公开(公告)号：US06632735B2

公开(公告)日：2003-10-14

申请号：US09924240

申请日：2001-08-07

申请人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

发明人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31633

摘要： A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

摘要翻译： 公开了形成碳掺杂氧化硅层的方法。 碳掺杂氧化硅层通过向包含有机硅烷化合物和氧化气体的气体混合物施加电场而形成。 碳掺杂氧化硅层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，碳掺杂氧化硅层用作金属间介电层。 在另一个集成电路制造工艺中，掺杂碳的氧化硅层被结合到镶嵌结构中

公开(公告)号：US06562690B1

公开(公告)日：2003-05-13

申请号：US09594186

申请日：2000-06-13

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L2176

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平或约20W的脉冲RF功率水平 在占用周期的10％到30％的范围内达到约250W。

公开(公告)号：US06537929B1

公开(公告)日：2003-03-25

申请号：US09580505

申请日：2000-05-25

申请人： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

发明人： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC分类号： H01L2131

CPC分类号： H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1031

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

公开(公告)号：US06171945B2

公开(公告)日：2001-01-09

申请号：US09177044

申请日：1998-10-22

申请人： Robert P. Mandal ,  David Cheung ,  Wai-Fan Yau

发明人： Robert P. Mandal ,  David Cheung ,  Wai-Fan Yau

IPC分类号： H01L2131

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

摘要： A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.

摘要翻译： 一种用于通过含硅氢化物的化合物或任选地具有热不稳定性有机基团的混合物与基质表面上的过氧化物化合物反应沉积纳米多孔低介电常数膜的方法和装置。 将沉积的氧化硅基膜退火以形成留在具有泡沫结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间填充间隙。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。 优选的纳米多孔氧化硅基膜是通过1,3,5-三硅烷环己烷，双（甲酰氧基甲硅烷基）甲烷或双（乙酰氧基二硅烷基）甲烷和过氧化氢的反应制备的，然后进行包括逐渐升高的固化/退火。

公开(公告)号：US6156149A

公开(公告)日：2000-12-05

申请号：US852788

申请日：1997-05-07

申请人： David Cheung ,  Judy H. Huang ,  Wai-Fan Yau

发明人： David Cheung ,  Judy H. Huang ,  Wai-Fan Yau

IPC分类号： H01L21/31 ,  C23C16/52 ,  H01L21/027 ,  H01L21/768 ,  B32B31/00

CPC分类号： C23C16/52 ,  H01L21/0276 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.

摘要翻译： 本发明提供了一种用于沉积包括抗反射涂层和电介质层的双层结构的方法和装置，而没有任何中间工艺步骤，例如清洁步骤。 本发明能够通过减少由在电介质层的图形化中使用的光致抗蚀剂层内的入射辐射能的反射和折射引起的不精确度来提供更准确和更容易的结构制造。 此外，本发明的抗反射涂层还可以在形成在抗反射涂层上形成的层的图案化中用作蚀刻停止层。

公开(公告)号：US6127262A

公开(公告)日：2000-10-03

申请号：US852787

申请日：1997-05-07

申请人： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

发明人： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

IPC分类号： H01L21/302 ,  C23C16/30 ,  C23C16/34 ,  C23C16/52 ,  G03F7/09 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768

CPC分类号： C23C16/308 ,  C23C16/345 ,  C23C16/52 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76829

摘要： A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.

摘要翻译： 一种沉积蚀刻停止层的方法和装置。 该方法开始于将工艺气体引入其中设置衬底的处理室中。 然后在衬底上沉积蚀刻停止层。 然后将上覆层沉积在蚀刻停止层上。 蚀刻停止层基本上保护用于图案化上覆层的蚀刻剂的下层材料。 此外，蚀刻停止层还具有有利的光学特性，使其适合用作在蚀刻停止层下面的图案图案中的抗反射涂层。

公开(公告)号：US6086952A

公开(公告)日：2000-07-11

申请号：US97365

申请日：1998-06-15

申请人： Chi-I Lang ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  Shin-Puu Jeng ,  David Cheung

发明人： Chi-I Lang ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  Shin-Puu Jeng ,  David Cheung

IPC分类号： C08F212/12 ,  B05D7/24 ,  C08F230/08 ,  C08G61/12 ,  H01L21/312 ,  H01L21/316 ,  C23C16/00

CPC分类号： B05D1/60

摘要： A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.

摘要翻译： 一种形成具有低介电常数或半导体衬底的薄聚合物层的方法。 在一个实施方案中，该方法包括稳定的二对二甲苯的蒸发，将这种气态二聚体材料热解转化为反应性单体，以及将所得气态对二甲苯单体与一个或多个具有硅 - 氧键的共聚单体共混， 至少两个悬挂的碳 - 碳双键。 与聚对二甲苯-N均聚物相比，共聚物膜具有低介电常数，改善的热稳定性和与氧化硅层的优异粘附性。

公开(公告)号：US6054379A

公开(公告)日：2000-04-25

申请号：US21788

申请日：1998-02-11

申请人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

发明人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.

公开(公告)号：US5968324A

公开(公告)日：1999-10-19

申请号：US672888

申请日：1996-06-28

申请人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

发明人： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

IPC分类号： G03F7/11 ,  C23C16/50 ,  G02B1/11 ,  G03F7/09 ,  H01L21/02 ,  H01L21/027 ,  C23C14/54

CPC分类号： G03F7/091

摘要： A stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.

摘要翻译： 一种用于沉积抗反射层的稳定方法。 氦气用于降低等离子体增强硅烷氧化物，硅氮氧化物和氮化硅工艺的沉积速率。 氦也用于稳定工艺，使得可以沉积不同的膜。 本发明还提供了可以控制工艺参数以产生具有变化的最佳折射率，吸收指数和厚度以获得所需光学行为的抗反射层的条件。

公开(公告)号：USD318306S

公开(公告)日：1991-07-16

申请号：US182318

申请日：1988-04-15

申请人： David Cheung

设计人： David Cheung