公开(公告)号：US07223323B2

公开(公告)日：2007-05-29

申请号：US10616284

申请日：2003-07-08

申请人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

发明人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

IPC分类号： C25B9/12 ,  C35D3/38 ,  B08B3/02

CPC分类号： H01L21/6719 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  B08B3/02 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

摘要翻译： 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

公开(公告)号：US06869516B2

公开(公告)日：2005-03-22

申请号：US10273539

申请日：2002-10-18

申请人： Dmitry Lubomirsky ,  Michael X. Yang ,  Girish A. Dixit ,  Vincent E. Burkhart ,  Allen L. D'Ambra ,  Yeuk-Fai Edwin Mok ,  Harald Herchen

发明人： Dmitry Lubomirsky ,  Michael X. Yang ,  Girish A. Dixit ,  Vincent E. Burkhart ,  Allen L. D'Ambra ,  Yeuk-Fai Edwin Mok ,  Harald Herchen

IPC分类号： C25D7/12 ,  C25D21/00 ,  H01L21/288 ,  C25D5/48

CPC分类号： C25D7/12 ,  C25D21/00 ,  H01L21/2885

摘要： A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.

摘要翻译： 提供了一种用于清洁电化学电镀接触环的电接触区域或衬底接触区域的方法。 该方法的实施例包括将基板定位在具有一个或多个电触点的基板支撑构件上，在基板表面的至少一部分上化学镀覆金属层，从处理基板移除经处理的基板，并清洁该基板 或更多的与包含醇的蒸汽混合物的电接触。 在另一方面，该方法包括在旋转衬底支撑构件的同时将蒸气混合物喷射到电触点上。

公开(公告)号：US07473339B2

公开(公告)日：2009-01-06

申请号：US10826489

申请日：2004-04-16

申请人： Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Yevgeniy (Eugene) Rabinovich ,  Dmitry Lubomirsky

发明人： Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Yevgeniy (Eugene) Rabinovich ,  Dmitry Lubomirsky

IPC分类号： C25D17/00 ,  C25D21/14 ,  C25D7/12

CPC分类号： C25D17/00

摘要： Embodiments of the invention generally provide a fluid delivery system for an electrochemical plating platform. The fluid delivery system is configured to supply multiple chemistries to multiple plating cells with minimal bubble formation in the fluid delivery system. The system includes a solution mixing system, a fluid distribution manifold in communication with the solution mixing system, a plurality of fluid conduits in fluid communication with the fluid distribution manifold, and a plurality of fluid tanks, each of the plurality of fluid tanks being in fluid communication with at least one of the plurality of fluid conduits.

摘要翻译： 本发明的实施方案通常提供用于电化学电镀平台的流体输送系统。 流体输送系统被配置为在流体输送系统中以最小的气泡形成向多个电镀单元提供多个化学物质。 该系统包括溶液混合系统，与溶液混合系统连通的流体分配歧管，与流体分配歧管流体连通的多个流体导管和多个流体箱，多个流体箱中的每一个处于 与多个流体导管中的至少一个流体连通。

公开(公告)号：US06660126B2

公开(公告)日：2003-12-09

申请号：US09798251

申请日：2001-03-02

申请人： Anh N. Nguyen ,  Michael X. Yang ,  Ming Xi ,  Hua Chung ,  Anzhong Chang ,  Xiaoxiong Yuan ,  Siqing Lu

发明人： Anh N. Nguyen ,  Michael X. Yang ,  Ming Xi ,  Hua Chung ,  Anzhong Chang ,  Xiaoxiong Yuan ,  Siqing Lu

IPC分类号： H05H100

CPC分类号： C23C16/45544 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/452 ,  H01L21/67017

摘要： A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

公开(公告)号：US06734020B2

公开(公告)日：2004-05-11

申请号：US09800881

申请日：2001-03-07

申请人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi

发明人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi

IPC分类号： G01N3508

CPC分类号： G05D11/133 ,  Y10T436/104998 ,  Y10T436/12

摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

摘要翻译： 用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。 该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。 控制阀的刷新时间可能小于10毫秒。 因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。 可以通过可编程逻辑控制器的输出电源实现硬件互锁。

公开(公告)号：US07201803B2

公开(公告)日：2007-04-10

申请号：US10731651

申请日：2003-12-09

申请人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong (Andrew) Chang ,  Anh N. Nguyen ,  Ming Xi

发明人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong (Andrew) Chang ,  Anh N. Nguyen ,  Ming Xi

IPC分类号： B05C11/00

CPC分类号： G05D11/133 ,  Y10T436/104998 ,  Y10T436/12

摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

摘要翻译： 用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。 该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。 控制阀的刷新时间可能小于10毫秒。 因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。 可以通过可编程逻辑控制器的输出电源实现硬件互锁。

公开(公告)号：US07514353B2

公开(公告)日：2009-04-07

申请号：US11385344

申请日：2006-03-20

申请人： Timothy W. Weidman ,  Kapila P. Wijekoon ,  Zhize Zhu ,  Avgerinos V. (Jerry) Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Fang Mei ,  Farhad K. Moghadam

发明人： Timothy W. Weidman ,  Kapila P. Wijekoon ,  Zhize Zhu ,  Avgerinos V. (Jerry) Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Fang Mei ,  Farhad K. Moghadam

IPC分类号： H01L21/4763

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

摘要翻译： 本发明的实施例通常提供了通过在接触特征上沉积阻挡层然后使用PVD，CVD，ALD，电化学电镀工艺（ECP）和/或无电镀沉积来填充层来填充形成在半导体器件中的接触电平特征的方法 过程。 在一个实施例中，阻挡层具有催化活性表面，其将允许在阻挡层上无电沉积金属。 一方面，无电沉积金属是铜或铜合金。 在一个方面，通过使用无电镀沉积工艺，用铜合金填充接触层的特征。 另一方面，铜合金用于从导电铜层薄层中，该铜层用于随后通过使用ECP，PVD，CVD和/或ALD沉积工艺用含铜材料填充特征。 在一个实施例中，阻挡层的一部分有意地被允许与触点电平特征的硅结处的痕迹的残余氧化物反应以形成低电阻连接。

公开(公告)号：US07247222B2

公开(公告)日：2007-07-24

申请号：US10268284

申请日：2002-10-09

申请人： Michael X. Yang ,  Dmitry Lubomirsky ,  Yezdi Dordi ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

发明人： Michael X. Yang ,  Dmitry Lubomirsky ,  Yezdi Dordi ,  Saravjeet Singh ,  Sheshraj Tulshibagwale ,  Nicolay Kovarsky

IPC分类号： C25B9/00 ,  C25C7/04 ,  C25B9/08

CPC分类号： H01L21/2885 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  C07F9/103 ,  C25D7/123 ,  C25D17/001

摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.

摘要翻译： 本发明的实施方案通常可以提供小体积的电化学电镀单元。 电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。 电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽 多个槽中的每一个终止于环形排水通道。 提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，所述膜支撑组件具有形成在其中的多个通道和孔。

公开(公告)号：US20100311237A1

公开(公告)日：2010-12-09

申请号：US12846253

申请日：2010-07-29

申请人： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

发明人： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

摘要： A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

摘要翻译： 公开了一种在基片上形成材料的方法。 在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度 等离子体退火工艺。 随后在氮化钽层上沉积含金属的层。

公开(公告)号：US06939804B2

公开(公告)日：2005-09-06

申请号：US10299212

申请日：2002-11-18

申请人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

发明人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

IPC分类号： C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.