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60 条记录 (耗时 0.01 秒)

    Imaging device having two anti-reflection layers on a surface of silicon wafer
    33.
    发明授权
    Imaging device having two anti-reflection layers on a surface of silicon wafer 失效
    成像装置在硅晶片的表面上具有两个防反射层

    公开(公告)号：US4689873A

    公开(公告)日：1987-09-01

    申请号：US769742

    申请日：1985-08-27

    申请人： William M. Kramer

    发明人： William M. Kramer

    IPC分类号： H01J29/45 ,  H01L31/0216 ,  H01L27/14 ,  H01L31/18

    CPC分类号： H01J29/455 ,  H01L31/02161 ,  Y10S148/172

    摘要： An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

    摘要翻译： 诸如硅摄像机的成像装置具有具有输入感测区域和电荷存储区域的单晶半导体材料晶片。 输入感测区域内包含一个势垒，用于控制起霜。 钝化区域也包括在输入感测区域内以稳定沿着晶片的第一表面的原子能级。 在晶片的第一表面上依次沉积硫化锌的防反射层和氟化镁或碳黑的抗反射层。 两个防反射层形成了抗反射区域，其增强了器件在400至500纳米的波长范围内的量子效率。 每个层的光学厚度基本上等于入射到设备上的光的波长的四分之一。 还公开了形成抗反射区域的方法。

    Low cost reduced blooming device and method for making the same
    34.
    发明授权
    Low cost reduced blooming device and method for making the same 失效
    低成本降低开花装置及其制作方法

    公开(公告)号：US4329702A

    公开(公告)日：1982-05-11

    申请号：US143026

    申请日：1980-04-23

    申请人： Lloyd F. Wallace

    发明人： Lloyd F. Wallace

    IPC分类号： H01J29/45 ,  H01L27/14

    CPC分类号： H01J29/455 ,  Y10S257/917

    摘要： An image sensing device includes a wafer having a first input sensing surface region and a second charge storage surface region. A recombination layer extends along the first surface and is spaced therefrom. The method for forming the recombination layer is also disclosed.

    摘要翻译： 图像感测装置包括具有第一输入感测表面区域和第二电荷存储表面区域的晶片。 复合层沿着第一表面延伸并与之隔开。 还公开了形成复合层的方法。

    Reduced blooming device having enhanced quantum efficiency
    35.
    发明授权
    Reduced blooming device having enhanced quantum efficiency 失效
    具有增强的量子效率的减少的起霜装置

    公开(公告)号：US4228446A

    公开(公告)日：1980-10-14

    申请号：US37832

    申请日：1979-05-10

    申请人： William M. Kramer

    发明人： William M. Kramer

    IPC分类号： H01J29/45 ,  H01L27/146 ,  H01L31/0216 ,  H01L27/14

    CPC分类号： H01J29/455 ,  H01L27/14654 ,  H01L31/02161

    摘要： An imaging device such as silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included for controlling the blooming within the sensing region, and a passivation layer is provided for stabilizing the blooming characteristics. A coating, preferably zirconium oxide, is deposited on the passivation layer to combine with the passivation layer to form an anti-reflection region for enhancing the quantum efficiency of the device. The anti-reflection region has an optical thickness substantially equal to an odd multiple of a quarter of a wavelength of light incident on the device.

    摘要翻译： 诸如硅摄像机的成像装置具有具有输入感测区域和电荷存储区域的单晶半导体材料晶片。 包括用于控制感测区域内的起霜的势垒，并且提供钝化层以稳定起霜特性。 在钝化层上沉积涂层，优选氧化锆，以与钝化层组合形成用于增强器件的量子效率的抗反射区域。 抗反射区域的光学厚度基本上等于入射到器件上的光的波长的四分之一的奇数倍。

    Target structure for a vidicon tube and methods of producing the same
    37.
    发明授权
    Target structure for a vidicon tube and methods of producing the same 失效
    一种VIDICON管的目标结构及其生产方法

    公开(公告)号：US3707657A

    公开(公告)日：1972-12-26

    申请号：US3707657D

    申请日：1970-12-02

    申请人： SIEMENS AG

    发明人： VEITH WERNER

    IPC分类号： H01J29/45 ,  H01L21/00 ,  H01L21/308 ,  H01L23/29 ,  H01L27/00 ,  H01L15/00

    CPC分类号： H01L23/291 ,  H01J9/233 ,  H01J29/455 ,  H01L21/00 ,  H01L21/308 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A vidicon tube target structure wherein a n-conductive signal plate has a target surface thereof provided with a p-conductive layer and an array of fine grooves extend from this layer downwardly beyond the p-conductive layer into the signal plate to define an array of mesa-like p-conducitve land areas. The peripheral groove walls are coated with an insulator material while the land areas are coated with a conductive metal. The grooves and lands are configured to provide an increased amount of utilizable effective target surface area for a scanning electron beam.

    摘要翻译： 一种视频管目标结构，其中n导电信号板的目标表面设置有p导电层，并且细槽的阵列从该层向下延伸超过p导电层进入信号板以限定阵列 类似台地的地区。 周边槽壁涂覆有绝缘材料，而陆地区域则涂覆有导电金属。 凹槽和平台被配置为为扫描电子束提供增加的可利用的有效目标表面积。