公开(公告)号：US20180331076A1

公开(公告)日：2018-11-15

申请号：US16046471

申请日：2018-07-26

申请人： Samsung Electronics Co., Ltd.

发明人： Sang-Sick PARK ,  Geol Nam ,  Tae Hong Min ,  Jihwan Hwang

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L25/00 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/17 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13117 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16113 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/9211 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06586 ,  H01L2924/01058 ,  H01L2924/0665 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2224/83 ,  H01L2224/81

摘要： A semiconductor package includes a plurality of semiconductor chips on a substrate. The semiconductor chips include a first semiconductor chip, a second semiconductor chip, and a third semiconductor chip that are sequentially stacked on the substrate. The semiconductor package further includes a plurality of non-conductive layers between the substrate and the first semiconductor chip and between adjacent semiconductor chips among the semiconductor chips. The semiconductor chips include smaller widths as a distance from the substrate increases. Each of the non-conductive layers includes an extension protruding outward from a side surface of an overlying one of the semiconductor chips.

公开(公告)号：US08802495B2

公开(公告)日：2014-08-12

申请号：US13955259

申请日：2013-07-31

申请人： Samsung Electronics Co., Ltd.

发明人： Ji Hwang Kim ,  Tae Hong Min ,  Chajea Jo ,  Taeje Cho ,  Young Kun Jee ,  Yun Seok Choi

IPC分类号： H01L21/50 ,  H01L21/56

CPC分类号： H01L21/50 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor package includes preparing a parent substrate including package board parts laterally spaced apart from each other, mounting a first chip including a through-via electrode on each of the package board parts, forming a first mold layer on the parent substrate having the first chips, planarizing the first mold layer to expose back sides of the first chips, etching the exposed back sides of the first chips to expose back sides of the through-via electrodes, forming a passivation layer on the planarized first mold layer, the etched back sides of the first chips, and the back sides of the through-via electrodes, and selectively removing the passivation layer to expose the back sides of the through-via electrodes.

摘要翻译： 制造半导体封装的方法包括：准备包括彼此横向隔开的封装板部分的母基板，在每个封装板部件上安装包括通孔电极的第一芯片，在母基板上形成第一模层 具有第一芯片，平坦化第一模具层以暴露第一芯片的背面，蚀刻第一芯片的暴露的背面以暴露通孔电极的背面，在平坦化的第一模具层上形成钝化层， 第一芯片的蚀刻背面和通孔电极的背面，并且选择性地去除钝化层以暴露通孔电极的背面。

公开(公告)号：US09589947B2

公开(公告)日：2017-03-07

申请号：US14566685

申请日：2014-12-10

申请人： Samsung Electronics Co., Ltd.

发明人： Jihwan Hwang ,  Young Kun Jee ,  Jung-Hwan Kim ,  Tae Hong Min ,  Kwang-chul Choi

IPC分类号： H01L25/00 ,  H01L25/18 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065 ,  H01L21/683 ,  H01L23/31

CPC分类号： H01L25/50 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3185 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L2221/68327 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/00

摘要： Provided are semiconductor devices and methods of manufacturing the same. The semiconductor package includes a substrate, a first semiconductor chip mounted on the circuit substrate and having a first width, a second semiconductor chip overlying the first semiconductor chip and having a second width greater than the first width, and a first under filler disposed between the first and second semiconductor chips, covering a side surface of the first semiconductor chip and having an inclined side surface.

摘要翻译： 提供半导体器件及其制造方法。 半导体封装包括基板，安装在电路基板上并具有第一宽度的第一半导体芯片，覆盖第一半导体芯片并且具有大于第一宽度的第二宽度的第二半导体芯片，以及设置在第一半导体芯片 第一和第二半导体芯片，覆盖第一半导体芯片的侧表面并具有倾斜的侧表面。

公开(公告)号：US20130260551A1

公开(公告)日：2013-10-03

申请号：US13903164

申请日：2013-05-28

申请人： Samsung Electronics Co., Ltd.

发明人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

IPC分类号： H01L21/48

CPC分类号： H01L21/4835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/06181 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.

