公开(公告)号：US07863152B2

公开(公告)日：2011-01-04

申请号：US12072445

申请日：2008-02-26

申请人： Seung-hwan Lee ,  Heon-jong Shin ,  Shigenobu Maeda ,  Sung-rey Wi ,  Quan WangXiao ,  Hyun-min Choi

发明人： Seung-hwan Lee ,  Heon-jong Shin ,  Shigenobu Maeda ,  Sung-rey Wi ,  Quan WangXiao ,  Hyun-min Choi

IPC分类号： H01L21/762

CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/0207 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7833

摘要： A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.

摘要翻译： 提供了具有应变层的半导体器件和制造具有能够减小负载效应的应变层的半导体器件的方法。 通过设置不重叠的活动假人和门虚拟物，可以确保将形成应变层虚拟物的活动虚拟物的面积，从而降低装载效果。

公开(公告)号：US20100265343A1

公开(公告)日：2010-10-21

申请号：US12750273

申请日：2010-03-30

申请人： Seung-hwan Lee ,  Kwang-seok Byon ,  Kyung-bae Lee

发明人： Seung-hwan Lee ,  Kwang-seok Byon ,  Kyung-bae Lee

IPC分类号： H04N5/228

CPC分类号： H04N5/2254 ,  G02B27/646 ,  H04N5/23248

摘要： An image stabilization driving assembly that corrects a shake of a digital camera includes a driving plate in which a correction lens is mounted and that operates in a direction perpendicular to an optical axis; a base plate that supports the driving plate at a rear of the driving plate; a tilt correction plate fastened at a rear of the base plate and that adjusts the fastening degree and corrects tilting of the driving plate; and a plurality of suspension wires having one end fixed to the driving plate, another end fixed to the tilt correction plate, and extending through the base plate. The plurality of suspension wires may be formed of an elastic material.

摘要翻译： 校正数字照相机抖动的图像稳定驱动组件包括其中安装校正透镜并在垂直于光轴的方向上操作的驱动板; 基板，其在所述驱动板的后部支撑所述驱动板; 倾斜校正板，固定在基板的后部，并调节紧固度并修正驱动板的倾斜; 以及多个悬挂线，其一端固定在驱动板上，另一端固定在倾斜校正板上并延伸穿过基板。 多个悬挂线可以由弹性材料形成。

公开(公告)号：US20090096008A1

公开(公告)日：2009-04-16

申请号：US12249004

申请日：2008-10-10

申请人： Sun-jung Kim ,  Young-geun Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Se-hoon Oh ,  Young-sun Kim ,  Sung-tae Kim

发明人： Sun-jung Kim ,  Young-geun Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Se-hoon Oh ,  Young-sun Kim ,  Sung-tae Kim

IPC分类号： H01L29/788 ,  H01L23/58

CPC分类号： H01L29/42332 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42348

摘要： A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La2-xAlxOy and the composition parameter x may be 1

摘要翻译： 提供了具有优异数据保存性能的阻挡绝缘层的非易失性存储器件及其制造方法。 非易失性存储器件可以包括其中形成有沟道区的半导体衬底; 以及栅极堆叠，其包括顺序堆叠在半导体衬底的沟道区上的隧道绝缘层，电荷存储层，阻挡绝缘层和控制栅电极。 阻挡绝缘层可以包含具有下式的La 2-x Al x O y的氧化镧铝，组成参数x可以是1

公开(公告)号：US20080135879A1

公开(公告)日：2008-06-12

申请号：US12029884

申请日：2008-02-12

申请人： Dong-suk Shin ,  Hwa-sung Rhee ,  Ueno Tetsuji ,  Ho Lee ,  Seung-hwan Lee

发明人： Dong-suk Shin ,  Hwa-sung Rhee ,  Ueno Tetsuji ,  Ho Lee ,  Seung-hwan Lee

IPC分类号： H01L27/092

CPC分类号： H01L29/66636 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/7848

摘要： In a method of fabricating a CMOS transistor, and a CMOS transistor fabricated according to the method, the characteristics of first and second conductivity type MOS transistors are both simultaneously improved. At the same time, the fabrication process is simplified by reducing the number of masks required. The method includes amorphizing the active region of only the second conductivity type MOS transistor, and performing selective etching to form a first recessed region of a first depth in the active region of the first conductivity type MOS transistor and a second recessed region of a second depth that is greater than the first depth in the active region of the second conductivity type MOS transistor. Selective epitaxial growth is performed in the first and second recessed regions to form an elevated epitaxial layer that fills the first recessed region and extends to a level that is above the upper surface of the semiconductor substrate and to form a recessed epitaxial layer that fills the second recessed region.

