公开(公告)号：US08933634B2

公开(公告)日：2015-01-13

申请号：US13347621

申请日：2012-01-10

Applicant: Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown ,  George A. Hariman

Inventor： Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown ,  George A. Hariman

IPC: H05B37/00 ,  H05B33/08

CPC classification number: H05B33/0827 ,  H05B33/0884

Abstract: A distributed system for driving strings of series-connected LEDs for backlighting, display and lighting applications includes multiple intelligent satellite LED driver ICs connected to a an interface IC via serial bus. The interface IC translates information obtained from a host microcontroller into instructions for the satellite LED driver ICs pertaining to such parameters as duty factor, current levels, phase delay and fault settings. Fault conditions in the LED driver ICs can be transmitted back to the interface IC. An analog current sense feedback system which also links the LED driver ICs determines the supply voltage for the LED strings.

Abstract translation: 用于驱动用于背光，显示和照明应用的串联LED串的分布式系统包括通过串行总线连接到接口IC的多个智能卫星LED驱动器IC。 接口IC将从主机微控制器获得的信息转换成与占空比，当前电平，相位延迟和故障设置等参数有关的卫星LED驱动器IC的指令。 LED驱动器IC中的故障条件可以传回回接口IC。 也连接LED驱动器IC的模拟电流感测反馈系统确定LED串的电源电压。

公开(公告)号：US08749222B2

公开(公告)日：2014-06-10

申请号：US13113791

申请日：2011-05-23

Applicant: Richard K. Williams

Inventor： Richard K. Williams

IPC: G01R19/00 ,  G01R31/02 ,  G01R31/26 ,  G01R1/20 ,  H01L23/495 ,  H01L23/00 ,  H01L29/10

CPC classification number: G01R19/0092 ,  G01R1/203 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/25 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/088 ,  H01L29/1087 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7833 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05558 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48599 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73207 ,  H01L2224/73257 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M2001/0009 ,  H03K17/0822 ,  H03K17/18 ,  H03K2217/0027 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A cascode current sensor includes a main MOSFET and a sense MOSFET. The drain terminal of the main MOSFET is connected to a power device whose current is to be monitored, and the source and gate terminals of the main MOSFET are connected to the source and gate terminals, respectively, of the sense MOSFET. The drain voltages of the main and sense MOSFETs are equalized, in one embodiment by using a variable current source and negative feedback. The gate width of the main MOSFET is typically larger than the gate width of the sense MOSFET. Using the size ratio of the gate widths, the current in the main MOSFET is measured by sensing the magnitude of the current in the sense MOSFET. Inserting the relatively large MOSFET in the power circuit minimizes power loss.

Abstract translation: 共源共栅电流传感器包括主MOSFET和感测MOSFET。 主MOSFET的漏极端子连接到要监视其电流的功率器件，并且主MOSFET的源极和栅极端子分别连接到感测MOSFET的源极和栅极端子。 在一个实施例中，通过使用可变电流源和负反馈来使主感测MOSFET和感测MOSFET的漏极电压相等。 主MOSFET的栅极宽度通常大于读出MOSFET的栅极宽度。 使用栅极宽度的尺寸比，通过感测MOSFET中电流的大小来测量主MOSFET中的电流。 在电源电路中插入相对较大的MOSFET可以最大限度地减少功耗。

公开(公告)号：US08664715B2

公开(公告)日：2014-03-04

申请号：US13174775

申请日：2011-06-30

Applicant: Donald R. Disney ,  Richard K. Williams

Inventor： Donald R. Disney ,  Richard K. Williams

IPC: H01L29/66

CPC classification number: H01L29/0638 ,  H01L21/26586 ,  H01L29/0615 ,  H01L29/0626 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/086 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/41766 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7835 ,  H01L29/808 ,  H01L29/8613 ,  H01L29/866 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A transistor is formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench.

