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公开(公告)号:US20070209697A1
公开(公告)日:2007-09-13
申请号:US11578063
申请日:2004-05-07
申请人: Shoichi Karakida , Hiroaki Morikawa
发明人: Shoichi Karakida , Hiroaki Morikawa
IPC分类号: H01L31/00
CPC分类号: H01L31/1804 , H01L31/022425 , H01L31/02363 , Y02E10/547 , Y02P70/521
摘要: When forming an electrode by printing several times, the cross section area of the electrode is increased and the resistance is reduced while more electrode material is required, which leads to a cost up and waste of resources. There is provided a solar cell manufacturing method for forming an electrode of a predetermined pattern by repeating printing on a substrate surface by a predetermined number of times. A mask pattern for printing the entire predetermined pattern is used at least once among the predetermined number of printings while mask patterns, each for printing a part of the predetermined pattern, are used in the other printings, thereby forming the electrode of the predetermined pattern.
摘要翻译: 当通过打印几次形成电极时,电极的横截面面积增加并且电阻降低,同时需要更多的电极材料,这导致成本增加和浪费资源。 提供一种用于通过在基板表面上重复打印预定次数来形成预定图案的电极的太阳能电池制造方法。 用于打印整个预定图案的掩模图案在预定数量的打印中至少使用一次,而在其他打印中使用用于打印预定图案的一部分的掩模图案,从而形成预定图案的电极。
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公开(公告)号:US20070017754A1
公开(公告)日:2007-01-25
申请号:US11540594
申请日:2006-10-02
IPC分类号: B60T3/00
CPC分类号: B62H1/12 , B62H1/14 , B62K1/00 , B62K11/007
摘要: A chassis braking system for braking a chassis includes a braking unit including a braking surface biased toward a road surface on which the chassis runs and having a first state where movement of the braking surface toward the road surface is locked and a second state where the braking surface abuts against the road surface. A control unit releases the lock of the braking unit and shifts the braking unit from the first state to the second state when predetermined conditions are met.
摘要翻译: 用于制动底盘的底盘制动系统包括制动单元,该制动单元包括朝向底盘行进的路面偏置的制动表面,并且具有第一状态,其中制动表面朝向路面的移动被锁定,第二状态是制动 表面贴合路面。 当满足预定条件时,控制单元释放制动单元的锁定并将制动单元从第一状态转移到第二状态。
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公开(公告)号:US5510272A
公开(公告)日:1996-04-23
申请号:US352118
申请日:1994-12-01
申请人: Hiroaki Morikawa , Hisao Kumabe
发明人: Hiroaki Morikawa , Hisao Kumabe
IPC分类号: H01L31/04 , H01L31/0352 , H01L31/18
CPC分类号: H01L31/1892 , H01L31/035281 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521 , Y10S136/29 , Y10S148/125 , Y10S148/128 , Y10S148/135 , Y10S148/153 , Y10S438/958 , Y10S438/977
摘要: In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed. Furthermore, the passivation process can be performed to a plurality of solar cells having the thin semiconductor crystalline films and arranged in a module.
摘要翻译: 在制造太阳能电池的方法中,在下层基板上形成光电薄膜半导体结晶膜,在光电膜的整个膜厚方向上氢钝化,得到高效率的太阳能电池。 此外,由于在薄半导体结晶膜上形成后表面电极之前进行钝化处理,所以钝化处理不受背面电极的限制。 从而获得具有较高能量转换效率的太阳能电池。 通过将薄半导体晶体膜暴露于具有低加速能量,低于2KeV的氢离子环境或者等离子体环境来进行钝化处理。 因此,晶片表面的钝化处理的均匀性得到改善,可以有效地处理大面积晶片。 此外,可以对具有薄半导体晶体膜并且布置在模块中的多个太阳能电池执行钝化处理。
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公开(公告)号:US5441577A
公开(公告)日:1995-08-15
申请号:US261948
申请日:1994-06-17
申请人: Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
发明人: Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
IPC分类号: C23C14/56 , C23C16/24 , C23C16/50 , C23C16/54 , C30B25/02 , H01L31/0392 , H01L31/048 , H01L31/05 , H01L31/18
CPC分类号: C30B29/06 , C23C14/568 , C23C16/24 , C23C16/50 , C23C16/545 , C30B25/02 , H01L31/02366 , H01L31/03921 , H01L31/0463 , H01L31/048 , H01L31/0508 , H01L31/186 , H01L31/1876 , H01L31/1892 , Y02E10/50 , Y02P70/521 , Y10S148/122
摘要: A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semiconductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.
