公开(公告)号：US20150243488A1

公开(公告)日：2015-08-27

申请号：US14630859

申请日：2015-02-25

申请人： COVALENT MATERIALS CORPORATION

发明人： Masahiro KUBOTA ,  Takaaki SHIMA

IPC分类号： H01J37/32

CPC分类号： H01J37/32642

摘要： There is provided a focus ring formed without an adhesive that can suppress abnormal electric discharge and obtain uniform plasma environment in a circumferential direction in a plasma processing apparatus. The focus ring includes a plurality of arc-shaped members and a plurality of connecting members connecting the plurality of the arc-shaped members to form a ring shape without an adhesive, and is formed such that a thickness between an upper surface of the connecting member and a bottom surface of a concave fitting portion of the connecting member is greater than a thickness between an upper surface of the arc-shaped member and a bottom surface of a second depression of the arc-shaped member.

摘要翻译： 在等离子体处理装置中，设置有能够抑制异常放电并且在圆周方向上获得均匀等离子体环境的无粘合剂的聚焦环。 聚焦环包括多个弧形构件和多个连接构件，多个连接构件连接多个弧形构件以形成没有粘合剂的环形，并且形成为使得连接构件的上表面之间的厚度 并且连接构件的凹入配合部的底面大于弧形构件的上表面与弧形构件的第二凹部的底面之间的厚度。

公开(公告)号：US20150206722A1

公开(公告)日：2015-07-23

申请号：US14408380

申请日：2013-07-02

申请人： Tokyo Electron Limited

发明人： Takashi Yamamoto

IPC分类号： H01J37/32

CPC分类号： H01J37/32559 ,  C23C4/10 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833

摘要： A lower electrode 2 includes a conductive base member 2a to which a high frequency power is applied; an electrostatic chuck 6, having an insulating layer 6b formed on a top surface of the base member 2a to cover an electrode 6a, configured to electrostatically attract a semiconductor wafer W as a target of a plasma process onto the insulating layer 6b; a focus ring 5 provided on a top surface of the insulating layer 6b of the electrostatic chuck 6 to surround the semiconductor wafer W; and a thermally sprayed film 100, which is conductive and formed on a portion of the insulating layer 6b of the electrostatic chuck 6 positioned between the focus ring 5 and the base member 2a by using a composite material in which titania is added to an insulating material for the insulating layer at a preset weight ratio.

摘要翻译： 下电极2包括施加高频电力的导电性基体2a， 静电吸盘6，其具有形成在基体部件2a的顶表面上以覆盖电极6a的绝缘层6b，该绝缘层被构造为将作为等离子体处理的靶的半导体晶片W静电吸引到绝缘层6b上; 设置在静电卡盘6的绝缘层6b的上表面上以围绕半导体晶片W的聚焦环5; 以及通过使用将二氧化钛添加到绝缘材料的复合材料形成在静电卡盘6的绝缘层6b的位于聚焦环5和基底部件2a之间的部分上的热喷涂膜100 对于绝缘层，以预设的重量比。

公开(公告)号：US09082839B2

公开(公告)日：2015-07-14

申请号：US14201409

申请日：2014-03-07

申请人： Plasma-Therm LLC

发明人： Rich Gauldin ,  Dwarakanath Geerpuram ,  Ken Mackenzie ,  Thierry Lazerand ,  David Pays-Volard ,  Linnell Martinez ,  Russell Westerman ,  Gordon M. Grivna ,  Jason Doub

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/00 ,  H01L21/78 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01J37/32 ,  H01L21/66

CPC分类号： H01L21/6835 ,  H01J37/32 ,  H01J37/32357 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32651 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6836 ,  H01L21/68735 ,  H01L21/78 ,  H01L22/30 ,  H01L2221/68327

摘要： The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

公开(公告)号：US09070536B2

公开(公告)日：2015-06-30

申请号：US13632306

申请日：2012-10-01

申请人： APPLIED MATERIALS, INC.

发明人： Michael D. Willwerth ,  David Palagashvili ,  Michael G. Chafin ,  Ying-Sheng Lin

IPC分类号： B23K9/02 ,  H01J37/32

CPC分类号： H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724

摘要： Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.

摘要翻译： 通过将工艺环与静电卡盘的绝缘圆盘热隔离，并且提供与半导体工艺环和下面的金属基座接触的导热和电绝缘的热环来防止半导体工艺环的不希望的加热，其具有内部冷却剂流动通道 。

公开(公告)号：US20150181684A1

公开(公告)日：2015-06-25

申请号：US14543316

申请日：2014-11-17

申请人： Applied Materials, Inc.

