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786 条记录 (耗时 0.045 秒)

    Electrical connector
    32.
    发明授权
    Electrical connector 有权
    电连接器

    公开(公告)号：US08523592B1

    公开(公告)日：2013-09-03

    申请号：US13477201

    申请日：2012-05-22

    申请人： Jun Liu ,  Yong Quan Wu

    发明人： Jun Liu ,  Yong Quan Wu

    IPC分类号： H01R13/62

    CPC分类号： H01R13/506 ,  G06K13/0862 ,  H01R12/88 ,  H01R13/447 ,  H01R13/6581

    摘要： An electrical connector includes a base, a cover and at least one elastic member. The base is disposed with at least one fastening portion and at least one pivoting portion. The cover covers on the base, disposed with at least one locking portion correspondingly locking the fastening portion, and capable of being opened or closed relative to the base about the pivoting portion. The at least one elastic member press against the base. When the locking portion unlocks the fastening portion, the elastic member pops up automatically due to elasticity, so that an operating space is formed below the cover to allow an operator to open the cover with fingers, which facilitates operation and does not cause injuries of the fingers, thereby ensuring safe use.

    摘要翻译： 电连接器包括底座，盖和至少一个弹性构件。 底座设置有至少一个紧固部分和至少一个枢转部分。 盖子覆盖在基座上，其中设置有至少一个锁定部分，相应地锁定紧固部分，并能够围绕枢转部分相对于基座打开或关闭。 所述至少一个弹性构件压靠所述基座。 当锁定部分解除紧固部分时，弹性部件由于弹性而自动弹起，从而在盖子的下方形成操作空间，以便操作者用手指打开盖子，这便于操作并且不会造成伤害 手指，从而确保安全使用。

    Memory cells
    33.
    发明授权
    Memory cells 有权
    记忆单元

    公开(公告)号：US08488365B2

    公开(公告)日：2013-07-16

    申请号：US13034031

    申请日：2011-02-24

    申请人： Jun Liu ,  Gurtej S. Sandhu

    发明人： Jun Liu ,  Gurtej S. Sandhu

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0007 ,  G11C2013/0073 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/145 ,  H01L45/1608 ,  H01L45/165

    摘要： Some embodiments include methods in which a memory cell is formed to have programmable material between first and second access lines, with the programmable material having two compositionally different regions. A concentration of ions and/or ion-vacancies may be altered in at least one of the regions to change a memory state of the memory cell and to simultaneously form a pn diode. Some embodiments include memory cells having programmable material with two compositionally different regions, and having ions and/or ion-vacancies diffusible into at least one of the regions. The memory cell has a memory state in which the first and second regions are of opposite conductivity type relative to one another.

    摘要翻译： 一些实施例包括其中存储单元形成为在第一和第二访问线之间具有可编程材料的方法，其中可编程材料具有两个组成上不同的区域。 可以在至少一个区域中改变离子和/或离子空位的浓度以改变存储器单元的存储状态并同时形成pn二极管。 一些实施例包括具有两个组成不同区域的可编程材料并且具有可扩散到至少一个区域中的离子和/或离子空位的存储器单元。 存储单元具有其中第一和第二区域相对于彼此具有相反导电类型的存储状态。

    Integrated circuits with asymmetric and stacked transistors
    34.
    发明授权
    Integrated circuits with asymmetric and stacked transistors 有权
    具有不对称和堆叠晶体管的集成电路

    公开(公告)号：US08482963B1

    公开(公告)日：2013-07-09

    申请号：US12629831

    申请日：2009-12-02

    申请人： Jun Liu ,  Yanzhong Xu ,  Shankar Sinha ,  Shih-Lin S. Lee ,  Jeffrey Xiaoqi Tung ,  Albert Ratnakumar ,  Qi Xiang ,  Irfan Rahim ,  Andy L. Lee ,  Jeffrey T. Watt ,  Srinivas Perisetty

    发明人： Jun Liu ,  Yanzhong Xu ,  Shankar Sinha ,  Shih-Lin S. Lee ,  Jeffrey Xiaoqi Tung ,  Albert Ratnakumar ,  Qi Xiang ,  Irfan Rahim ,  Andy L. Lee ,  Jeffrey T. Watt ,  Srinivas Perisetty

    IPC分类号： G11C11/00

    CPC分类号： G11C11/412

    摘要： Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.

    摘要翻译： 不对称晶体管可以通过在晶体管的一个源极 - 漏极端子上而不是另一个产生凹穴注入来形成。 也可以使用具有不同功函数的第一和第二栅极导体的双栅结构来形成非对称晶体管。 可以通过堆叠相同通道类型的两个晶体管串联形成堆叠晶体管。 两个晶体管中的每一个的源极 - 漏极端子之一连接到公共节点。 两个晶体管的栅极也连接在一起。 两个晶体管可以具有不同的阈值电压。 位于堆叠晶体管中较高的晶体管的阈值电压可以具有比堆叠晶体管中的另一个晶体管更低的阈值电压。 堆叠的晶体管可用于减少诸如存储器单元的电路中的漏电流。 不对称晶体管也可用于存储器单元中以减少泄漏。

    RARE EARTH-ALUMINIUM/GALLATE BASED FLUORESCENT MATERIAL AND MANUFACTURING METHOD THEREOF
    36.
    发明申请
    RARE EARTH-ALUMINIUM/GALLATE BASED FLUORESCENT MATERIAL AND MANUFACTURING METHOD THEREOF 审中-公开
    稀土 - 铝/玻璃基荧光材料及其制造方法

