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53 条记录 (耗时 0.036 秒)

    METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY
    31.
    发明申请
    METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY 有权
    通过新型电动机线圈组件校正基线的方法

    公开(公告)号：US20090159425A1

    公开(公告)日：2009-06-25

    申请号：US11960246

    申请日：2007-12-19

    申请人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    发明人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC分类号： H05H1/24

    CPC分类号： H01J37/321 ,  H01J37/3211 ,  H01J37/32174

    摘要： The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.

    摘要翻译： 本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。 本发明的一个实施例提供了一种被配置用于处理衬底的装置。 该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线 板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

    Heating apparatus to heat wafers using water and plate with turbolators
    32.
    发明授权
    Heating apparatus to heat wafers using water and plate with turbolators 失效
    加热装置用水和板与涡轮机加热晶片

    公开(公告)号：US07311779B2

    公开(公告)日：2007-12-25

    申请号：US10680359

    申请日：2003-10-06

    申请人： Son T. Nguyen ,  Gary J. Rosen ,  Ian A. Pancham

    发明人： Son T. Nguyen ,  Gary J. Rosen ,  Ian A. Pancham

    IPC分类号： B05C11/02 ,  B05C5/00 ,  B05B7/16 ,  C23C16/00

    CPC分类号： H01L21/67167 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/1676 ,  C23C18/168 ,  H01L21/288 ,  H01L21/67109 ,  H01L21/67248

    摘要： Embodiments of the invention provide a fluid processing method and apparatus. The apparatus includes a substrate support assembly positioned in a processing volume, a disk shaped member positioned in the processing volume in parallel orientation with a substrate supported on the substrate support assembly, a fluid outlet positioned in a central location of the disk shaped member, and a plurality of turbolators positioned on an upper surface of the disk shaped member, the turbolators being configured to generate a uniform turbulent flow of fluid traveling from the fluid outlet to a perimeter of the substrate. The method includes flowing a heated processing fluid over a plurality of turbolators that are positioned under a substrate being processed to control the temperature of the substrate during processing.

    摘要翻译： 本发明的实施例提供一种流体处理方法和装置。 该装置包括位于处理体积中的基板支撑组件，与支撑在基板支撑组件上的基板平行地定位在处理体积中的圆盘形构件，位于盘形构件的中心位置的流体出口，以及 多个涡轮机，其定位在所述盘形构件的上表面上，所述涡轮机构造成产生从所述流体出口行进到所述基板周边的均匀的流体流动。 该方法包括使加热的处理流体流过位于被处理的基底下方的多个涡轮机，以在加工期间控制基板的温度。

    Apparatus to improve wafer temperature uniformity for face-up wet processing
    33.
    发明授权
    Apparatus to improve wafer temperature uniformity for face-up wet processing 失效
    用于提高面朝上湿法处理的晶片温度均匀性的装置

    公开(公告)号：US07223308B2

    公开(公告)日：2007-05-29

    申请号：US10680325

    申请日：2003-10-06

    申请人： Ian A. Pancham ,  Son T. Nguyen ,  Gary J. Rosen

    发明人： Ian A. Pancham ,  Son T. Nguyen ,  Gary J. Rosen

    IPC分类号： B05C13/00 ,  B05C11/00 ,  C23C16/00

    CPC分类号： H01L21/67109 ,  C23C18/1628 ,  C23C18/1678

    摘要： A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid distribution member and contacts the backside of the substrate, thus heating the substrate. The fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side or processing side of the substrate.

    摘要翻译： 一种用于在无电沉积工艺期间控制衬底温度的方法和装置。 该装置包括沉积单元，该沉积单元构造成在流体分配构件上方的位置处支撑基板。 加热的流体从流体分配构件分配并接触基底的背面，从而加热基底。 从被配置成在衬底表面上保持恒定温度的孔分配流体。 该方法包括使加热的流体通过扩散构件以基板的背面流动的形式，该结构被构造成在衬底的前侧或处理侧产生恒定的处理温度。

    SYSTEMS AND/OR METHODS FOR DYNAMIC SELECTION OF RULES PROCESSING MODE
    34.
    发明申请
    SYSTEMS AND/OR METHODS FOR DYNAMIC SELECTION OF RULES PROCESSING MODE 有权
    用于动态选择规则处理模式的系统和/或方法

    公开(公告)号：US20130339285A1

    公开(公告)日：2013-12-19

    申请号：US13524360

    申请日：2012-06-15

    申请人： Barry S. DRESDNER ,  Son T. Nguyen

    发明人： Barry S. DRESDNER ,  Son T. Nguyen

    IPC分类号： G06N5/02

    CPC分类号： G06N5/02 ,  G06N5/025

    摘要： Certain example embodiments described herein relate to techniques for dynamically selecting rule processing modes. The processing mode does not need to be specified during rule design/authoring. Two sets of artifacts may be generated to support a desired processing mode. This may occur in the designer's local workspace, e.g., so that rule invocation can be tested locally. Additionally, or alternatively, both sets of artifacts may be installed on the rule engine running on a remote server when the project is deployed. The designer need not be aware that both sets of artifacts are being generated. In certain example embodiments, the designer may have the ability to sequence rules within metaphors (or decision entities such as decision tables), and/or the ability to sequence metaphors within rule sets. During rule invocation, a parameter may be provided to indicate the processing mode (e.g., sequential or inferential) to be used by the rule engine.

    摘要翻译： 这里描述的某些示例实施例涉及用于动态选择规则处理模式的技术。 在规则设计/创作过程中，不需要指定处理模式。 可以生成两组伪影以支持期望的处理模式。 这可能发生在设计人员的本地工作区中，例如，可以在本地测试规则调用。 另外或替代地，当部署项目时，两组工件可以安装在在远程服务器上运行的规则引擎上。 设计者不需要知道正在生成两组工件。 在某些示例性实施例中，设计者可能具有在隐喻（或决策实体，例如决策表）中排序规则的能力，和/或在规则集内对序列隐喻进行排序的能力。 在规则调用期间，可以提供参数以指示要由规则引擎使用的处理模式（例如，顺序或推断）。

    Dual zone gas injection nozzle
    36.
    发明授权
    Dual zone gas injection nozzle 有权
    双区气体喷嘴

    公开(公告)号：US08137463B2

    公开(公告)日：2012-03-20

    申请号：US11960166

    申请日：2007-12-19

    申请人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    发明人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC分类号： H01J37/3244 ,  H01J37/32449

    摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

    摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

    DUAL ZONE GAS INJECTION NOZZLE
    38.
    发明申请
    DUAL ZONE GAS INJECTION NOZZLE 有权
    双区气体喷射喷嘴

    公开(公告)号：US20090159424A1

    公开(公告)日：2009-06-25

    申请号：US11960166

    申请日：2007-12-19

    申请人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    发明人： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC分类号： H05H1/24 ,  B01J19/08

    CPC分类号： H01J37/3244 ,  H01J37/32449

    摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

    摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。