摘要翻译: 一种在石墨片基片上制造具有薄膜活性层的薄膜太阳能电池的方法包括以下步骤:将两片石墨粘在一起,在两片片材的第二主表面上形成用作活性层的半导体薄膜 石墨,并将两片石墨彼此分离。 在该结构中,由上片和半导体薄膜之间的膨胀系数差引起的应力由下片和半导体薄膜之间的膨胀系数差引起的应力消除。 因此,防止了基板的弯曲,从而容易进行随后的工艺步骤。 此外,每单位时间的产品数量翻了一番,从而提高了生产力。
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公开(公告)号:US5288338A
公开(公告)日:1994-02-22
申请号:US928747
申请日:1992-08-13
申请人: Hiroaki Morikawa
发明人: Hiroaki Morikawa
IPC分类号: H01L31/0747 , H01L31/075 , H01L31/18 , H01L31/06
CPC分类号: H01L31/075 , H01L31/03685 , H01L31/0747 , H01L31/1804 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要: A solar cell includes a first conductivity type silicon substrate, a second conductivity type layer of microcrystalline or amorphous silicon deposited on the substrate in a plasma process and consuming an oxide film no more than 2 nanometers thick formed on the substrate before depositing the second conductivity type layer, a transparent electrode layer disposed on the second conductivity type layer, a grid electrode disposed on the transparent electrode layer, and an electrode disposed on the substrate. A method for producing a solar cell includes forming a silicon oxide film on a first conductivity type silicon substrate to a thickness not exceeding 2 nanometers by immersing the substrate in heated nitric acid, depositing a second conductivity type layer of microcrystalline or amorphous silicon on the silicon oxide film in a plasma, the silicon oxide film being consumed during deposition of the second conductivity type layer, and forming respective electrodes on the substrate and the second conductivity type layer.
摘要翻译: 太阳能电池包括第一导电型硅衬底,在等离子体工艺中沉积在衬底上的第二导电类型的微晶或非晶硅层,并且在沉积第二导电类型之前消耗形成在衬底上的不超过2纳米厚的氧化膜 设置在第二导电类型层上的透明电极层,设置在透明电极层上的栅电极和设置在基板上的电极。 一种太阳能电池的制造方法,其特征在于,在所述第一导电型硅衬底上形成氧化硅膜,使其厚度不超过2纳米,将所述衬底浸渍在加热的硝酸中,在所述硅上沉积第二导电型微晶或非晶硅层 氧化膜在第二导电型层的沉积期间被消耗,并且在基板和第二导电类型层上形成各自的电极。
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公开(公告)号:US5273911A
公开(公告)日:1993-12-28
申请号:US846793
申请日:1992-03-05
申请人: Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
发明人: Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
IPC分类号: C23C14/56 , C23C16/24 , C23C16/50 , C23C16/54 , C30B25/02 , H01L31/0392 , H01L31/048 , H01L31/05 , H01L31/18 , H01L31/0368
CPC分类号: C30B29/06 , C23C14/568 , C23C16/24 , C23C16/50 , C23C16/545 , C30B25/02 , H01L31/02366 , H01L31/03921 , H01L31/0463 , H01L31/048 , H01L31/0508 , H01L31/186 , H01L31/1876 , H01L31/1892 , Y02E10/50 , Y02P70/521 , Y10S148/122
摘要: A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semi-conductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.
摘要翻译: 一种在石墨片基片上具有薄膜活性层的薄膜太阳能电池的制造方法,其特征在于,将两片石墨粘合在一起,形成作为活性层的半导体薄膜的工序 石墨片,并将两片石墨彼此分离。 在该结构中,由上片和半导体薄膜之间的膨胀系数差引起的应力由下片和半导体薄膜之间的膨胀系数差引起的应力消除。 因此,防止了基板的弯曲,从而容易地进行后续的工艺步骤。 此外,每单位时间的产品数量翻了一番,从而提高了生产力。
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公开(公告)号:US09235578B2
公开(公告)日:2016-01-12
申请号:US13473345
申请日:2012-05-16
申请人: Tatsuya Asai , Hiroaki Morikawa , Shinichiro Tago , Hiroya Inakoshi , Nobuhiro Yugami , Seishi Okamoto
发明人: Tatsuya Asai , Hiroaki Morikawa , Shinichiro Tago , Hiroya Inakoshi , Nobuhiro Yugami , Seishi Okamoto
CPC分类号: G06F17/30067 , G06F17/30286 , G06F17/30516
摘要: A data partitioning apparatus receives stream data and stores with previous-and-subsequent information that specifies data previous and subsequent to the data. Then, for groups, each of which contains the data that are stored and that are partitioned into the number of the groups, the data partitioning apparatus stores top information specifying data located at the top in a corresponding group and end information specifying data located at the end in the corresponding group. Then, when new data is stored, the data partitioning apparatus specifies data previous and subsequent to the new data and stores the new data by associating it with the previous-and-subsequent information that specifies the data previous and subsequent to the new data. Then, when data is inserted, the data partitioning apparatus updates information for each group such that the difference between the number of data belonging to each group is equal to or less than one.
