公开(公告)号：US08604449B2

公开(公告)日：2013-12-10

申请号：US13160573

申请日：2011-06-15

Applicant: Piotr R. Lubicki ,  Bon-Woong Koo

Inventor： Piotr R. Lubicki ,  Bon-Woong Koo

IPC: G21G5/00

CPC classification number: H01J37/241 ,  H01J37/243 ,  H01J37/248 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/0206 ,  H01J2237/24535

Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.

Abstract translation: 公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。 这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。 通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。 例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。

公开(公告)号：US08604411B2

公开(公告)日：2013-12-10

申请号：US13295252

申请日：2011-11-14

Applicant: Marco Jan-Jaco Wieland ,  Remco Jager ,  Alexander Hendrik Vincent Van Veen ,  Stijn Willem Herman Karel Steenbrink ,  Teunis van de Peut ,  Henk Derks

Inventor： Marco Jan-Jaco Wieland ,  Remco Jager ,  Alexander Hendrik Vincent Van Veen ,  Stijn Willem Herman Karel Steenbrink ,  Teunis van de Peut ,  Henk Derks

IPC: H01J37/147 ,  G21K5/00

CPC classification number: H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/241 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/2482

Abstract: The invention relates to a charged particle lithography system comprising a beam generator for generating a plurality of charged particle beamlets, a beam stop array and a modulation device. The beam stop array has a surface for blocking beamlets from reaching a target surface and an aperture array in the surface for allowing beamlets to reach the target surface. The modulation device is arranged for modulating the beamlets by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. A surface area of the modulation device comprises an elongated beam area comprising an array of apertures and associated modulators, and a power interface area for accommodating a power arrangement for powering elements within the modulation device. The power interface area is located alongside a long side of the elongated beam area and extending in a direction substantially parallel thereto.

Abstract translation: 本发明涉及一种带电粒子光刻系统，其包括用于产生多个带电粒子子束的束发生器，束阻止阵列和调制装置。 光束停止阵列具有用于阻挡子束到达目标表面的表面和表面中的孔径阵列，以允许子束到达目标表面。 调制装置被布置用于通过偏转或不偏转子束来调制子束，使得子束被阻挡或不被阻挡阵列阻挡。 调制装置的表面区域包括细长的波束区域，其包括孔阵列和相关联的调制器，以及用于容纳为调制装置内的元件供电的功率装置的电源接口区域。 电源接口区域位于细长波束区域的长边旁边并沿与其大致平行的方向延伸。

公开(公告)号：US08492978B2

公开(公告)日：2013-07-23

申请号：US12873979

申请日：2010-09-01

Applicant: Richard Brownell True

Inventor： Richard Brownell True

IPC: H01J7/44

CPC classification number: H01J37/063 ,  H01J37/241 ,  H01J37/243 ,  H01J2237/063

Abstract: The invention provides an apparatus and method of switching more than one bias voltage within an electron beam tube in order to achieve electron beam cutoff. The invention is particularly useful for high-perveance electron tubes in which a large change in focus-electrode-to-cathode or anode-cathode voltage might otherwise be needed to achieve cutoff. In one embodiment of the invention, the cathode and anode bias voltages are both switched by magnitudes well within the capabilities of standard high-voltage switches to achieve beam cutoff.

Abstract translation: 本发明提供了一种在电子束管内切换多于一个偏置电压以便实现电子束切断的装置和方法。 本发明对于其中可能需要聚焦 - 电极 - 阴极或阳极 - 阴极电压的大的变化以实现截止的高电位电子管特别有用。 在本发明的一个实施例中，阴极和阳极偏置电压都在标准高压开关的能力范围内很好地切换，以实现光束截止。

公开(公告)号：US20120168645A1

公开(公告)日：2012-07-05

申请号：US12984305

申请日：2011-01-04

Applicant: Daniella Atzmony ,  Eran Ben-Shmuel ,  Steven Robert Rogers ,  Amichai Ron ,  Daniel Selinger ,  Eyal Torres

Inventor： Daniella Atzmony ,  Eran Ben-Shmuel ,  Steven Robert Rogers ,  Amichai Ron ,  Daniel Selinger ,  Eyal Torres

IPC: G21K5/00 ,  H05B6/68

CPC classification number: H01J37/241 ,  H02J17/00 ,  H02J50/12 ,  H02J50/20 ,  H02J50/30 ,  H02J50/80 ,  H02J50/90 ,  H05B6/6441 ,  H05B6/68 ,  H05B6/687 ,  H05B6/701 ,  H05B6/705 ,  Y02B40/143 ,  Y02B40/146

