公开(公告)号：US20150140209A1

公开(公告)日：2015-05-21

申请号：US14548893

申请日：2014-11-20

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Yuichiro Inatomi ,  Kazutoshi Iwai ,  Mitsuaki Iwashita

IPC: B05D1/36 ,  C23C28/00

CPC classification number: C23C28/34 ,  C23C18/02 ,  C23C18/04 ,  C23C18/06 ,  C23C18/1275 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1851 ,  C23C18/1865 ,  C23C18/1868 ,  C23C18/1893 ,  C23C18/32 ,  C23C18/38 ,  C23C28/00 ,  C23C28/021 ,  C23C28/321 ,  H01L21/288 ,  H01L21/76874 ,  H01L21/76898

Abstract: A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.

Abstract translation: 电镀的预处理方法即使在凹部具有高纵横比的情况下，也可以在凹部的内表面和凹部的外侧的基板的表面上形成具有充分粘合性的镀层。 电镀预处理方法包括制备具有凹部的基板的制备方法; 通过使用第一偶联剂，至少在基板的凹部的内表面上形成第一耦合层21a的第一耦合层形成工艺; 以及第二耦合层形成工艺，其在第一耦合层形成工艺之后通过使用第二偶联剂在至少在凹部的外部的基板的表面上形成第二耦合层21b。

公开(公告)号：US20240213090A1

公开(公告)日：2024-06-27

申请号：US18557144

申请日：2022-04-13

Applicant: Tokyo Electron Limited

Inventor： Keiichi Fujita ,  Takashi Tanaka

IPC: H01L21/768 ,  C23C18/16 ,  H01L21/288

CPC classification number: H01L21/76874 ,  C23C18/1658 ,  C23C18/166 ,  H01L21/288

Abstract: A substrate liquid processing method includes preparing a substrate having a recess on a surface thereof, a seed layer being formed on a surface of the recess; bringing a first pretreatment liquid, containing a reducing agent, a pH adjuster, and an additive configured to accelerate or inhibit an electroless plating reaction, into contact with the seed layer; and precipitating, after the bringing of the first pretreatment liquid into contact with the seed layer, a plating metal in the recess by supplying a first electroless plating liquid to the recess.

公开(公告)号：US11028483B2

公开(公告)日：2021-06-08

申请号：US16344932

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/16 ,  C23C18/34 ,  H01L21/3065 ,  H01L21/033 ,  H01L21/3205

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.

公开(公告)号：US20190256980A1

公开(公告)日：2019-08-22

申请号：US16344932

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/34 ,  H01L21/3065 ,  C23C18/16

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.

公开(公告)号：US10179950B2

公开(公告)日：2019-01-15

申请号：US15184215

申请日：2016-06-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani

IPC: C23C18/50 ,  C23C18/38 ,  C23C18/16 ,  C23C18/32 ,  H01L21/768 ,  H01L21/288 ,  C23C18/18

Abstract: Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.

公开(公告)号：US20170287713A1

公开(公告)日：2017-10-05

申请号：US15473810

申请日：2017-03-30

Applicant: Tokyo Electron Limited

Inventor： Mitsuaki Iwashita ,  Takeshi Nagao ,  Nobutaka Mizutani ,  Takashi Tanaka ,  Koichi Yatsuda ,  Kazutoshi Iwai ,  Yuichiro Inatomi

IPC: H01L21/033 ,  C23C14/04 ,  C23C16/04 ,  H01L21/308 ,  C23C18/16

CPC classification number: H01L21/0332 ,  C23C14/042 ,  C23C16/042 ,  C23C18/1603 ,  C23C18/1605 ,  C23C18/1619 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/1639 ,  C23C18/1642 ,  C23C18/1675 ,  C23C18/1893 ,  C23C18/32 ,  C23C18/50 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

公开(公告)号：US09653354B2

公开(公告)日：2017-05-16

申请号：US15029655

申请日：2014-10-14

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Nobutaka Mizutani ,  Mitsuaki Iwashita

IPC: H01L21/4763 ,  H01L21/768 ,  C23C18/32 ,  H01L21/288 ,  H01L23/532 ,  C23C18/18 ,  C23C18/16 ,  C23C18/31

CPC classification number: H01L21/76879 ,  C23C18/1633 ,  C23C18/1844 ,  C23C18/31 ,  C23C18/32 ,  H01L21/288 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76874 ,  H01L23/53257 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring layer can be formed within a recess of a substrate while suppressing the metal wiring layer from being formed at the outside of the recess. A metal wiring layer forming method includes forming a catalyst layer 5 formed of Pd on a tungsten layer W on a bottom surface 3a of the recess 3 of the substrate 2 without forming the catalyst layer 5 on a surface 3b of an insulating layer of the recess 3; and forming a Ni-based metal wiring layer 7 on the catalyst layer 5 of the recess 3.