    公开(公告)号：US20130153823A1

    公开(公告)日：2013-06-20

    申请号：US13643165

    申请日：2010-04-30

    申请人： Mingjie Zhou ,  Jun Liu ,  Wenbo Ma

    发明人： Mingjie Zhou ,  Jun Liu ,  Wenbo Ma

    IPC分类号： C09K11/77

    CPC分类号： C09K11/7721 ,  C09K11/02 ,  C09K11/7774

    摘要： A rare earth-aluminium/gallate based fluorescent material and manufacturing method thereof are provided. Said rare earth-aluminium/gallate based fluorescent material comprises a core, and a shell which coats said core, wherein said core is a metal nanoparticle, and said shell is a fluorescent powder of chemical formula (Y1-xCex)3(Al1-yGay)5O12, 0

    摘要翻译： 提供稀土 - 铝/没食子酸酯基荧光材料及其制造方法。 所述稀土 - 铝/没食子酸酯基荧光材料包括芯和覆盖所述芯的壳，其中所述芯是金属纳米颗粒，所述壳是化学式（Y1-xCex）3（Al1-yGay）的荧光粉末 ）5O12,0

    Spin current generator for STT-MRAM or other spintronics applications
    37.
    发明授权
    Spin current generator for STT-MRAM or other spintronics applications 有权
    用于STT-MRAM或其他自旋电子学应用的自旋电流发生器

    公开(公告)号：US08462544B2

    公开(公告)日：2013-06-11

    申请号：US13555940

    申请日：2012-07-23

    申请人： Jun Liu ,  Gurtej Sandhu

    发明人： Jun Liu ,  Gurtej Sandhu

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

    摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

    摘要翻译： 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

    IMAGE RECONSTRUCTION USING REDUNDANT HAAR WAVELETS
    39.
    发明申请
    IMAGE RECONSTRUCTION USING REDUNDANT HAAR WAVELETS 有权
    使用冗余HAAR波段的图像重建

    公开(公告)号：US20130121554A1

    公开(公告)日：2013-05-16

    申请号：US13616484

    申请日：2012-09-14

    申请人： Jun Liu ,  Jeremy Rapin ,  Alban Lefebvre ,  Mariappan S. Nadar ,  Ti-chiun Chang ,  Michael Zenge ,  Edgar Müller

    发明人： Jun Liu ,  Jeremy Rapin ,  Alban Lefebvre ,  Mariappan S. Nadar ,  Ti-chiun Chang ,  Michael Zenge ,  Edgar Müller

    IPC分类号： G06T11/00

    CPC分类号： G06T11/005 ,  G01R33/482 ,  G01R33/5611 ,  G01R33/5619 ,  G01R33/56308

    摘要： A method for image reconstruction includes receiving under-sampled k-space data, determining a data fidelity term of a first image of the under-sampled k-space data in view of a second image of the under-sampled k-space data, wherein a time component separated the first image and the second image, determining a spatial penalization on redundant Haar wavelet coefficients of the first image in view of the second image, and optimizing the first image according the data fidelity term and the spatial penalization, wherein the spatial penalization selectively penalizes temporal coefficients and an optimized image of the first image is output.

    摘要翻译： 一种用于图像重构的方法包括：接收未被采样的k空间数据，鉴于未被采样的k空间数据的第二图像，确定未被采样的k空间数据的第一图像的数据保真度项，其中 时间分量分离第一图像和第二图像，根据第二图像确定第一图像的冗余Haar小波系数的空间惩罚，以及根据数据保真度项和空间惩罚优化第一图像，其中空间 惩罚性选择性地惩罚时间系数，并且输出第一图像的优化图像。

    Single-crystalline silicon alkaline texturing with glycerol or ethylene glycol additives
    40.
    发明授权
    Single-crystalline silicon alkaline texturing with glycerol or ethylene glycol additives 有权
    甘油或乙二醇添加剂的单晶硅碱性织构

    公开(公告)号：US08440494B2

    公开(公告)日：2013-05-14

    申请号：US13112465

    申请日：2011-05-20

    申请人： Kathryn C. Fisher ,  Jun Liu ,  Satyavolu S. Papa Rao ,  George G. Totir ,  James Vichiconti

    发明人： Kathryn C. Fisher ,  Jun Liu ,  Satyavolu S. Papa Rao ,  George G. Totir ,  James Vichiconti

    IPC分类号： H01L21/00

    CPC分类号： C09K13/02 ,  H01L31/02363 ,  Y02E10/50

    摘要： Alternative additives that can be used in place of isopropyl alcohol in aqueous alkaline etchant solutions for texturing a surface of a single-crystalline silicon substrate are provided. The alternative additives do not have volatile constituents, yet can be used in an aqueous alkaline etchant solution to provide a pyramidal shaped texture surface to the single-crystalline silicon substrate that is exposed to such an etchant solution. Also provided is a method of forming a textured silicon surface. The method includes immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface on the single-crystalline silicon substrate. The etchant solution includes an alkaline component, silicon (etched into the solution as a bath conditioner) and glycerol or ethylene glycol as an additive. The textured surface of the single-crystalline silicon substrate has (111) faces that are now exposed.

    摘要翻译： 提供了可用于代替异丙醇的水性碱性蚀刻剂溶液中用于织构单晶硅衬底的表面的替代添加剂。 替代的添加剂不具有挥发性成分，但也可用于碱性蚀刻剂水溶液中以向暴露于这种蚀刻剂溶液的单晶硅衬底提供金字塔形的纹理表面。 还提供了形成纹理硅表面的方法。 该方法包括将单晶硅衬底浸入蚀刻剂溶液中以在单晶硅衬底上形成棱锥形织构表面。 蚀刻剂溶液包括碱性组分，硅（作为浴调节剂蚀刻到溶液中）和甘油或乙二醇作为添加剂。 单晶硅衬底的纹理表面具有现在暴露的（111）面。