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公开(公告)号:US20180058640A1
公开(公告)日:2018-03-01
申请号:US15803301
申请日:2017-11-03
Applicant: Soraa Laser Diode, Inc.
Inventor: Eric Goutain , James W. Raring , Paul Rudy , Hua Huang
IPC: H01S5/00 , B82Y20/00 , F21V9/16 , F21V23/06 , F21V8/00 , G02B6/26 , G02B6/27 , G02B6/42 , H01S5/40 , H01S5/343 , H01S5/323 , H01S5/22 , H01S5/024 , H01S5/022 , H01S5/028 , H01S5/042 , F21Y101/00
CPC classification number: F21K9/60 , B82Y20/00 , F21K9/62 , F21K9/64 , F21V9/30 , F21V23/06 , F21V29/713 , F21V29/83 , F21Y2101/00 , F21Y2115/10 , F21Y2115/30 , G02B6/0005 , G02B6/26 , G02B6/27 , G02B6/4214 , G02B6/4249 , H01L2224/45124 , H01L2224/48091 , H01L2924/00014 , H01S5/0021 , H01S5/005 , H01S5/0085 , H01S5/0092 , H01S5/02208 , H01S5/02224 , H01S5/02236 , H01S5/02252 , H01S5/02276 , H01S5/02284 , H01S5/02292 , H01S5/02469 , H01S5/02476 , H01S5/0287 , H01S5/0425 , H01S5/2201 , H01S5/32341 , H01S5/3235 , H01S5/34333 , H01S5/4012 , H01S5/4025 , H01S5/4031 , H01S5/4056 , H01S2301/14 , H01S2304/04
Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.
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公开(公告)号:US20170051884A1
公开(公告)日:2017-02-23
申请号:US15160873
申请日:2016-05-20
Applicant: Soraa Laser Diode, Inc.
Inventor: James W. Raring , Paul Rudy , Eric Goutain , Troy Trottier , Melvin McLaurin , James Harrison
CPC classification number: H01S5/02469 , H01L2224/48091 , H01L2224/48465 , H01L2224/49175 , H01S5/02212 , H01S5/02236 , H01S5/02438 , H01S5/22 , H01S5/32341 , H01S5/4025 , H01L2924/00014
Abstract: The embodiments described herein provide a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source.
Abstract translation: 本文描述的实施例提供了使用基于含镓和氮的材料的激光二极管激发源和基于磷光体材料的发光源的组合的集成白色电磁辐射源的装置和方法。 基于镓和氮材料的紫色,蓝色或其他波长激光二极管源可以与诸如黄色荧光体的磷光体材料紧密集成,以形成紧凑的高亮度和高效率的白色光源。
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公开(公告)号:US20190323663A1
公开(公告)日:2019-10-24
申请号:US16449126
申请日:2019-06-21
Applicant: Soraa Laser Diode, Inc.
Inventor: Paul Rudy , James W. Raring , Eric Goutain , Troy Trottier , Melvin McLaurin , James Harrison , Sten Heikman , Michael Cantore
IPC: F21K9/64 , H01S5/024 , H01S5/40 , H01S5/00 , F21K9/69 , F21K9/68 , H01S5/022 , F21K9/90 , F21V29/70 , H01S5/343
Abstract: The embodiments described herein provide a high-luminous flux laser-based white light source. A plurality of laser packages are arranged in an array pattern on a common support member. The plurality of laser packages each include one or more laser diode devices and a phosphor member. The phosphor member converts a fraction of the electromagnetic radiation from each of the laser diode devices to an emitted electromagnetic radiation and a white light is outputted.
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公开(公告)号:US10274139B1
公开(公告)日:2019-04-30
申请号:US15870586
申请日:2018-01-12
Applicant: Soraa Laser Diode, Inc.
Inventor: Eric Goutain
Abstract: A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.
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公开(公告)号:US09835296B2
公开(公告)日:2017-12-05
申请号:US15159595
申请日:2016-05-19
Applicant: Soraa Laser Diode, Inc.
Inventor: Eric Goutain , James W. Raring , Paul Rudy , Hua Huang
IPC: H01S5/00 , F21K99/00 , G02B6/27 , F21K9/60 , H01S5/022 , H01S5/024 , H01S5/22 , H01S5/343 , H01S5/40 , B82Y20/00 , G02B6/42 , F21V29/71 , F21V29/83 , F21V9/16 , F21V23/06 , F21V8/00 , H01S5/323 , F21K9/62 , F21K9/64 , G02B6/26 , H01S5/028 , H01S5/042 , F21Y115/30 , F21Y115/10 , F21Y101/00
CPC classification number: F21K9/60 , B82Y20/00 , F21K9/62 , F21K9/64 , F21V9/30 , F21V23/06 , F21V29/713 , F21V29/83 , F21Y2101/00 , F21Y2115/10 , F21Y2115/30 , G02B6/0005 , G02B6/26 , G02B6/27 , G02B6/4214 , G02B6/4249 , H01L2224/45124 , H01L2224/48091 , H01L2924/00014 , H01S5/0021 , H01S5/005 , H01S5/0085 , H01S5/0092 , H01S5/02208 , H01S5/02224 , H01S5/02236 , H01S5/02252 , H01S5/02276 , H01S5/02284 , H01S5/02292 , H01S5/02469 , H01S5/02476 , H01S5/0287 , H01S5/0425 , H01S5/2201 , H01S5/32341 , H01S5/3235 , H01S5/34333 , H01S5/4012 , H01S5/4025 , H01S5/4031 , H01S5/4056 , H01S2301/14 , H01S2304/04
Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.
