公开(公告)号：US08531438B2

公开(公告)日：2013-09-10

申请号：US10580488

申请日：2004-11-05

申请人： Takumi Arie ,  Hideyuki Uemura ,  Shinichi Hasegawa ,  Hiroshi Amano

发明人： Takumi Arie ,  Hideyuki Uemura ,  Shinichi Hasegawa ,  Hiroshi Amano

IPC分类号： G06F3/038

CPC分类号： G09G5/00 ,  G01C21/367 ,  G01C21/3673 ,  G09G2320/0626 ,  G09G2340/14

摘要： An information providing apparatus allowing appropriate confirmation of contents of information which assists travel of a mobile object, presented by an image display section, even when the image display section providing information which assists travel of the mobile object as an image display is placed under a condition producing vibration not smaller than a predetermined level. The equipment has an image display section (22) mounted in a vehicle and allowing image display of information which assists travel of the vehicle, a vibration sensor (44) detecting vibration not smaller than a predetermined level produced on the image display section (22) and sending a detection output signal, and an operation control section (30) modifying a display mode of information presented as an image display by the image display section (22), into the one having contents of the information are more readily recognizable, when the detection output signal from the vibration sensor (44) expresses that the image display section (22) is in a vibration-sustained state in which vibration not smaller than a predetermined level is sustained over a duration of time not shorter than a predetermined duration.

摘要翻译： 即使当提供帮助移动对象的旅行作为图像显示的信息的图像显示部分被放置在条件下时，允许适当地确认有助于由图像显示部分呈现的移动对象的旅行的信息的内容 产生不小于预定水平的振动。 该设备具有安装在车辆中的图像显示部分（22），并允许帮助车辆行进的信息的图像显示;检测不小于在图像显示部分（22）上产生的预定水平的振动的振动传感器（44） 并且发送检测输出信号，并且当将图像显示部分（22）中呈现为图像显示的信息的显示模式修改为具有信息内容的信息的显示模式的操作控制部分（30）更易于识别，当 来自振动传感器（44）的检测输出信号表示图像显示部（22）处于不小于预定水平的振动持续不长于预定持续时间的持续时间的振动持续状态。

公开(公告)号：US20130044816A1

公开(公告)日：2013-02-21

申请号：US13638629

申请日：2011-12-20

申请人： Hiroshi Amano ,  Takeshi Tanaka

发明人： Hiroshi Amano ,  Takeshi Tanaka

IPC分类号： H04N7/32

CPC分类号： H04N19/182 ,  H04N19/433

摘要： A motion compensation apparatus performs motion compensation on a current block having a non-rectangular shape, using a reference image stored in a frame memory and includes: a reference block memory for storing part of the reference image; a frame-memory-transfer control unit which identifies, in the reference image, a pixel block having a rectangular shape and including a reference block having a non-rectangular shape and used for motion compensation, and transfers pixel data of the identified pixel block from the frame memory to the reference block memory; and a motion compensation processing unit which generates a prediction block of the current block, using the reference block included in the pixel block stored in the reference block memory.

摘要翻译： 运动补偿装置使用存储在帧存储器中的参考图像对具有非矩形形状的当前块执行运动补偿，并且包括：参考块存储器，用于存储参考图像的一部分; 在参考图像中识别具有矩形形状并且包括具有非矩形形状并用于运动补偿的参考块的像素块的帧存储器传送控制单元，并将所识别的像素块的像素数据从 帧存储器到参考块存储器; 以及运动补偿处理单元，其使用包含在存储在参考块存储器中的像素块中的参考块来生成当前块的预测块。

