公开(公告)号：US20210028014A1

公开(公告)日：2021-01-28

申请号：US17037769

申请日：2020-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L21/02 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US20200161340A1

公开(公告)日：2020-05-21

申请号：US16635290

申请日：2018-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Daisuke KUROSAKI ,  Masakatsu OHNO ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L33/62 ,  G02F1/1368

Abstract: A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with atop surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer. The fifth insulating layer includes a first opening and a second opening in a region overlapping with the semiconductor layer and not overlapping with the first conductive layer. A second conductive layer and a third conductive layer are electrically connected to the semiconductor layer in the first opening and the second opening, respectively. The third to fifth insulating layers include metal, and oxygen or nitrogen. A sixth insulating layer includes a region in contact with a top surface and a side surface of the fifth insulating layer and a region in contact with the first insulating layer.

公开(公告)号：US20190245091A1

公开(公告)日：2019-08-08

申请号：US16384069

申请日：2019-04-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/49 ,  H01L21/465 ,  H01L29/417 ,  H01L21/4757 ,  H01L21/477 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/465 ,  H01L21/47573 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2227/323

Abstract: The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

公开(公告)号：US20180219102A1

公开(公告)日：2018-08-02

申请号：US15935324

申请日：2018-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

公开(公告)号：US20180182870A1

公开(公告)日：2018-06-28

申请号：US15846657

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Takahiro IGUCHI ,  Masami JINTYOU ,  Takashi HAMOCHI ,  Junichi KOEZUKA

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/385

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

公开(公告)号：US20180025913A1

公开(公告)日：2018-01-25

申请号：US15654110

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L21/28 ,  H01L23/485 ,  C23F1/38 ,  H01L27/108 ,  H01L21/285

CPC classification number: H01L21/28052 ,  C23F1/38 ,  H01L21/28229 ,  H01L21/28506 ,  H01L23/485 ,  H01L27/10814 ,  H01L27/10882 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.

公开(公告)号：US20170263776A1

公开(公告)日：2017-09-14

申请号：US15606044

申请日：2017-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

公开(公告)号：US20170243759A1

公开(公告)日：2017-08-24

申请号：US15431002

申请日：2017-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Junichi KOEZUKA ,  Takashi HAMOCHI ,  Yasuharu HOSAKA

IPC: H01L21/385 ,  H01L21/44 ,  H01L21/4757 ,  H01L21/443 ,  H01L29/66 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L21/385 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20170104018A1

公开(公告)日：2017-04-13

申请号：US15289621

申请日：2016-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takahiro SATO ,  Masami JINTYOU

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. A miniaturized transistor including an oxide semiconductor is provided. A method for manufacturing a semiconductor device including an oxide semiconductor film includes the following steps: forming an oxide semiconductor film; forming an insulating film over the oxide semiconductor film; forming a conductive film over the insulating film; forming a first protective film over the conductive film; and forming a second protective film over the first protective film. The first protective film, the conductive film, and the insulating film are processed using the second protective film as a mask. After the second protective film is removed, the conductive film and the insulating film are processed using the first protective film as a mask to have a smaller area than that of the second protective film.

公开(公告)号：US20160293641A1

公开(公告)日：2016-10-06

申请号：US15187106

申请日：2016-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/04

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.