Abstract translation: 晶体管形成在隔离结构内，该隔离结构包括底板隔离区域和从衬底表面延伸到地板隔离区域的沟槽。 沟槽可以填充有介电材料，或者可以在中间部分具有导电材料，其中介电层衬在沟槽的壁上。

公开(公告)号：US20130147372A1

公开(公告)日：2013-06-13

申请号：US13347669

申请日：2012-01-10

Applicant: Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown

Inventor： Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown

IPC: H05B37/00

CPC classification number: H05B33/083 ,  H05B33/0815 ,  H05B33/0827 ,  H05B33/086 ,  H05B37/0254 ,  Y02B20/32

Abstract: A system for controlling multiple strings of LEDs includes a group of LED driver ICs, each of which includes a current sense feedback (CSFB) sample latch for storing a digital representation of the forward-voltage drop across a controlled LED string. Each CSFB latch is coupled to a register within a serial lighting interface (SLI) bus that both originates and terminates at an interface IC. As the data on the SLI bus is shifted into the interface IC, the interface IC selects the CSFB word that represents the highest forward-voltage drop of any of the controlled LED strings, which is then used by the interface IC to generate a CSFB signal for setting the appropriate supply voltage for the controlled LED strings.

Abstract translation: 用于控制多串LED的系统包括一组LED驱动器IC，每个LED驱动器IC包括用于存储跨受控LED串的正向压降的数字表示的电流检测反馈（CSFB）采样锁存器。 每个CSFB锁存器耦合到串行照明接口（SLI）总线中的寄存器，两者都在接口IC处发起并终止。 随着SLI总线上的数据被转移到接口IC中，接口IC选择表示任何受控LED串的最高正向压降的CSFB字，然后由接口IC用于产生一个CSFB信号 用于设置受控LED串的适当电源电压。

公开(公告)号：US20130147371A1

公开(公告)日：2013-06-13

申请号：US13347668

申请日：2012-01-10

Applicant: Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown

Inventor： Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown

IPC: H05B37/00

CPC classification number: H05B33/083 ,  H05B33/0815 ,  H05B33/0827 ,  H05B33/086 ,  H05B37/0254 ,  Y02B20/32

Abstract: A system for controlling multiple strings of LEDs includes a group of LED driver IC's, each of which includes a current sense feedback (CSFB) sample latch for storing a digital representation of the forward-voltage drop across a controlled LED string. Each CSFB latch is coupled to a register within a serial lighting interface (SLI) bus that both originates and terminates at an interface IC. As the data on the SLI bus is shifted into the interface IC, the interface IC selects the CSFB word that represents the highest forward-voltage drop of any of the controlled LED strings, which is then used by the interface IC to generate a CSFB signal for setting the appropriate supply voltage for the controlled LED strings.

Abstract translation: 用于控制多串LED的系统包括一组LED驱动器IC，每组LED驱动器IC包括用于存储跨受控LED串的正向压降的数字表示的电流检测反馈（CSFB）采样锁存器。 每个CSFB锁存器耦合到串行照明接口（SLI）总线中的寄存器，两者都在接口IC处发起并终止。 随着SLI总线上的数据被转移到接口IC中，接口IC选择表示任何受控LED串的最高正向压降的CSFB字，然后由接口IC用于产生一个CSFB信号 用于设置受控LED串的适当电源电压。

公开(公告)号：US20130147370A1

公开(公告)日：2013-06-13

申请号：US13346659

申请日：2012-01-09

Applicant: Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown

Inventor： Richard K. Williams ,  Kevin D'Angelo ,  David A. Brown

IPC: H05B37/00

CPC classification number: H05B33/083 ,  H05B33/0815 ,  H05B33/0827 ,  H05B33/086 ,  H05B37/0254 ,  Y02B20/32

Abstract: A system for controlling multiple strings of LEDs includes a group of LED driver ICs, each of which includes a current sense feedback (CSFB) sample latch for storing a digital representation of the forward-voltage drop across a controlled LED string. Each CSFB latch is coupled to a register within a serial lighting interface (SLI) bus that both originates and terminates at an interface IC. As the data on the SLI bus is shifted into the interface IC, the interface IC selects the CSFB word that represents the highest forward-voltage drop of any of the controlled LED strings, which is then used by the interface IC to generate a CSFB signal for setting the appropriate supply voltage for the controlled LED strings.

