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207 条记录 (耗时 0.026 秒)

    SOLAR CELL WITH SHADE-FREE FRONT ELECTRODE
    32.
    发明申请
    SOLAR CELL WITH SHADE-FREE FRONT ELECTRODE 审中-公开
    太阳能电池与无电镀前电极

    公开(公告)号：US20110277816A1

    公开(公告)日：2011-11-17

    申请号：US13048804

    申请日：2011-03-15

    申请人： Zheng Xu ,  Jianming Fu ,  Jiunn Benjamin Heng ,  Chentao Yu

    发明人： Zheng Xu ,  Jianming Fu ,  Jiunn Benjamin Heng ,  Chentao Yu

    IPC分类号： H01L31/052 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L31/02363 ,  H01L31/056 ,  H01L31/0747 ,  Y02E10/52

    摘要： One embodiment of the present invention provides a solar cell with shade-free front electrode. The solar cell includes a photovoltaic body, a front-side ohmic contact layer situated above the photovoltaic body, a back-side ohmic contact layer situated below the photovoltaic body, a front-side electrode situated above the front-side ohmic contact layer, and a back-side electrode situated below the back-side ohmic contact layer. The front-side electrode includes a plurality of parallel metal grid lines, and the surface of at least one metal grid line is curved, thereby allowing incident light hitting the curved surface to be reflected downward and absorbed by the solar cell surface adjacent to the metal grid line.

    摘要翻译： 本发明的一个实施例提供一种具有无遮蔽的前电极的太阳能电池。 太阳能电池包括光电体，位于光电体上方的前侧欧姆接触层，位于光伏体下方的背面欧姆接触层，位于前侧欧姆接触层上方的前侧电极，以及 位于背侧欧姆接触层下方的背面电极。 前侧电极包括多个平行的金属网格线，并且至少一个金属网格线的表面是弯曲的，从而允许入射到该曲面的入射光向下反射并被靠近金属的太阳能电池表面吸收 网格线。

    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
    33.
    发明授权
    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement 有权
    金属化种子层的溅射沉积和蚀刻用于悬垂和侧壁改进

    公开(公告)号：US07294574B2

    公开(公告)日：2007-11-13

    申请号：US10915139

    申请日：2004-08-09

    申请人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

    发明人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

    摘要翻译： 一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。 在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

    Reliable sustained self-sputtering
    34.
    发明授权
    Reliable sustained self-sputtering 失效
    可靠的持续自溅射

    公开(公告)号：US5976334A

    公开(公告)日：1999-11-02

    申请号：US978433

    申请日：1997-11-25

    申请人： Jianming Fu ,  Zheng Xu

    发明人： Jianming Fu ,  Zheng Xu

    IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  C23C14/00

    CPC分类号： H01J37/3444 ,  C23C14/32 ,  C23C14/3457 ,  C23C14/54 ,  H01J37/3405

    摘要： A plasma physical vapor deposition (PVD) reactor configured for self sustained sputtering in which no sputtering working gas is required but the sputtered ions are sufficient to sustain the sputtering from the target. According to the invention, the power applied to the sputtering target is monitored to determine if sustained self-sputtering is being maintained. If the electrical parameters or other parameters in the chamber indicate that the self-sustained plasma has collapsed, a reinitialization procedure is begun including: admitting a working gas such as argon into the chamber; again exciting the plasma; and then effectively eliminating the working gas.

    摘要翻译： 等离子体物理气相沉积（PVD）反应器，其被配置用于不需要溅射工作气体的自持溅射，但溅射离子足以维持靶的溅射。 根据本发明，监测施加到溅射靶的功率，以确定是否保持持续的自溅射。 如果腔室中的电气参数或其他参数指示自持血浆已经塌缩，则开始重新初始化过程，包括：将诸如氩气的工作气体引入腔室; 再次激发等离子体; 然后有效地消除工作气体。

    Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
    36.
    发明授权
    Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design 有权
    异质结太阳能电池基于外延晶体硅薄膜在冶金硅基板上的设计

    公开(公告)号：US08283557B2

    公开(公告)日：2012-10-09

    申请号：US12401314

    申请日：2009-03-10

    申请人： Chentao Yu ,  Jiunn Benjamin Heng ,  Zheng Xu ,  Jianming Fu ,  Jianjun Liang

    发明人： Chentao Yu ,  Jiunn Benjamin Heng ,  Zheng Xu ,  Jianming Fu ,  Jianjun Liang

    IPC分类号： H01L31/00

    CPC分类号： H01L31/0747 ,  H01L31/02363 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

    摘要： One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.

    摘要翻译： 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。

    CONTROLLED SURFACE OXIDATION OF ALUMINUM INTERCONNECT
    39.
    发明申请
    CONTROLLED SURFACE OXIDATION OF ALUMINUM INTERCONNECT 审中-公开
    铝互连的控制表面氧化

    公开(公告)号：US20090050468A1

    公开(公告)日：2009-02-26

    申请号：US11843508

    申请日：2007-08-22

    申请人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

    发明人： A. MILLER ALLEN ,  Ashish Bodke ,  Yong Cao ,  Anthony C-T Chan ,  Jianming Fu ,  Zheng Xu ,  Yasunori Yokoyama

    IPC分类号： C23C14/34 ,  C23C14/54

    CPC分类号： C23C14/185 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76838 ,  H01L21/76888

    摘要： An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.

    摘要翻译： 用于集成电路的铝互连金属化在可选择地添加氩气的情况下在纯氧环境中被可控地氧化。 有利的是，当铝溅射时，将晶片从高于300℃的温度冷却到小于100℃，从而允许将镀铝的晶片装入塑料盒中。 氧化可以可控地发生在高真空和低真空转移室之间的通过室中。 氧分压有利地在0.01至1托，优选0.1至0.5托的范围内。 当将晶片放置在水冷基座上时，将氩气添加到大于1托的总压力促进晶片冷却。 为了防止氧回流到溅射室中，冷却室在冷却和第一氩气期间不被真空泵送，然后氧气被脉冲进入室。

    Rotational and reciprocal radial movement of a sputtering magnetron
    40.
    发明授权
    Rotational and reciprocal radial movement of a sputtering magnetron 失效
    溅射磁控管的旋转和往复的径向运动

    公开(公告)号：US06960284B2

    公开(公告)日：2005-11-01

    申请号：US10755644

    申请日：2004-01-12

    申请人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

    发明人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

    IPC分类号： H05H1/46 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

    CPC分类号： H01J37/3447 ,  C23C14/3457 ,  C23C14/35 ,  H01J37/3408

    摘要： A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target, possibly a combination of rotation about the center and radial oscillation. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

    摘要翻译： 用于物理气相沉积（PVD）的等离子体反应器，也称为溅射，其适于使得从目标溅射的原子物质能够自动维持等离子体而不需要诸如氩的工作气体。 特别适用于铜溅射的自持溅射（SSS）可以通过几种方式实现。 通过减小磁体的尺寸，磁控管的磁体组件的区域中的等离子体的密度增强了固定的目标功率。 为了提供更均匀的溅射，小磁控管在一个或两个维度上扫描在目标的背面，可能是围绕中心和径向振荡的旋转的组合。 此外，然后可以将衬底偏置以更有效地控制入射在晶片上的溅射粒子的能量和方向性。