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公开(公告)号：US5497726A
公开(公告)日：1996-03-12
申请号：US240826
申请日：1994-05-11
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。
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公开(公告)号：US5446329A
公开(公告)日：1995-08-29
申请号：US118976
申请日：1993-09-09
CPC分类号： H03H9/02582
摘要： A surface acoustic wave element includes a hard layer containing a composition component essentially consisting of at least one of diamond and a diamond-like carbon film, a piezoelectric layer formed on the hard layer, a silicon dioxide (SiO.sub.2) layer formed on the piezoelectric layer, and electrodes combined with the piezoelectric layer to perform electro-mechanical conversion. The surface acoustic wave element has a larger electro-mechanical coupling coefficient and a higher surface acoustic wave propagation velocity than does a conventional surface acoustic wave element having no silicon dioxide layer, thereby obtaining a surface acoustic wave element that can operate in a high-frequency range. In particular, the electro-mechanical coupling coefficient is increased. The SiO.sub.2 layer is an electric insulator and rarely reacts with moisture or acids. The SiO.sub.2 layer protects the piezoelectric layer and the electrodes from effects of the external environment, thereby providing a surface acoustic wave element having good high-frequency characteristics and a high resistance to adverse environments.
摘要翻译： 表面声波元件包括含有基本上由金刚石和类金刚石碳膜中的至少一种组成的组成成分的硬质层，形成在硬质层上的压电层，形成在压电层上的二氧化硅（SiO 2）层 和与压电层结合的电极进行机电转换。 表面声波元件比没有二氧化硅层的常规表面声波元件具有更大的机电耦合系数和更高的表面声波传播速度，从而获得可以在高频下工作的表面声波元件 范围。 特别地，机电耦合系数增加。 SiO2层是电绝缘体，很少与水分或酸反应。 SiO 2层保护压电层和电极免受外部环境的影响，从而提供具有良好的高频特性和对不利环境的高抗性的表面声波元件。
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公开(公告)号：US5344526A
公开(公告)日：1994-09-06
申请号：US123061
申请日：1993-09-16
IPC分类号： C23F4/00 , B81C99/00 , C04B41/53 , C04B41/91 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22
CPC分类号： H01L21/3065 , B81C1/00531 , C04B41/5338 , C04B41/5346 , C04B41/91 , B81B2201/035 , B81C2201/0132
摘要： A diamond surface is selectively etched by forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, in which a concentration of oxygen in terms of O.sub.2 is from 0.01 to 20% based on the whole volume of the mixture.
摘要翻译： 通过在金刚石的表面上形成掩模来选择性地蚀刻金刚石表面，并且用含氧气体和惰性气体的混合物蚀刻金刚石表面，其中以O 2计的氧浓度为0.01至20％ 基于混合物的总体积。
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公开(公告)号：US5343107A
公开(公告)日：1994-08-30
申请号：US117226
申请日：1993-09-03
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. In the surface acoustic wave element having the above structure, since the copper electrodes formed on the diamond layer consist of high-quality singlecrystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 在具有上述结构的表面声波元件中，由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。
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公开(公告)号：US5294858A
公开(公告)日：1994-03-15
申请号：US19136
申请日：1993-02-18
CPC分类号： H03H9/02582
摘要： Disclosed herein is a surface acoustic wave device employing diamond, which has an operation frequency in a range of several hundred MHz to several GHz, a high propagation velocity and a large electromechanical coefficient. This surface acoustic wave comprises a substrate, a diamond layer which is formed on the substrate, a ZnO layer which is formed on the diamond layer, and interdigital electrodes which are formed on the ZnO layer, and utilizes a second order mode of a surface acoustic wave which is excited in a structure satisfying (2.pi..H/.lambda.)=0.9 to 2.3 where H represents the thickness of the ZnO layer and .lambda. represents the wavelength of the surface acoustic wave. This surface acoustic wave device can be used in an extremely high frequency range, whereby the same is applicable to a resonator, a delay line, a signal processing device, a convolver, a correlator or the like in addition to a filter.