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公开(公告)号:US20170063047A1
公开(公告)日:2017-03-02
申请号:US15351326
申请日:2016-11-14
Applicant: Soraa Laser Diode, Inc.
Inventor: Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
CPC classification number: H01S5/4087 , H01S5/005 , H01S5/0202 , H01S5/0203 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/0218 , H01S5/0425 , H01S5/22 , H01S5/34333 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S5/4093
Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
Abstract translation: 多发射体激光二极管器件包括从载体晶片分离的载体芯片。 载体芯片具有长度和宽度,宽度限定第一间距。 该器件还包括从衬底转移到载体芯片并在键合区附接到载体芯片的多个外延台面区域。 每个外延台面区域以基本上平行的构造布置在载体芯片上,并且以限定相邻外延台面区域之间的距离的第二间距定位。 多个外延台面区域中的每一个包括外延材料,其包括n型包层区域,具有至少一个有源层区域的有源区域和p型包层区域。 该器件还包括一个或多个激光二极管条纹区域,每个区域具有形成空腔区域的一对小面。
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37.
公开(公告)号:US20170051883A1
公开(公告)日:2017-02-23
申请号:US14829927
申请日:2015-08-19
Applicant: Soraa Laser Diode, Inc.
Inventor: James W. Raring , Paul Rudy , Eric Goutain
CPC classification number: H01S5/32 , F21V29/70 , F21Y2115/30 , H01L2224/48091 , H01L2224/48465 , H01L2224/49175 , H01S5/005 , H01S5/0216 , H01S5/0217 , H01S5/02248 , H01S5/02296 , H01S5/2201 , H01S5/3203 , H01S5/34333 , H01L2924/00014
Abstract: The present invention provides a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source.
Abstract translation: 本发明提供一种使用基于含镓和氮的材料的激光二极管激发源和基于磷光体材料的发光源的组合的集成白色电磁辐射源的装置和方法。 在本发明中,基于镓和氮材料的紫色,蓝色或其他波长激光二极管源与诸如黄色磷光体的荧光体材料紧密结合,以形成紧凑的高亮度和高效率的白色光源。
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公开(公告)号:US09520697B2
公开(公告)日:2016-12-13
申请号:US14600506
申请日:2015-01-20
Applicant: Soraa Laser Diode, Inc.
Inventor: Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
CPC classification number: H01S5/4087 , H01S5/005 , H01S5/0202 , H01S5/0203 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/0218 , H01S5/0425 , H01S5/22 , H01S5/34333 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S5/4093
Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
Abstract translation: 一种用于制造多发射体激光二极管器件的方法,包括提供具有表面区域并形成覆盖在表面区域上的外延材料的衬底,所述外延材料包括n型覆层区域,活性区域包括至少一层有源层, n型包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子,每个骰子对应于至少一个激光装置,其特征在于一对骰子之间的第一间距,第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片,使得每对骰子在每对骰子之间配置有第二间距,第二间距大于第一间距。
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公开(公告)号:US20160294162A1
公开(公告)日:2016-10-06
申请号:US15176076
申请日:2016-06-07
Applicant: Soraa Laser Diode, Inc.
Inventor: Melvin McLaurin , Alexander Sztein , Po Shan Hsu , Eric Goutain , Dan Steigerwald , James W. Raring
CPC classification number: H01S5/4093 , H01L24/83 , H01L24/95 , H01L2224/16225 , H01L2224/48091 , H01L2224/48465 , H01L2924/16152 , H01S5/0203 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/22 , H01S5/3013 , H01S5/32325 , H01S5/32341 , H01L2924/00014 , H01L2924/00
Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
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公开(公告)号:US09379525B2
公开(公告)日:2016-06-28
申请号:US14312427
申请日:2014-06-23
Applicant: Soraa Laser Diode, Inc.
Inventor: Melvin McLaurin , Alexander Sztein , Po Shan Hsu , Eric Goutain , Dan Steigerwald , James W. Raring
CPC classification number: H01S5/4093 , H01L24/83 , H01L24/95 , H01L2224/16225 , H01L2224/48091 , H01L2224/48465 , H01L2924/16152 , H01S5/0203 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/22 , H01S5/3013 , H01S5/32325 , H01S5/32341 , H01L2924/00014 , H01L2924/00
Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底,所述外延材料包括n型覆层区域,所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子,每个骰子对应于至少一个激光装置,其特征在于一对骰子之间的第一间距,第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片,使得每对骰子在每对骰子之间配置有第二间距,第二间距大于第一间距。
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