公开(公告)号：US20120258286A1

公开(公告)日：2012-10-11

申请号：US13517970

申请日：2009-12-25

申请人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

发明人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

IPC分类号： C30B25/18 ,  C30B29/40

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  Y10T428/24529

摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

公开(公告)号：US20120211801A1

公开(公告)日：2012-08-23

申请号：US13392998

申请日：2010-08-23

申请人： Shin Hashimoto ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

发明人： Shin Hashimoto ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

IPC分类号： H01L29/778 ,  H01L29/205

CPC分类号： H01L29/7785 ,  H01L29/2003

摘要： There is provided a normally-off group III nitride semiconductor device having a high breakdown field strength and minimal crystal defects, and a group III nitride laminated semiconductor wafer used to make the group III nitride semiconductor device. The group III nitride laminated semiconductor wafer 10 includes a substrate 27 which is made of AlN and has a main surface 27a along the c-axis of the AlN crystal, a first AlX1InY1Ga1-X1-Y1N layer 13 which is made of a group III nitride-based semiconductor containing Al and is provided on the main surface 27a, and a second AlX2InY2Ga1-X2-Y2N layer 15 which is provided on the main surface 27a, is made of a group III nitride-based semiconductor having a larger bandgap than the first AlX1InY1Ga1-X1-Y1N layer 13, and forms a heterojunction with the first AlX1InY1Ga1-X1-Y1N layer 13.

摘要翻译： 提供了具有高击穿场强度和最小晶体缺陷的常规III族氮化物半导体器件，以及用于制造III族氮化物半导体器件的III族氮化物层压半导体晶片。 III族氮化物层叠半导体晶片10包括由AlN制成并具有沿AlN晶体的c轴的主表面27a的基板27，由III族氮化物制成的第一AlX1InY1Ga1-X1-Y1N层13 包含Al并且设置在主表面27a上，并且设置在主表面27a上的第二AlX2InY2Ga1-X2-Y2N层15由具有比第一个更大的带隙的III族氮化物基半导体制成 AlX1InY1Ga1-X1-Y1N层13，与第一AlX1InY1Ga1-X1-Y1N层13形成异质结。

公开(公告)号：US20120161205A1

公开(公告)日：2012-06-28

申请号：US13409798

申请日：2012-03-01

申请人： Shin HASHIMOTO ,  Tatsuya Tanabe ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

发明人： Shin HASHIMOTO ,  Tatsuya Tanabe ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

IPC分类号： H01L29/205

CPC分类号： H01L29/7787 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/872

摘要： A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0

摘要翻译： 提供III族氮化物半导体器件和III族氮化物半导体晶片。 III族氮化物半导体器件具有包含含有Al的III族氮化物基半导体的沟道层。 III族氮化物半导体器件可以增强二维电子气的迁移率并改善电流特性。 III族氮化物半导体晶片用于制造III族氮化物半导体器件。 III族氮化物半导体晶片包括由Al x Ga 1-x N（0

公开(公告)号：US20100327228A1

公开(公告)日：2010-12-30

申请号：US12866147

申请日：2009-01-28

申请人： Akira Bando ,  Hiroshi Amano

发明人： Akira Bando ,  Hiroshi Amano

IPC分类号： C09K11/64 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L31/03048 ,  H01L31/1844 ,  H01L33/0075 ,  H01S5/32341 ,  H01S2304/12 ,  Y02E10/544 ,  Y02P70/521

摘要： There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of AlxGa1-xN (0≦x≦1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).

摘要翻译： 提供一种III族氮化物半导体外延基板，其具有抑制的垂直方向上的穿透位错水平和优异的晶体质量，该III族氮化物半导体外延基板包括用于生长外延膜的基板（1） 以及形成在所述基板（1）的顶部上或形成在所述基板的顶部上的III族氮化物层（2）的顶部上的Al x Ga 1-x N（0＆lt; 1lE; x＆lt; 1l; 1）的组成的ELO层（4） 1），其中所述ELO层（4）是通过使用由碳构成的掩模图案（3）形成的层，并且形成在所述基板（1）的顶部上或者形成在所述III族氮化物层（ 2）。

公开(公告)号：US07774114B2

公开(公告)日：2010-08-10

申请号：US12349969

申请日：2009-01-07

申请人： Hiroshi Amano ,  Takao Takahashi ,  Eiji Yamamoto ,  Hideyuki Uemura ,  Kenji Nagashima ,  Takumi Arie

