公开(公告)号：US20100001704A1

公开(公告)日：2010-01-07

申请号：US12168602

申请日：2008-07-07

申请人： Richard K. Williams

发明人： Richard K. Williams

IPC分类号： G05F1/62

CPC分类号： H02M3/158 ,  H02M3/157

摘要： A step-down switching voltage regulator includes M high-side switches connected between an input voltage and a node; N synchronous rectifiers connected between the node Vx and a ground voltage and an inductor connected between an input voltage and a node Vx and an inductor connected between the node Vx and an output node. An interface circuit decodes a control signal to identify: 1) a subset (m) of the high-side switches, 2) a subset (n) of the synchronous rectifiers. A control circuit drives the high-side switches and synchronous rectifiers in a repeating sequence that includes an inductor charging phase where the high-side switches in the subset m are activated to connect the node Vx to the input voltage; and an inductor discharging phase where the synchronous rectifiers in the subset n are activated to connect the node Vx to the ground voltage.

摘要翻译： 降压开关电压调节器包括连接在输入电压和节点之间的M个高侧开关; 连接在节点Vx和接地电压之间的N个同步整流器和连接在输入电压和节点Vx之间的电感器以及连接在节点Vx和输出节点之间的电感器。 接口电路解码控制信号以识别：1）高侧开关的子集（m），2）同步整流器的子集（n）。 控制电路以重复序列驱动高侧开关和同步整流器，该重复序列包括电感器充电阶段，其中子集m中的高侧开关被激活以将节点Vx连接到输入电压; 以及电感放电阶段，其中子集n中的同步整流器被激活以将节点Vx连接到接地电压。

公开(公告)号：US07573105B2

公开(公告)日：2009-08-11

申请号：US11978901

申请日：2007-10-30

申请人： Richard K. Williams ,  Michael E. Cornell ,  Wai Tien Chen

发明人： Richard K. Williams ,  Michael E. Cornell ,  Wai Tien Chen

IPC分类号： H01L27/092

CPC分类号： H01L29/7816 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/74 ,  H01L21/743 ,  H01L21/76216 ,  H01L21/76218 ,  H01L21/82285 ,  H01L21/823481 ,  H01L21/823493 ,  H01L21/823878 ,  H01L21/823892 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/66272 ,  H01L29/7322 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7835

摘要： A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

公开(公告)号：US20090039947A1

公开(公告)日：2009-02-12

申请号：US11835760

申请日：2007-08-08

申请人： Richard K. Williams

发明人： Richard K. Williams

IPC分类号： G05F3/08

CPC分类号： H02M3/07 ,  G05F3/16 ,  H02M3/337 ,  H02M2001/009

摘要： A multiple output DC-to-DC voltage converter using a new time-multiplexed-capacitor converter algorithm and related circuit topologies is herein disclosed. One embodiment of this invention includes a flying capacitor, a first output node, a second output node, and a switching network. The switching network configured to provide the following modes of circuit operation: 1) a first mode where the positive electrode of the flying capacitor is connected to an input voltage and the negative electrode of the flying capacitor is connected to ground; 2) a second mode where the negative electrode of the flying capacitor is connected to the input voltage and the positive electrode of the flying capacitor is connected to the first output node; and 3) a third mode where the positive electrode of the flying capacitor is connected to ground and the negative electrode of the flying capacitor is connected to the second output node.

摘要翻译： 本文公开了使用新的时间复用电容转换器算法和相关电路拓扑的多输出DC-DC电压转换器。 本发明的一个实施例包括飞行电容器，第一输出节点，第二输出节点和交换网络。 配置为提供以下电路操作模式的开关网络：1）将飞跨电容器的正电极连接到输入电压并且飞跨电容器的负电极连接到地的第一模式; 2）第二模式，其中飞跨电容器的负电极连接到输入电压，并且飞跨电容器的正电极连接到第一输出节点; 以及3）第三模式，其中飞跨电容器的正电极连接到地，并且飞跨电容器的负电极连接到第二输出节点。