Abstract: Apparatuses, methods, kits, and systems relating to applying electromagnetic energy to an object located at least partially in an energy application zone are disclosed. Some apparatuses may include a processor configured to determine a preliminary amount of energy to be dissipated in the object and determine a corrected amount of energy based on the preliminary amount of energy and calibration information. The processor may be further configured to cause a source to transfer energy to the energy application zone and determine an amount of delivered energy, based on an amount of energy returned from the energy application zone and an amount of energy supplied to the energy application zone. The processor may also be configured to cause the source to transfer energy to the energy application zone at least until the amount of delivered energy equals the corrected amount of energy.

Abstract translation: 公开了将至少部分地位于能量施加区域中的物体施加电磁能量的装置，方法，试剂盒和系统。 一些设备可以包括处理器，其被配置为基于初始的能量量和校准信息来确定待散射的物体的初始耗散量并确定校正的能量量。 处理器可以被进一步配置成基于从能量施加区返回的能量的量和提供给能量施加区的能量的量，使源将能量传递到能量施加区并确定所递送能量的量。 处理器还可以被配置成使得源至少能够传递到能量施加区域，直到传送的能量等于校正的能量量。

公开(公告)号：US08034640B2

公开(公告)日：2011-10-11

申请号：US12627222

申请日：2009-11-30

Applicant: Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

Inventor： Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

IPC: G01R31/26 ,  H01L21/66

CPC classification number: H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

Abstract: An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.

Abstract translation: 一种用于检查半导体器件的缺陷的装置和方法。 由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。 从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。 由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像 在下层。 为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。 因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。 关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。 当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

公开(公告)号：US20090200484A1

公开(公告)日：2009-08-13

申请号：US12366390

申请日：2009-02-05

Applicant: Juergen FROSIEN

Inventor： Juergen FROSIEN

IPC: H01J3/14

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/241 ,  H01J37/243 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/0827 ,  H01J2237/28 ,  H01J2237/317

Abstract: A focused ion beam device is described. The focused ion beam device includes an ion beam column including an enclosure for housing a gas field ion source emitter with an emitter area for generating ions, an electrode for extracting ions from the gas field ion source emitter, one or more gas inlets adapted to introduce a first gas and a second gas to the emitter area, an objective lens for focusing the ion beam generated from the first gas or the second gas, a voltage supply for providing a voltage between the electrode and the gas field ion source emitter, and a controller for switching between a first voltage and a second voltage of the voltage supply for generating an ion beam of ions of the first gas or an ion beam of ions of the second gas.

Abstract translation: 描述了聚焦离子束装置。 聚焦离子束装置包括离子束柱，其包括用于容纳具有用于产生离子的发射极区域的气体场离子源发射器的外壳，用于从气体离子源发射器提取离子的电极，适于引入离子源的一个或多个气体入口 将第一气体和第二气体输送到发射器区域，用于聚焦由第一气体或第二气体产生的离子束的物镜，用于在电极和气体离子源发射器之间提供电压的电压源，以及 控制器，用于在电压源的第一电压和第二电压之间切换，用于产生第一气体的离子离子束或第二气体的离子离子束。

公开(公告)号：US20080017319A1

公开(公告)日：2008-01-24

申请号：US11825136

申请日：2007-07-02

Applicant: John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

Inventor： John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

IPC: H01J27/02

CPC classification number: H01J37/32183 ,  H01J27/16 ,  H01J37/08 ,  H01J37/241 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32669 ,  H01J2237/0815

Abstract: The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Abstract translation: 本发明提供了一种电感耦合磁增强型离子束源，适用于与探针形成光学器件结合使用以产生离子束而不产生由该源引起的动能振荡。

公开(公告)号：US07274017B2

公开(公告)日：2007-09-25

申请号：US11137445

申请日：2005-05-26

Applicant: Akimitsu Okura ,  Masashi Kimura ,  Kenichi Hirane ,  Yoshihiko Nakayama

Inventor： Akimitsu Okura ,  Masashi Kimura ,  Kenichi Hirane ,  Yoshihiko Nakayama