发明人： Hiroshi Amano ,  Takao Takahashi ,  Eiji Yamamoto ,  Hideyuki Uemura ,  Kenji Nagashima ,  Takumi Arie

IPC分类号： G05D1/00

CPC分类号： B60K37/06 ,  B60K2350/901 ,  B60K2350/903

摘要： Front-mounted in-vehicle equipment arranged to a front part of a vehicle internal space, rear-mounted in-vehicle equipment arranged to a rear part of the vehicle internal space, and a connection adapted to connect the front-mounted in-vehicle equipment and the rear-mounted in-vehicle equipment is described. Rear-mounted in-vehicle equipment controls the front-mounted in-vehicle equipment via a keyboard or game controller, thereby allowing a passenger to control the front-mounted in-vehicle equipment in a straightforward manner from the rear-mounted in-vehicle equipment instead of the driver operating the front-mounted in-vehicle equipment. The rear-mounted in-vehicle equipment can be denied access to overwriting information related to music data in the front-mounted in-vehicle equipment.

摘要翻译： 布置在车辆内部空间的前部的前置车载设备，布置在车辆内部空间的后部的后置车载设备，以及连接适于连接前置车载设备 并且描述了后置车载设备。 后置车载设备通过键盘或游戏控制器控制前置车载设备，从而允许乘客以直接的方式从后方车载设备控制前置车载设备 而不是驾驶员操作前置车载设备。 后方车载设备可以被拒绝访问与前置车载设备中的音乐数据相关的信息。

公开(公告)号：US20090110077A1

公开(公告)日：2009-04-30

申请号：US12301630

申请日：2007-05-23

申请人： Hiroshi Amano ,  Takeshi Tanaka ,  Masaki Maeda ,  Kenjiro Tsuda ,  Masayasu Iguchi ,  Youji Shibahara

发明人： Hiroshi Amano ,  Takeshi Tanaka ,  Masaki Maeda ,  Kenjiro Tsuda ,  Masayasu Iguchi ,  Youji Shibahara

IPC分类号： H04N7/32 ,  H04N7/26

CPC分类号： H04N19/139 ,  H04N19/105 ,  H04N19/109 ,  H04N19/137 ,  H04N19/176 ,  H04N19/43 ,  H04N19/436 ,  H04N19/51 ,  H04N19/52 ,  H04N19/61

摘要： When compression encoding processing of an image is performed in units of macroblocks using pipeline structure, application of the skip mode or the like according to MPEG4AVC to compression encode an encoding target block requires motion vectors and the like of adjacent blocks of the encoding target block. However, depending on the structure of the pipeline stages, the motion vectors and the like may not be determined. In such cases, the skip mode cannot be applied to compression encode the encoding target block. The present invention aims to solve this problem and (i) calculates all motion information candidates, of the encoding target block, corresponding to all motion information selectable by a previous block of the encoding target block, and (ii) selects, as the motion information of the encoding target block in the skip mode, the motion information corresponding to the motion information determined for the previous block.

摘要翻译： 当使用流水线结构以宏块为单位执行图像的压缩编码处理时，根据MPEG4AVC的跳过模式等的应用对编码对象块进行压缩编码需要编码对象块的相邻块的运动矢量等。 然而，根据流水线级的结构，可能不能确定运动矢量等。 在这种情况下，跳过模式不能应用于编码目标块的压缩编码。 本发明旨在解决这个问题，（i）计算编码目标块的所有运动信息候选，对应于由编码目标块的先前块选择的所有运动信息，以及（ii）选择运动信息 在所述跳过模式中的所述编码对象块的所述运动信息对应于针对所述前一块确定的运动信息。

公开(公告)号：US20080277670A1

公开(公告)日：2008-11-13

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L33/00

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

公开(公告)号：US07297989B2

公开(公告)日：2007-11-20

申请号：US10525753

申请日：2003-08-21

申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

IPC分类号： H01L33/00

CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。