公开(公告)号：US20090039869A1

公开(公告)日：2009-02-12

申请号：US11890948

申请日：2007-08-08

申请人： Richard K. Williams

发明人： Richard K. Williams

IPC分类号： G01R19/00

CPC分类号： G01R19/0092 ,  G01R1/203 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/25 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/088 ,  H01L29/1087 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05558 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48599 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73207 ,  H01L2224/73257 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M2001/0009 ,  H03K17/0822 ,  H03K17/18 ,  H03K2217/0027 ,  H01L2924/00 ,  H01L2924/00012

摘要： A cascode current sensor includes a main MOSFET and a sense MOSFET. The drain terminal of the main MOSFET is connected to a power device whose current is to be monitored, and the source and gate terminals of the main MOSFET are connected to the source and gate terminals, respectively, of the sense MOSFET. The drain voltages of the main and sense MOSFETs are equalized, in one embodiment by using a variable current source and negative feedback. The gate width of the main MOSFET is typically larger than the gate width of the sense MOSFET. Using the size ratio of the gate widths, the current in the main MOSFET is measured by sensing the magnitude of the current in the sense MOSFET. Inserting the relatively large MOSFET in the power circuit minimizes power loss.

摘要翻译： 共源共栅电流传感器包括主MOSFET和感测MOSFET。 主MOSFET的漏极端子连接到要监视其电流的功率器件，并且主MOSFET的源极和栅极端子分别连接到感测MOSFET的源极和栅极端子。 在一个实施例中，通过使用可变电流源和负反馈来使主感测MOSFET和感测MOSFET的漏极电压相等。 主MOSFET的栅极宽度通常大于读出MOSFET的栅极宽度。 使用栅极宽度的尺寸比，通过感测MOSFET中电流的大小来测量主MOSFET中的电流。 在电源电路中插入相对较大的MOSFET可以最大限度地减少功耗。

公开(公告)号：US20080217699A1

公开(公告)日：2008-09-11

申请号：US12069940

申请日：2008-02-14

申请人： Donald R. Disney ,  Richard K. Williams

发明人： Donald R. Disney ,  Richard K. Williams

IPC分类号： H01L49/00

CPC分类号： H01L21/76243 ,  H01L21/761 ,  H01L21/76267 ,  H01L21/763 ,  H01L21/8222 ,  H01L21/82285 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0825 ,  H01L27/0826 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/732

摘要： An isolated bipolar transistor formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region and the filled trench form an isolated pocket of the substrate which contains the bipolar transistor. The collector of the bipolar transistor may comprise the floor isolation region. The substrate does not contain an epitaxial layer, thereby overcoming the many problems associated with fabricating the same.

摘要翻译： 形成在P型半导体衬底中的隔离双极型晶体管包括N型浸没式隔离区和从衬底表面向底部隔离区向下延伸的填充沟槽。 底部隔离区域和填充的沟槽一起形成包含双极晶体管的衬底的隔离袋。 双极晶体管的集电极可以包括地板隔离区域。 衬底不含有外延层，从而克服了与其制造相关的许多问题。

公开(公告)号：US07422938B2

公开(公告)日：2008-09-09

申请号：US10918316

申请日：2004-08-14

申请人： Richard K. Williams ,  Michael E. Cornell ,  Wai Tien Chan

发明人： Richard K. Williams ,  Michael E. Cornell ,  Wai Tien Chan

IPC分类号： H01L21/8234

CPC分类号： H01L21/26513 ,  H01L21/743 ,  H01L21/761 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0629 ,  H01L27/0928 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66136 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7816 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

摘要： An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.

公开(公告)号：US20080197908A1

公开(公告)日：2008-08-21

申请号：US12032672

申请日：2008-02-16

申请人： Richard K. Williams

发明人： Richard K. Williams

IPC分类号： H03K17/687

CPC分类号： H02M3/155 ,  H01L29/8128

摘要： A cascode power switch for use in a MESFET based switching regulator includes a MOSFET in series with a normally-off MESFET. The cascode power switch is typically connected in between a power source and a node Vx. The node Vx is connected to an output node via an inductor and to ground via a Schottky diode or a second MESFET or both. A control circuit drives the MESFET (and the second MESFET) so that the inductor is alternately connected to the battery and to ground. The MOSFET is switched off during sleep or standby modes to minimize leakage current through the MESFET. The MOSFET is therefore switched at a low frequency compared to the MESFET and does not contribute significantly to switching losses in the converter.