摘要翻译： 在制造CMOS晶体管的方法和根据该方法制造的CMOS晶体管的情况下，第一和第二导电型MOS晶体管的特性都同时改善。 同时，通过减少所需掩模的数量来简化制造过程。 该方法包括仅使第二导电型MOS晶体管的有源区非晶化，并进行选择性蚀刻，以在第一导电类型MOS晶体管的有源区中形成第一深度的第一凹陷区域和第二深度的第二凹陷区域 大于第二导电型MOS晶体管的有源区中的第一深度。 在第一和第二凹陷区域中执行选择性外延生长，以形成一个升高的外延层，其填充第一凹陷区域并延伸到半导体衬底的上表面之上的水平面并形成填充第二凹陷区域的凹陷外延层 凹陷区域。

公开(公告)号：US20080096340A1

公开(公告)日：2008-04-24

申请号：US11605236

申请日：2006-11-29

申请人： Se-hoon Oh ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

发明人： Se-hoon Oh ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/8238

CPC分类号： H01L29/513 ,  G11C16/0466 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/3185 ,  H01L29/40117

摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a charge blocking layer on the charge trapping layer by supplying sequentially a metal source gas and an oxidizing gas onto the charge trapping layer, such that a supplying time of the oxidizing gas is form about 0.1 second to about 1.0 second, and forming a gate electrode layer on the charge blocking layer.

摘要翻译： 一种制造非易失性存储器件的方法包括在半导体衬底上形成电荷隧道层，在电荷隧穿层上形成电荷俘获层，在电荷俘获层上形成电荷阻挡层，依次提供金属源气体和氧化 气体进入电荷捕获层，使得氧化气体的供给时间形成约0.1秒至约1.0秒，并在电荷阻挡层上形成栅极电极层。

公开(公告)号：US20070040207A1

公开(公告)日：2007-02-22

申请号：US11586291

申请日：2006-10-25

申请人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

发明人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L29/00

CPC分类号： H01L21/02186 ,  C23C16/405 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

摘要翻译： 形成电子器件的方法包括提供第一电极，在第一电极上提供电介质氧化物层，并在电介质氧化物层上提供第二电极，使得电介质氧化物层位于第一和第二电极之间。 更具体地，与第一电极相邻的电介质氧化物层的第一部分可以具有第一密度的钛，并且与第一电极相对的电介质氧化物层的第二部分可具有不同于第一密度的钛的第二密度。 还讨论了相关结构。

公开(公告)号：US20060172501A1

公开(公告)日：2006-08-03

申请号：US11346107

申请日：2006-02-02

申请人： Tetsuji Ueno ,  Dong-suk Shin ,  Hwa-sung Rhee ,  Ho Lee ,  Seung-hwan Lee

发明人： Tetsuji Ueno ,  Dong-suk Shin ,  Hwa-sung Rhee ,  Ho Lee ,  Seung-hwan Lee

IPC分类号： H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/02661

摘要： Provided is a method of manufacturing a high-quality silicon epitaxial growth. (SEG) layer on a highly doped silicon substrate. The method includes providing a semiconductor substrate including dopant areas with a predetermined concentration, implanting group IV ions into the substrate, cleaning the substrate using a chlorine-based gas, and forming a silicon epitaxial growth (SEG) layer on the substrate.

摘要翻译： 提供一种制造高质量硅外延生长的方法。 （SEG）层。 该方法包括提供包括具有预定浓度的掺杂剂区域的半导体衬底，将IV族离子注入到衬底中，使用氯基气体清洁衬底，以及在衬底上形成硅外延生长（SEG）层。

公开(公告)号：US20050186687A1

公开(公告)日：2005-08-25

申请号：US11002571

申请日：2004-12-02

申请人： Seung-hwan Lee ,  Jae-dong Byun ,  Sung-tae Kim ,  Young-sun Kim ,  Dal-won Lee ,  Song-won Ko

发明人： Seung-hwan Lee ,  Jae-dong Byun ,  Sung-tae Kim ,  Young-sun Kim ,  Dal-won Lee ,  Song-won Ko

IPC分类号： H01L27/108 ,  H01L21/00 ,  H01L21/02 ,  H01L21/314 ,  H01L21/8242 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/56

摘要： Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.