摘要翻译： 在半导体器件中，有机绝缘图案设置在第一和第二重新布线图案之间。 有机绝缘图案可以吸收当第一和第二重新布线图案在加热下膨胀时发生的物理应力。 由于有机绝缘图案设置在第一和第二重新布线图案之间，所以可以相对于其中在重新布线图案之间设置半导体图案的半导体器件来增加绝缘性能。 此外，由于在第一和第二重新布线图案和有机绝缘图案之间以及基板和有机绝缘图案之间设置种子层图案，所以第一和第二布线图案的粘合强度提高。 这也减少了分层问题。 此外，种子层图案防止形成重新布线图案的金属扩散到有机绝缘图案。 因此，可以实现具有增强的可靠性的半导体器件。

公开(公告)号：US10930613B2

公开(公告)日：2021-02-23

申请号：US16438505

申请日：2019-06-12

申请人： Samsung Electronics Co., Ltd.

发明人： Sang Sick Park ,  Un Byoung Kang ,  Tae Hong Min ,  Teak Hoon Lee ,  Ji Hwan Hwang

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L25/18 ,  H01L21/56 ,  H01L25/00 ,  H01L25/065

摘要： A semiconductor package includes a first semiconductor chip having a first through substrate via (TSV), a second semiconductor chip stacked on the first semiconductor chip and a first adhesive layer disposed between the first semiconductor chip and the second semiconductor chip. The second semiconductor chip includes a second through substrate via connected to the first through substrate via. A side surface of the first adhesive layer is recessed from side surfaces of the first and second semiconductor chips.

公开(公告)号：US10651154B2

公开(公告)日：2020-05-12

申请号：US16046471

申请日：2018-07-26

申请人： Samsung Electronics Co., Ltd.

发明人： Sang-Sick Park ,  Geol Nam ,  Tae Hong Min ,  Jihwan Hwang

IPC分类号： H01L25/065 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L23/498

摘要： A semiconductor package includes a plurality of semiconductor chips on a substrate. The semiconductor chips include a first semiconductor chip, a second semiconductor chip, and a third semiconductor chip that are sequentially stacked on the substrate. The semiconductor package further includes a plurality of non-conductive layers between the substrate and the first semiconductor chip and between adjacent semiconductor chips among the semiconductor chips. The semiconductor chips include smaller widths as a distance from the substrate increases. Each of the non-conductive layers includes an extension protruding outward from a side surface of an overlying one of the semiconductor chips.

公开(公告)号：US09196505B2

公开(公告)日：2015-11-24

申请号：US13903164

申请日：2013-05-28

申请人： Samsung Electronics Co., Ltd.

发明人： Un-Byoung Kang ,  Kwang-Chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

IPC分类号： H01L21/00 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00 ,  H01L21/768 ,  H01L21/683 ,  H01L25/065 ,  H01L27/146 ,  H01L23/498

CPC分类号： H01L21/4835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/06181 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.

摘要翻译： 在半导体器件中，有机绝缘图案设置在第一和第二重新布线图案之间。 有机绝缘图案可以吸收当第一和第二重新布线图案在加热下膨胀时发生的物理应力。 由于有机绝缘图案设置在第一和第二重新布线图案之间，所以可以相对于其中在重新布线图案之间设置半导体图案的半导体器件来增加绝缘性能。 此外，由于在第一和第二重新布线图案和有机绝缘图案之间以及基板和有机绝缘图案之间设置种子层图案，所以第一和第二布线图案的粘合强度提高。 这也减少了分层问题。 此外，种子层图案防止形成重新布线图案的金属扩散到有机绝缘图案。 因此，可以实现具有增强的可靠性的半导体器件。

公开(公告)号：US09099541B2

公开(公告)日：2015-08-04

申请号：US14170062

申请日：2014-01-31

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji Hwang Kim ,  Sunpil Youn ,  Sangwon Kim ,  Kwang-chul Choi ,  Tae Hong Min

IPC分类号： H01L21/768 ,  H01L23/31 ,  H01L23/36 ,  H01L23/48 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L21/76898 ,  H01L21/563 ,  H01L21/768 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/481 ,  H01L23/49816 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.

摘要翻译： 半导体器件包括具有第一侧和第二侧的基板，使得第一和第二面彼此面对，贯穿基板的通孔塞，绝缘膜衬垫和防污染膜。 绝缘膜衬垫位于通孔插塞和衬底之间，并且绝缘膜衬套相对于第二侧具有凹陷表面。 防污染膜覆盖第二面，防污染膜位于凹陷表面上，并且在通孔插塞和基底之间。