摘要翻译： 用于基于MESFET的开关稳压器的共源共栅电源开关包括与常闭MESFET串联的MOSFET。 共源共栅电源开关通常连接在电源和节点Vx之间。 节点Vx通过电感器连接到输出节点，并通过肖特基二极管或第二MESFET或两者接地。 控制电路驱动MESFET（和第二MESFET），使得电感器交替地连接到电池和接地。 在睡眠或待机模式期间，MOSFET关闭，以最大限度地减少通过MESFET的漏电流。 因此，与MESFET相比，MOSFET以低频率切换，并且对转换器中的开关损耗没有显着影响。

公开(公告)号：US20080197408A1

公开(公告)日：2008-08-21

申请号：US12072619

申请日：2008-02-27

申请人： Donald R. Disney ,  Richard K. Williams

发明人： Donald R. Disney ,  Richard K. Williams

IPC分类号： H01L29/06

CPC分类号： H01L29/7809 ,  H01L21/26586 ,  H01L29/0615 ,  H01L29/0626 ,  H01L29/063 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/41766 ,  H01L29/7811 ,  H01L29/7835 ,  H01L29/808 ,  H01L29/8613 ,  H01L29/866

摘要： Various integrated circuit devices, in particular a quasi-vertical DMOS transistor, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.

摘要翻译： 在隔离结构内形成有各种集成电路器件，特别是准垂直DMOS晶体管，该隔离结构包括底板隔离区域和从衬底表面延伸到地板隔离区域的沟槽。 沟槽可以填充有介电材料，或者可以在中间部分具有导电材料，其中介电层衬在沟槽的壁上。 描述了通过使用保护环将基底隔离区域延伸超过沟槽并形成漂移区域来终止隔离结构的各种技术。

公开(公告)号：US20080158915A1

公开(公告)日：2008-07-03

申请号：US11890818

申请日：2007-08-08

申请人： Richard K. Williams

发明人： Richard K. Williams

IPC分类号： H02M3/335

CPC分类号： H02M3/07 ,  H02M3/1588 ,  H02M2001/007 ,  Y02B70/1466

摘要： A DC/DC converter includes a pre-regulator stage, which may include a Buck converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of the pre-regulator stage or the post-converter stage. The pre-regulator steps the input DC voltage down by a variable amount depending on the duty factor, and the post-converter steps the voltage at the output of the pre-regulator up or down by an positive or negative integral or fractional value. The converter overcomes the problems of noise glitches, poor regulation, and instability, even near unity input-to-output voltage conversion ratios.

摘要翻译： DC / DC转换器包括预调节器级，其可以包括降压转换器和后转换器级，其可以包括电荷泵。 预调节器级的占空因数由从预调节器级或后转换器级的输出端延伸的反馈路径控制。 预调节器根据占空比将输入DC电压降低可变量，后变换器将预调节器输出端的电压上升或下降一个正或负的积分或分数值。 该转换器克服了噪声毛刺的问题，调节不良和不稳定性，甚至接近一致的输入/输出电压转换比。

公开(公告)号：US20080157733A1

公开(公告)日：2008-07-03

申请号：US11890956

申请日：2007-08-08

申请人： Richard K. Williams

发明人： Richard K. Williams

IPC分类号： G05F1/00 ,  H02M3/335

CPC分类号： H02M3/07 ,  H02M3/1588 ,  H02M2001/007 ,  Y02B70/1466

摘要： A DC/DC converter includes a pre-regulator stage, which may include a boost converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of the pre-regulator stage or the post-converter stage. The pre-regulator steps the input DC voltage up by a variable amount depending on the duty factor, and the post-converter steps the voltage at the output of the pre-regulator up or down by an positive or negative integral or fractional value. The converter overcomes the problems of noise glitches, poor regulation, and instability, even near unity input-to-output voltage conversion ratios.

摘要翻译： DC / DC转换器包括预调节器级，其可以包括升压转换器和后转换器级，其可以包括电荷泵。 预调节器级的占空因数由从预调节器级或后转换器级的输出端延伸的反馈路径控制。 预调节器根据占空因数将输入直流电压向上移动一个可变量，后变换器将预调节器输出端的电压上升或下降一个正或负的积分或分数值。 该转换器克服了噪声毛刺的问题，调节不良和不稳定性，甚至接近一致的输入/输出电压转换比。