摘要翻译： 本发明公开了一种采用金刚石的弹性表面波器件，其工作频率范围为数百MHz至数GHz，传播速度高，机电系数大。 该表面声波包括衬底，形成在衬底上的金刚石层，形成在金刚石层上的ZnO层和形成在ZnO层上的叉指电极，并且利用表面声学的二阶模式 在满足（2（pi）·H /（λ））= 0.9〜2.3的结构中激发的波，其中H表示ZnO层的厚度，（λ）表示声表面波的波长。 该声表面波装置可以在极高的频率范围内使用，除了滤波器之外，其也适用于谐振器，延迟线，信号处理装置，卷积器，相关器等。
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公开(公告)号：US4859618A
公开(公告)日：1989-08-22
申请号：US122438
申请日：1987-11-19
申请人： Shinichi Shikata , Hideki Hayashi
发明人： Shinichi Shikata , Hideki Hayashi
IPC分类号： H01L21/027 , H01L21/285 , H01L21/338
CPC分类号： H01L29/66871 , H01L21/0272 , H01L21/28587
摘要： A method of forming a self-aligned gate electrode of a field effect transistor, in which a resist pattern is formed on a substrate by lithography, an ion-implanted layer in the substrate at the side of the resist is formed by ion implantation, an insulating film is formed on the substrate by electron cyclotron resonance plasma chemical vapor deposition, the resist pattern and a part of the insulating film on the resist pattern removed by lift-off to thereby form an insulating pattern with an opening, the substrate annealed to activate said ion-implanted layer and a gate electrode formed in the opening by a spacer lift-off method.
摘要翻译： 通过光刻法形成在基板上形成抗蚀剂图案的场效应晶体管的自对准栅电极的方法，通过离子注入形成在抗蚀剂一侧的基板中的离子注入层， 通过电子回旋共振等离子体化学气相沉积在基板上形成绝缘膜，通过剥离去除抗蚀剂图案和抗蚀剂图案上的绝缘膜的一部分，从而形成具有开口的绝缘图案，基板退火以激活 所述离子注入层和通过间隔物剥离法在开口中形成的栅电极。
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37.发明授权Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor device 有权肖特基金刚石半导体器件及用于金刚石半导体器件的肖特基电极的制造方法公开(公告)号：US08237170B2
公开(公告)日：2012-08-07
申请号：US12597578
申请日：2008-04-14
IPC分类号： H01L29/15
CPC分类号： H01L29/47 , C22C5/04 , H01L21/0435 , H01L29/1602 , H01L29/6603 , H01L29/872
摘要： To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
摘要翻译： 为了在金刚石半导体中提供肖特基电极，该金刚石半导体具有良好的金刚石粘合性，具有由于外部机械压力不均匀而不会剥离的接触表面，在二极管形成过程中不会导致产率降低 并且不会导致电流 - 电压特性的劣化，以及制造肖特基电极的方法。 一种肖特基电极，其包括：形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜，其中Pt族合金包含Pt为50〜99.9质量％，0.1〜50质量％ 包括：散射岛状图案金属薄膜，其形成在形成于基板上的金刚石表面上，并且包括选自Pt和Pd中的一种; 以及包括选自Ru，Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。
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38.发明申请FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME 审中-公开带有磷酸盐的N型（100）面向单晶金刚石半导体的薄膜及其制造方法公开(公告)号：US20120103250A1
公开(公告)日：2012-05-03
申请号：US13344104
申请日：2012-01-05
IPC分类号： C30B25/02
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。
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39.发明授权公开(公告)号：US06642813B1
公开(公告)日：2003-11-04
申请号：US10089816
申请日：2002-04-04
IPC分类号： H03H964
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.
摘要翻译： 具有金刚石的表面声波（SAW）器件，其具有高效率，并且可以在高频，特别是9.5至10.5GHz的频率下操作。 SAW器件包括单独形成或形成在衬底上的金刚石层，ZnO压电层，叉指式换能器（IDT）和根据需要的短路电极。 SAW器件具有其中ZnO层的厚度，SAW的谐波的波长和IDT的线宽落在特定范围内的结构。 利用这种结构，通过利用SAW的第三或第五谐波，在10GHz频带的高频范围内获得大的机电耦合系数。
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公开(公告)号：US5500077A
公开(公告)日：1996-03-19
申请号：US208169
申请日：1994-03-08
摘要： A method of flattening diamond, including: forming a flat coating comprising a material different from diamond, on a surface of diamond having unevenness; and removing the coating and the unevenness of the surface of diamond by dry etching under a condition such that both of the coating and the diamond can be etched, thereby to smooth the surface of the diamond.
摘要翻译： 一种使金刚石变平的方法，包括：在具有凹凸的金刚石的表面上形成包含不同于金刚石的材料的平坦涂层; 并且通过干蚀刻在可以蚀刻涂层和金刚石两者的条件下去除涂层和金刚石表面的不均匀性，从而使金刚石的表面光滑。
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