公开(公告)号：US20130043595A1

公开(公告)日：2013-02-21

申请号：US13210592

申请日：2011-08-16

Applicant: Richard K. Williams

Inventor： Richard K. Williams

IPC: H01L23/48

CPC classification number: H01L23/49811 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49551 ,  H01L23/49555 ,  H01L23/49572 ,  H01L24/73 ,  H01L2224/16145 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Thermal transfer from a silicon-on-insulator (SOI) die is improved by mounting the die in a bump-on-leadframe manner in a semiconductor package, with solder or other metal bumps connecting the active layer of the SOI die to metal leads used to mount the package on a printed circuit board or other support structure.

Abstract translation: 通过以半导体封装中的凸起引线框架方式将裸片安装在半导体封装中，通过将SOI裸片的有源层连接到金属引线上的焊料或其它金属凸块来改善来自绝缘体上硅（SOI）裸片的热传递 将封装安装在印刷电路板或其他支撑结构上。

公开(公告)号：US08035364B2

公开(公告)日：2011-10-11

申请号：US12148570

申请日：2008-04-21

Applicant: Richard K. Williams

Inventor： Richard K. Williams

IPC: G05F1/00

CPC classification number: H02M3/158 ,  H02M3/1588 ,  Y02B70/1466

Abstract: A freewheeling DC/DC step-down converter includes a high-side MOSFET, an inductor and an output capacitor connected between the input voltage and ground. A freewheeling clamp, which includes a freewheeling MOSFET and diode, is connected across the inductor. When the high-side MOSFET is turned off, a current circulates through the inductor and freewheeling clamp rather than to ground, improving the efficiency of the converter. The converter has softer diode recovery and less voltage overshoot and noise than conventional Buck converters and features unique benefits during light-load conditions.

Abstract translation: 续流DC / DC降压转换器包括连接在输入电压和地之间的高边MOSFET，电感器和输出电容器。 包括续流MOSFET和二极管的续流夹具连接在电感器两端。 当高侧MOSFET关断时，电流通过电感器和续流钳而不是接地，从而提高转换器的效率。 转换器具有比传统降压转换器更软的二极管恢复和更少的电压过冲和噪声，并且在轻负载条件下具有独特的优势。

公开(公告)号：US07956437B2

公开(公告)日：2011-06-07

申请号：US12455212

申请日：2009-05-28

Applicant: Richard K. Williams ,  Donald Ray Disney ,  Jun-Wei Chen ,  Wai Tien Chan ,  HyungSik Ryu

Inventor： Richard K. Williams ,  Donald Ray Disney ,  Jun-Wei Chen ,  Wai Tien Chan ,  HyungSik Ryu

IPC: H01L21/70

CPC classification number: H01L29/0646 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76237 ,  H01L21/76243 ,  H01L21/76267 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

公开(公告)号：US07956391B2

公开(公告)日：2011-06-07

申请号：US12072611

申请日：2008-02-27

Applicant: Donald R. Disney ,  Richard K. Williams

Inventor： Donald R. Disney ,  Richard K. Williams

IPC: H01L29/80

CPC classification number: H01L21/76243 ,  H01L21/26586 ,  H01L21/76267 ,  H01L21/763 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/098 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0626 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/086 ,  H01L29/10 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/41716 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/732 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7835 ,  H01L29/808 ,  H01L29/8613 ,  H01L29/866

Abstract: Various integrated circuit devices, in particular a junction field-effect transistor (JFET), are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.

Abstract translation: 各种集成电路器件，特别是结型场效应晶体管（JFET）形成在隔离结构内部，该隔离结构包括底板隔离区域和从衬底表面延伸到地板隔离区域的沟槽。 沟槽可以填充有介电材料，或者可以在中间部分具有导电材料，其中介电层衬在沟槽的壁上。 描述了通过使用保护环将基底隔离区域延伸超过沟槽并形成漂移区域来终止隔离结构的各种技术。