024-09-24

申请号：US18059700

申请日：2022-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Sangwook Kim ,  Sanghyun Jo ,  Jinseong Heo ,  Hyangsook Lee

IPC: H01L29/51 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/516 ,  H01L21/0228 ,  H01L29/78391

Abstract: A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：US11984514B2

公开(公告)日：2024-05-14

申请号：US18324638

申请日：2023-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taehwan Moon ,  Hagyoul Bae ,  Seunggeol Nam ,  Sangwook Kim ,  Kwanghee Lee

IPC: H01L29/86 ,  H10B69/00 ,  H10K10/50 ,  H10K19/00

CPC classification number: H01L29/86 ,  H10B69/00 ,  H10K10/50 ,  H10K19/00 ,  H10K19/201

Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

公开(公告)号：US11887989B2

公开(公告)日：2024-01-30

申请号：US16943161

申请日：2020-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook Kim ,  Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo

IPC: H01L29/786 ,  H01L27/12 ,  G06N3/08 ,  G06N3/063

CPC classification number: H01L27/1207 ,  G06N3/063 ,  G06N3/08

Abstract: A semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. The third transistor may include a gate insulating film including a ferroelectric material. The third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.

公开(公告)号：US20210280720A1

公开(公告)日：2021-09-09

申请号：US17112355

申请日：2020-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Jinseong Heo ,  Sangwook Kim ,  Taehwan Moon ,  Sanghyun Jo

IPC: H01L29/78 ,  H01L29/51 ,  H01L27/1159

Abstract: Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.

公开(公告)号：US10531243B2

公开(公告)日：2020-01-07

申请号：US15344464

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd ,  Seoul National University R&DB Foundation

Inventor： Yong-Seok Park ,  Soo-Young Jang ,  Daedong Park ,  Seongsoo Hong ,  Sangwook Kim

IPC: H04W4/12 ,  H04W76/11

Abstract: A method for transmitting data in a mobile device includes transmitting, to a reception device, a connection request message comprising information indicating whether the transmission device supports message transmission having temporal correlation; receiving, from the reception device, a connection response message comprising information indicating whether the reception device supports the message transmission in response to the connection request message; and if both the transmission device and the reception device support the message transmission, transmitting, to the reception device, at least two of messages having temporal correlation, the at least two of messages comprising identification information, wherein the identification information indicates that the at least two of messages have temporal correlation.

公开(公告)号：US09530639B2

公开(公告)日：2016-12-27

申请号：US14537207

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Kyunghoon Cho ,  Sangwook Kim ,  Donghyeok Choi

IPC: B05D5/12 ,  C09K11/02 ,  H01L33/32 ,  H01L31/18 ,  H01L41/37 ,  H01L31/0328 ,  H01L21/02 ,  B82Y10/00 ,  H01L29/24 ,  H01L29/06

CPC classification number: H01L21/02565 ,  B82Y10/00 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02614 ,  H01L21/02628 ,  H01L29/0673 ,  H01L29/24

Abstract: A method of preparing a ZnO nanowire, and a ZnO nanowire prepared by the method are provided. The method of preparing a ZnO nanowire includes: preparing a zinc chalcogenide solution by dissolving zinc chalcogenide in a solvent; applying the zinc chalcogenide solution onto a substrate; drying the zinc chalcogenide solution applied onto the substrate; and annealing the substrate in the presence of oxygen after the drying the zinc chalcogenide solution.

Abstract translation: 提供了制备ZnO纳米线的方法和通过该方法制备的ZnO纳米线。 制备ZnO纳米线的方法包括：通过将硫属化合物溶解在溶剂中来制备硫属化合物溶液; 将锌硫属化物溶液施加到基底上; 干燥施加到基底上的硫属化合物溶液; 并在干燥锌硫属化物溶液之后在氧气存在下退火底物。

公开(公告)号：US20250004361A1

公开(公告)日：2025-01-02

申请号：US18437779

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong Cho ,  Hun Kang ,  Sangwook Kim ,  Useong Kim ,  Heungsuk Oh ,  Hee-Jun Lee ,  Jeeeun Jung

IPC: G03F1/36

Abstract: Disclosed are semiconductor fabrication methods and optical proximity correction (OPC) methods. The semiconductor fabrication method comprises performing OPC on a design pattern of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate by using a photomask manufactured with the corrected layout. Performing the OPC includes generating shape points on a contour of the design pattern, producing a hash value of the shape point, selecting a first unique shape point that represents first shape points, determining a first correction bias of the first unique shape point, and creating a correction pattern by applying the first correction bias in common to the first shape points. Producing the hash value includes generating a query range around a target shape point and, based on geometry analysis in the query range, producing the hash value.

公开(公告)号：US12176413B2

公开(公告)日：2024-12-24

申请号：US18179598

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Sangwook Kim ,  Yunseong Lee ,  Jinseong Heo

IPC: H01L29/51 ,  H01L27/06 ,  H01L49/02

Abstract: A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.

公开(公告)号：US12094971B2

公开(公告)日：2024-09-17

申请号：US18310022

申请日：2023-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Jinseong Heo ,  Sangwook Kim ,  Sanghyun Jo

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/08 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H10B51/30

CPC classification number: H01L29/78391 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/0228 ,  H01L29/0847 ,  H01L29/40111 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/6684 ,  H01L21/02181 ,  H01L21/02189 ,  H10B51/30

Abstract: An electronic device includes a ferroelectric layer arranged on a channel region and a gate electrode arranged on the ferroelectric layer. The ferroelectric layer includes a plurality of first oxide monolayers and a second oxide monolayers that is arranged between the substrate and the gate electrode and include a material different from a material of the first oxide monolayers. The first oxide monolayers include oxide monolayers that are alternately formed and include materials different from one another.

公开(公告)号：US11978798B2

公开(公告)日：2024-05-07

申请号：US17515984

申请日：2021-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol Nam ,  Jinseong Heo ,  Sangwook Kim ,  Hagyoul Bae ,  Taehwan Moon ,  Yunseong Lee

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/51 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/78391 ,  H01L29/0847 ,  H01L29/516 ,  H01L29/7851 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/42392

Abstract: Provided is a ferroelectric semiconductor device including a source and a drain having different polarities. The ferroelectric semiconductor may include a ferroelectric including zirconium oxide (ZrO2), hafnium oxide (HfO2), and/or hafnium-zirconium oxide (HfxZr1-xO, 0