公开(公告)号：US11824076B2

公开(公告)日：2023-11-21

申请号：US17731022

申请日：2022-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghoe Cho ,  Chungsun Lee ,  Yoonha Jung ,  Chajea Jo

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/48 ,  H01L21/683

CPC classification number: H01L27/14634 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/32 ,  H01L27/1469 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/32225 ,  H01L2924/1431 ,  H01L2924/1434

Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.

公开(公告)号：US11569201B2

公开(公告)日：2023-01-31

申请号：US17509750

申请日：2021-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoeun Kim ,  Ji Hwang Kim ,  Jisun Yang ,  Seunghoon Yeon ,  Chajea Jo ,  Sang-Uk Han

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538

Abstract: A semiconductor package includes a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a first semiconductor structure and a second semiconductor structure that are on the first semiconductor chip and spaced apart from each other across the second semiconductor chip, and a resin-containing member between the second semiconductor chip and the first semiconductor structure and between the second semiconductor chip and the second semiconductor structure. The semiconductor package may be fabricated at a wafer level.

公开(公告)号：US11545417B2

公开(公告)日：2023-01-03

申请号：US17162418

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chajea Jo ,  Ohguk Kwon ,  Namhoon Kim ,  Hyoeun Kim ,  Seunghoon Yeon

IPC: H01L23/48 ,  H01L25/065 ,  H01L21/768 ,  H01L23/00

Abstract: An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.

公开(公告)号：US11335719B2

公开(公告)日：2022-05-17

申请号：US16802683

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghoe Cho ,  Chungsun Lee ,  Yoonha Jung ,  Chajea Jo

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/48 ,  H01L21/683

Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.

公开(公告)号：US11152416B2

公开(公告)日：2021-10-19

申请号：US16507623

申请日：2019-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hwang Kim ,  Chajea Jo ,  Hyoeun Kim ,  Jongbo Shim ,  Sang-Uk Han

IPC: H01L31/00 ,  H01L27/146 ,  H01L23/00

Abstract: A semiconductor package includes a first semiconductor chip. A second semiconductor chip is below the first semiconductor chip. A third semiconductor chip is below the second semiconductor chip. The second semiconductor chip includes a first surface in direct contact with the first semiconductor chip, and a second surface facing the third semiconductor chip. A first redistribution pattern is on the second surface of the second semiconductor chip and is electrically connected to the third semiconductor chip. The third semiconductor chip includes a third surface facing the second semiconductor chip. A conductive pad is on the third surface.

公开(公告)号：US20210013181A1

公开(公告)日：2021-01-14

申请号：US16742341

申请日：2020-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanguk Han ,  Chajea Jo ,  Hyoeun Kim ,  Sunkyoung Seo

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/00

Abstract: A package-on-package type package includes a lower semiconductor package and an upper semiconductor package. The lower semiconductor package includes a first semiconductor device including a through electrode, a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode, a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, a second molding member covering a sidewall of the first molding member, and an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode.

公开(公告)号：US08802495B2

公开(公告)日：2014-08-12

申请号：US13955259

申请日：2013-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hwang Kim ,  Tae Hong Min ,  Chajea Jo ,  Taeje Cho ,  Young Kun Jee ,  Yun Seok Choi

IPC: H01L21/50 ,  H01L21/56

CPC classification number: H01L21/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor package includes preparing a parent substrate including package board parts laterally spaced apart from each other, mounting a first chip including a through-via electrode on each of the package board parts, forming a first mold layer on the parent substrate having the first chips, planarizing the first mold layer to expose back sides of the first chips, etching the exposed back sides of the first chips to expose back sides of the through-via electrodes, forming a passivation layer on the planarized first mold layer, the etched back sides of the first chips, and the back sides of the through-via electrodes, and selectively removing the passivation layer to expose the back sides of the through-via electrodes.

Abstract translation: 制造半导体封装的方法包括：准备包括彼此横向隔开的封装板部分的母基板，在每个封装板部件上安装包括通孔电极的第一芯片，在母基板上形成第一模层 具有第一芯片，平坦化第一模具层以暴露第一芯片的背面，蚀刻第一芯片的暴露的背面以暴露通孔电极的背面，在平坦化的第一模具层上形成钝化层， 第一芯片的蚀刻背面和通孔电极的背面，并且选择性地去除钝化层以暴露通孔电极的背面。