公开(公告)号：US20160053378A1

公开(公告)日：2016-02-25

申请号：US14829740

申请日：2015-08-19

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/16 ,  H01L21/288

CPC classification number: H01L21/288 ,  B05D1/005 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76898

Abstract: A Plating method includes a first plating process S21 of supplying a first plating liquid to a substrate 2 having a recess 12 and forming a first plating layer 13; and a second plating process of supplying a second plating liquid to the substrate 2 and forming a second plating layer 14 on the first plating layer 13 after the first plating process S21. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process S21 includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate 2 by rotating the substrate 2 at a first speed and a process of rotating the substrate 2 at a second speed and at a third speed repeatedly.

Abstract translation: 电镀方法包括：向具有凹部12的基板2供给第一电镀液体并形成第一镀层13的第一电镀工序S21; 以及在第一电镀工序S21之后，向基板2供给第二镀液并在第一镀层13上形成第二镀层14的第二电镀工序。 这里，包含在第一电镀液中的添加剂的浓度与第二电镀液中的不同。 第一电镀工艺S21包括通过以第一速度旋转衬底2和以第二速度旋转衬底2的过程，在衬底2上形成不连续膜的第一镀层或颗粒形状的工艺， 第三速反复。

公开(公告)号：US20150218702A1

公开(公告)日：2015-08-06

申请号：US14609848

申请日：2015-01-30

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC: C23C18/16 ,  C23C18/48 ,  C23C18/32

CPC classification number: C23C18/1608 ,  C23C18/1619 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1831 ,  C23C18/32 ,  C23C18/54

Abstract: A multiple number of accurately-patterned metal layers can be formed on a substrate. On a substrate 11, a patterned first metal layer 12 is formed (see FIG. 1A), and then, a metal sacrificial layer 15 is formed on the first metal layer 12 (see FIG. 1B). Further, an aqueous solution containing an ionized metal allowed to be substituted with a metal of the metal sacrificial layer 15 is coated on the metal sacrificial layer 15, so that a catalyst layer 16 is formed on the metal sacrificial layer 15 (see FIG. 1E) . Thereafter, a second metal layer 18 is formed on the catalyst layer 16 by performing an electroless plating process (see FIG. 1F). Furthermore, the substrate 11 is etched by using the second metal layer 18 as a mask.

Abstract translation: 可以在基板上形成多个精确图案化的金属层。 在基板11上形成图案化的第一金属层12（参照图1A），然后在第一金属层12（参照图1B）上形成金属牺牲层15。 此外，在金属牺牲层15上涂布含有允许被金属牺牲层15的金属取代的电离金属的水溶液，从而在金属牺牲层15上形成催化剂层16（参见图1E ）。 此后，通过进行无电镀处理（参照图1F），在催化剂层16上形成第二金属层18。 此外，通过使用第二金属层18作为掩模来蚀刻基板11。

公开(公告)号：US20150167174A1

公开(公告)日：2015-06-18

申请号：US14404174

申请日：2013-05-27

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC: C23C18/18 ,  C23C18/16

CPC classification number: C23C18/1875 ,  C23C18/1616 ,  C23C18/1619 ,  C23C18/1676 ,  C23C18/168 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76898

Abstract: A plating method can improve uniformity in thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. In the plating process, after supplying the plating liquid to the substrate and filling the plating liquid into the recess, a plating liquid having a higher temperature than a temperature of the plating liquid is supplied to the substrate.

Abstract translation: 电镀方法可以提高形成在凹部的内表面上的镀层的厚度的均匀性。 电镀方法包括将形成有凹部的基板装载到壳体中的装载工序; 以及向所述基板供给电镀液体并在所述凹部的内表面形成具有特定功能的镀层的电镀工序。 在电镀工序中，在将电镀液供给到基板并将电镀液填充到凹部中之后，将具有比电镀液的温度更高的温度的电镀液供给到基板。