摘要翻译： 形成半导体器件的电容器的方法可以包括在半导体衬底上形成电容器的下电极并形成Ba（Ti 1-x Sn Sn x x）的介电材料层 3）（3）（BTS）或Ba（Ti 1-x Zr x x）O 3（BTZ） 在下电极上。 可以在介电材料层上形成非晶层。 可以在非晶层上形成电容器的上电极。

公开(公告)号：US06893915B2

公开(公告)日：2005-05-17

申请号：US10127651

申请日：2002-04-22

申请人： Hee-sook Park ,  Gil-heyun Choi ,  Seung-hwan Lee ,  Yun-jung Lee

发明人： Hee-sook Park ,  Gil-heyun Choi ,  Seung-hwan Lee ,  Yun-jung Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L28/75 ,  H01L28/90

摘要： A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an aluminum alloy layer, a tungsten layer, or a copper layer is formed on the barrier layer. The barrier layer is one of a TiN layer, a TaN layer, a WN layer, and an MoN layer. The TiN layer is one of formed by using an MOCVD process and an ALD process, and the halide-free precursor is a titanium compound selected from the group consisting of pentakis(diethylamino) titanium, tetrakis(diethylamino) titanium, tetrakis(dimethylamino)titanium, and pentakis(dimethylamino)titanium. The TaN layer is formed by using one of an MOCVD process and an ALD process, and the halide-free precursor is a tantalum compound selected from the group consisting of t-butyltrikis(diethylamino)tantalum, pentakis(diethylamino)tantalum, tetrakis(dimethylamino)tantalum, and pentakis(dimethylamino)tantalum.

摘要翻译： 提供一种制造半导体器件的方法。 在处理室中的半导体衬底上形成钌层。 在处理室中提供无卤素前体的钌层上形成阻挡层。 在阻挡层上形成铝层，铝合金层，钨层，铜层等金属层。 阻挡层是TiN层，TaN层，WN层和MoN层之一。 TiN层是通过使用MOCVD法和ALD法形成的，并且不含卤化物的前体是选自五（二乙基氨基）钛，四（二乙基氨基）钛，四（二甲基氨基）钛，四 ，和五（二甲基氨基）钛。 通过使用MOCVD法和ALD法之一形成TaN层，无卤素前体是选自叔丁基（二乙氨基）钽，五（二乙基氨基）钽，四（二甲基氨基） ）钽和五（二甲基氨基）钽。

公开(公告)号：US08243147B2

公开(公告)日：2012-08-14

申请号：US12835831

申请日：2010-07-14

申请人： Seung-hwan Lee

发明人： Seung-hwan Lee

IPC分类号： H04N9/04 ,  H04N5/228

CPC分类号： G03B5/00 ,  H02K41/0354 ,  H02K2201/18

摘要： A handshake correction apparatus is provided that comprises: a correction lens that is driven in a plane defined by a first axis and a second axis that are each independent; a pair of first magnets disposed at opposite sides of the correction lens for providing a driving force in a first axis direction; at least one second magnet disposed on at least one side of the correction lens for providing a driving force in a second axis direction; and driving coils disposed to face the first and second magnets for exerting electromagnetic interaction therebetween. In the handshake correction apparatus, a rotation of the correction lens is minimized to improve a controlling characteristic.

摘要翻译： 提供了一种握手校正装置，包括：校正透镜，其在由第一轴和第二轴限定的平面中被驱动，所述第一轴和第二轴各自独立; 设置在所述校正透镜的相对侧的一对第一磁体，用于在第一轴线方向上提供驱动力; 设置在所述校正透镜的至少一侧的至少一个第二磁体，用于在第二轴线方向上提供驱动力; 以及设置成面对第一和第二磁体的驱动线圈，用于在它们之间施加电磁相互作用。 在握手校正装置中，校正透镜的旋转被最小化以改善控制特性。