IPC: H01J37/00

CPC classification number: H01J37/241 ,  H01J2237/0206

Abstract: Disclosed is an electron beam apparatus and method which can retain the state that minimizes the amount of water content contained at a gap between a high-voltage cable and a high-voltage introduction insulator to thereby prevent creation of high-voltage discharge and current leakage. The apparatus comprises a means for applying a high voltage to an acceleration electrode while eliminating electron release from an electron source and for detecting a change in an emission current corresponding to a change in an acceleration voltage at this time. In addition, the apparatus comprises a means for issuing a cautionary notice or warning when the change of this emission current exceeds a prespecified value. Further, the apparatus comprises a means for letting a dry gas flow in a gap portion between the electron gun's high-voltage cable and the high-voltage introduction insulator to thereby dehumidify said gap portion. With such an arrangement, it is possible to prevent high-voltage discharge due to an increase in water content of the gap portion and also instability of an electron beam due to a leakage current.

Abstract translation: 公开了一种电子束装置和方法，其可以保持使高压电缆和高压引入绝缘体之间的间隙中含有的含水量最小化的状态，从而防止高压放电和电流泄漏的产生。 该装置包括用于向加速电极施加高电压同时消除电子从电子源的释放并且用于检测与此时加速电压的变化相对应的发射电流的变化的装置。 此外，该装置包括当该发射电流的变化超过预定值时发出警告通知或警告的装置。 此外，该装置包括用于使干燥气体在电子枪的高压电缆和高压引入绝缘体之间的间隙部分中流动从而对所述间隙部分进行除湿的装置。 通过这样的布置，可以防止由于间隙部分的水分含量增加引起的高压放电以及由于漏电流引起的电子束的不稳定性。

公开(公告)号：US07241361B2

公开(公告)日：2007-07-10

申请号：US10988745

申请日：2004-11-13

Applicant: John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

Inventor： John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

IPC: H01J49/10 ,  H01J27/02

CPC classification number: H01J37/32183 ,  H01J27/16 ,  H01J37/08 ,  H01J37/241 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32669 ,  H01J2237/0815

Abstract: The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Abstract translation: 本发明提供了一种电感耦合磁增强型离子束源，适用于与探针形成光学器件结合使用以产生离子束而不产生由该源引起的动能振荡。

公开(公告)号：US06949752B2

公开(公告)日：2005-09-27

申请号：US10295951

申请日：2002-11-18

Applicant: Akimitsu Okura ,  Masashi Kimura ,  Kenichi Hirane ,  Yoshihiko Nakayama

Inventor： Akimitsu Okura ,  Masashi Kimura ,  Kenichi Hirane ,  Yoshihiko Nakayama

IPC: H01J37/06 ,  G09G1/04 ,  H01J37/065 ,  H01J37/24 ,  H01J37/248 ,  H01L21/027 ,  H05B39/04

CPC classification number: H01J37/241 ,  H01J2237/0206

Abstract: Disclosed is an electron beam apparatus and method which can retain the state that minimizes the amount of water content contained at a gap between a high-voltage cable and a high-voltage introduction insulator to thereby prevent creation of high-voltage discharge and current leakage. The apparatus comprises a means for applying a high voltage to an acceleration electrode while eliminating electron release from an electron source and for detecting a change in an emission current corresponding to a change in an acceleration voltage at this time. In addition, the apparatus comprises a means for issuing a cautionary notice or warning when the change of this emission current exceeds a prespecified value. Further, the apparatus comprises a means for letting a dry gas flow in a gap portion between the electron gun's high-voltage cable and the high-voltage introduction insulator to thereby dehumidify said gap portion. With such an arrangement, it is possible to prevent high-voltage discharge due to an increase in water content of the gap portion and also instability of an electron beam due to a leakage current.

Abstract translation: 公开了一种电子束装置和方法，其可以保持使高压电缆和高压引入绝缘体之间的间隙中含有的含水量最小化的状态，从而防止高压放电和电流泄漏的产生。 该装置包括用于向加速电极施加高电压同时消除电子从电子源的释放并且用于检测与此时加速电压的变化相对应的发射电流的变化的装置。 此外，该装置包括当该发射电流的变化超过预定值时发出警告通知或警告的装置。 此外，该装置包括用于使干燥气体在电子枪的高压电缆和高压引入绝缘体之间的间隙部分中流动从而对所述间隙部分进行除湿的装置。 通过这样的布置，可以防止由于间隙部分的水分含量增加引起的高压放电以及由于漏电流引起的电子束的不稳定性。