公开(公告)号：US11847258B2

公开(公告)日：2023-12-19

申请号：US17520946

申请日：2021-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Insik Myung ,  Shinjae Jung ,  Inyoung Choi ,  Hoon Han

IPC: G06F3/01 ,  G06T19/00

CPC classification number: G06F3/013 ,  G06F3/011 ,  G06T19/006

Abstract: There is disclosed an augmented reality (AR) glasses device including: a camera, a transparent display, a communication circuit, a memory storing images of a plurality of external electronic devices, and a processor. The processor may be configured to control the AR glasses device to: acquire an image including an image of at least one external electronic device, acquire running application information of the at least one external electronic device, identify a first external electronic device corresponding to a gaze from among the at least one external electronic device from the acquired image, determine whether a specified application is running in the first external electronic device based on the running application information, and connect to the first external electronic device using a communication circuit, based on the specified application running.

公开(公告)号：USD1007454S1

公开(公告)日：2023-12-12

申请号：US29863683

申请日：2022-12-21

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

Abstract: FIG. 1 is a front perspective view of an electronic device showing our new design;
FIG. 2 is a front elevation view thereof;
FIG. 3 is a rear elevation view thereof;
FIG. 4 is a left side elevation view thereof;
FIG. 5 is a right side elevation view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is an enlarged view of the encircled portion in FIG. 1;
FIG. 9 is an enlarged view of the encircled portion in FIG. 1; and,
FIG. 10 is an enlarged view of the encircled portion in FIG. 5.
The short dash-dash broken lines in the figures illustrate portions of the electronic device that form no part of the claimed design. The dot-dot-dash broken lines encircling portions of the claimed design that are illustrated in enlargements form no part of the claimed design.

公开(公告)号：US20230215723A1

公开(公告)日：2023-07-06

申请号：US18147733

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNHYEA KO ,  Hoon Han ,  Soyoung Lee ,  Thanh Cuong Nguyen ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Daekeon Kim ,  Younjoung Cho ,  Jiyu Choi ,  Byungkeun Hwang

IPC: H01L21/02 ,  C23C16/455 ,  C23C2/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01L21/02323 ,  H01L21/0226 ,  C23C16/45525 ,  C23C2/026 ,  H01L21/31116

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

公开(公告)号：USD964336S1

公开(公告)日：2022-09-20

申请号：US29763658

申请日：2020-12-23

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US11437246B2

公开(公告)日：2022-09-06

申请号：US17008736

申请日：2020-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchan Kim ,  Youngtak Kim ,  Jungah Kim ,  Hoon Han ,  Geunjoo Baek ,  Chisung Ihn ,  Sangmoon Yun

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/311

Abstract: Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.

公开(公告)号：US09660186B2

公开(公告)日：2017-05-23

申请号：US15175463

申请日：2016-06-07

Applicant: Samsung ELectronics Co., Ltd.

Inventor： Jinhye Bae ,  Wonjun Lee ,  Yoonsung Han ,  Hoon Han ,  Kyu-Man Hwang ,  Yongsun Ko

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L21/66

CPC classification number: H01L43/12 ,  H01L22/12 ,  H01L27/101 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.

公开(公告)号：USD1073671S1

公开(公告)日：2025-05-06

申请号：US29966041

申请日：2024-09-30

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US20240429039A1

公开(公告)日：2024-12-26

申请号：US18597101

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Hyea Ko ,  Soyoung Lee ,  Hoon Han ,  Byungkeun Hwang ,  Jaewoon Kim ,  Younghun Sung ,  Younjoung Cho

IPC: H01L21/02 ,  C09D5/00 ,  C09D5/26 ,  C09D175/02 ,  C23C16/56 ,  H01L21/285 ,  H01L21/3105

Abstract: Methods of depositing a film are provided. The methods may include providing a substrate that includes a first surface and a second surface adjacent to the first surface; forming a polymer sacrificial layer on the first surface by using a molecular layer deposition (MLD) process; forming a first film on the second surface; and removing the polymer sacrificial layer formed on the first surface. A functional group density of the first surface may be higher than a functional group density of the second surface, and the polymer sacrificial layer may include a thermally decomposable polymer.

公开(公告)号：USD1047949S1

公开(公告)日：2024-10-22

申请号：US29906616

申请日：2023-11-07

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

Abstract: FIG. 1 is a front perspective view of an electronic device showing our new design;
FIG. 2 is a front elevation view thereof;
FIG. 3 is a rear elevation view thereof;
FIG. 4 is a left side elevation view thereof;
FIG. 5 is a right side elevation view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is an enlarged view of the encircled portion in FIG. 1;
FIG. 9 is an enlarged view of the encircled portion in FIG. 1; and,
FIG. 10 is an enlarged view of the encircled portion in FIG. 3.
The short dash-dash broken lines in the figures illustrate portions of the electronic device that form no part of the claimed design. The dot-dot-dash broken lines encircling portions of the claimed design that are illustrated in enlargements form no part of the claimed design.

公开(公告)号：USD1030754S1

公开(公告)日：2024-06-11

申请号：US29851048

申请日：2022-08-25

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

Abstract: FIG. 1 is a front perspective view of an electronic device showing our new design;
FIG. 2 is a front elevation view thereof;
FIG. 3 is a rear elevation view thereof;
FIG. 4 is a left side elevation view thereof;
FIG. 5 is a right side elevation view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is an enlarged view of the encircled portion in FIG. 1;
FIG. 9 is an enlarged view of the encircled portion in FIG. 1; and,
FIG. 10 is an enlarged view of the encircled portion in FIG. 5.
The short dash-dash broken lines in the figures illustrate portions of the electronic device that form no part of the claimed design. The dot-dot-dash broken lines encircling portions of the claimed design that are illustrated in enlargements form no part of the claimed design.