摘要翻译: 数据分割装置接收流数据并且存储具有指定数据之前和之后的数据的先前和后续信息。 然后,对于每个包含存储的数据并且被划分为组的数量的组,数据分割装置存储指定位于相应组中的顶部的顶部信息,并且指定位于 在相应的组中结束。 然后,当存储新数据时,数据划分装置指定新数据之前和之后的数据,并通过将新数据与新数据之前和之后的数据指定的先前和后续信息相关联来存储新数据。 然后,当插入数据时,数据划分装置更新每个组的信息,使得属于每个组的数据的数量之间的差等于或小于1。
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公开(公告)号:US08012787B2
公开(公告)日:2011-09-06
申请号:US12989098
申请日:2008-04-30
IPC分类号: H01L21/00
CPC分类号: H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03529 , H01L31/068 , Y02E10/547
摘要: The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.
摘要翻译: 该制造方法包括:在光入射表面侧的整个表面上形成P型硅衬底和其中N型杂质以第一浓度扩散的高浓度N型扩散层; 在高浓度N型扩散层上形成耐腐蚀性膜,在蚀刻电阻膜的凹部形成区域内的规定位置形成细孔; 通过在所述细孔的形成位置周围蚀刻所述硅基板而形成凹部,以便不将所述高浓度N型扩散层留在所述凹部形成区域内; 在其上形成凹部的表面上形成其中N型杂质以低于第一浓度的第二浓度扩散的低浓度N型扩散层; 以及在所述硅衬底的光入射表面侧的电极形成区域中形成栅电极。
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公开(公告)号:US20090314343A1
公开(公告)日:2009-12-24
申请号:US12524082
申请日:2008-02-26
IPC分类号: H01L31/0216 , H01L31/18
CPC分类号: H01L31/0236 , H01L31/02168 , H01L31/02363 , H01L31/048 , Y02E10/50
摘要: Provided is a photovoltaic (PV) module by which electric power generation efficiency can be improved by improving light use rate. An encapsulant (202) is permitted to be a first layer (A cover glass (201) and the encapsulant (202) are considered optically equivalent, since their refractive indexes are substantially the same), a light trapping film (300) to be a second layer, an anti-reflective layer (104) to be a third layer, and an n-type layer (103) to be a fourth layer. When the reflective indexes of the layers are expressed as first reflective index (n1), second reflective index (n2), third reflective index (n3) and fourth reflective index (n4), relationship n1≦n2≦n3≦n4 is satisfied. The light trapping film (300) of the second layer, i.e., one layer among the light transmitting layers, has a structured shape on an incident side (300a) where incident light (205) enters.
摘要翻译: 提供了通过提高光利用率可以提高发电效率的光伏(PV)模块。 允许密封剂(202)为第一层(盖玻璃(201),并且密封剂(202)被认为是光学等效的,因为它们的折射率基本上相同),光捕获膜(300)为 第二层,作为第三层的抗反射层(104)和作为第四层的n型层(103)。 当这些层的反射指数被表示为第一反射指数(n1),第二反射指数(n2),第三反射指数(n3)和第四反射指数(n4)时,关系n1 <= n2 <= n3 <= n4 满意。 第二层的光捕获膜(300),即透光层中的一层,在入射光(205)入射的入射侧(300a)上具有结构形状。
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公开(公告)号:US20090214796A1
公开(公告)日:2009-08-27
申请号:US11916829
申请日:2006-06-09
申请人: Kaoru Okaniwa , Kouichi Abe , Haruaki Sakurai , Hiroaki Morikawa
发明人: Kaoru Okaniwa , Kouichi Abe , Haruaki Sakurai , Hiroaki Morikawa
IPC分类号: B05D3/00
CPC分类号: G02B1/113
摘要: The invention provides a method for forming antireflection films comprising a step that simultaneously accomplishes sintering of a coating film containing an antireflection film precursor formed on the surface of a glass body, and tempering of the glass body. It is thereby possible to form antireflection films at satisfactorily low cost.
摘要翻译: 本发明提供一种形成抗反射膜的方法,其包括同时完成含有形成在玻璃体表面上的抗反射膜前体的涂膜和玻璃体的回火的步骤的步骤。 从而可以以令人满意的低成本形成抗反射膜。
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