发明人： Samer BANNA ,  Vladimir KNYAZIK ,  Kyle TANTIWONG

IPC分类号： H05H1/24 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H05H1/24 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32642 ,  H01J37/32697 ,  H01L21/6875

摘要： Embodiments of the present disclosure provide apparatus and methods for improving plasma uniformity around edge regions and/or reducing non-symmetry in a plasma processing chamber. One embodiment of the present disclosure provides a plasma tuning assembly having one or more conductive bodies disposed around an edge region of a substrate support in a plasma processing chamber. The one or more conductive bodies are isolated from other chamber components and electrically floating in the processing chamber near the edge region without connecting to active electrical potentials. During operation, when a plasma is maintained in the plasma processing chamber, the presence of the one or more conductive bodies affects the plasma distribution near the one or more conductive bodies.

摘要翻译： 本公开的实施例提供了用于改善边缘区域周围的等离子体均匀性和/或降低等离子体处理室中的非对称性的装置和方法。 本公开的一个实施例提供了等离子体调谐组件，其具有设置在等离子体处理室中的衬底支撑件的边缘区域周围的一个或多个导电体。 一个或多个导电体与其它腔室部件隔离，并且在边缘区域附近电处理室中浮动，而不会连接到有源电位。 在操作期间，当在等离子体处理室中维持等离子体时，一个或多个导电体的存在影响一个或多个导电体附近的等离子体分布。

公开(公告)号：US20150118859A1

公开(公告)日：2015-04-30

申请号：US14521737

申请日：2014-10-23

申请人： Tokyo Electron Limited

发明人： Masaru NISHINO ,  Takao FUNAKUBO ,  Shinichi KOZUKA ,  Ryosuke NIITSUMA ,  Tsutomu ITO

IPC分类号： H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/31116

摘要： A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.

摘要翻译： 可以有效地除去含金属的沉积物。 等离子体处理方法包括通过包含C x F y气体的处理气体的等离子体去除沉积物，其沉积在处理容器内并且包含过渡金属和贱金属中的至少一种，其中x是等于 小于2，y为6以下的整数，不含有氯系气体和氮系气体。

公开(公告)号：US20150107773A1

公开(公告)日：2015-04-23

申请号：US14519688

申请日：2014-10-21

申请人： TOKYO ELECTRON LIMITED

发明人： Masayuki SHINTAKU ,  Takashi SUZUKI ,  Masahiko KONNO ,  Michitaka AITA ,  Taizo OKADA ,  Hideo KATO

IPC分类号： H01J37/32

CPC分类号： H01J37/32642 ,  H01J37/32192 ,  H01J37/32275

摘要： A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.

摘要翻译： 一种用于通过微波激发处理气体的等离子体处理装置，包括以环形形状延伸的聚焦环，围绕中心轴缠绕的第一管状部件沿着聚焦环下方的下部电极的外周延伸，环状 由设置在聚焦环和第一管状构件之间的介电材料制成的构件，沿着第一管状构件的外周延伸的第二管状构件和抑制经由聚焦环传播通过第一管状构件的微波的扼流圈， 会员。 并且所述扼流部从所述第一管状部件的外周沿所述第一管状体的直径方向向外突出，并且沿着所述第一管状部件的周缘呈环状延伸，所述扼流部被所述第二管状部件覆盖。

公开(公告)号：US09011637B2

公开(公告)日：2015-04-21

申请号：US13106441

申请日：2011-05-12

申请人： Takashi Yamamoto

发明人： Takashi Yamamoto

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01J37/32642 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/68742

摘要： A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base material, and can improve yield and productivity. The plasma processing apparatus includes a processing chamber, a lower electrode, an upper electrode, and a plurality of lifter pins for supporting a substrate to be processed. Each of the lifter pins includes a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part. The lower electrode includes through-holes for lifter pins each of which includes a pin body receiving part, which has an inner diameter less than the outer diameter of the lid part and receives the pin body part, and a lid receiving part, which is formed in an upper portion of the pin body receiving part and receives the cover portion, and in which the lifter pins are disposed. In a state where the lifter pins are lowered, the lid part is received in the lid receiving part, and the upper portion of the pin body receiving part is blocked by the lid part.

摘要翻译： 一种等离子体处理装置和半导体装置的制造方法，其能够防止在诸如半导体晶片等的基板之间发生放电，以及下部电极的基材或基材的周边结构，并且可以 提高产量和生产率。 等离子体处理装置包括处理室，下电极，上电极和用于支撑待处理基板的多个提升销。 每个升降销包括销主体部分和盖部分，其设置在销主体部分的顶部上并且具有大于销主体部分的外径的外径。 下电极包括用于升降销的通孔，每个销孔都包括一个销体接收部分，该销体的内径小于该盖部分的外径，并且容纳该销主体部分，以及一盖形成部分 在销体接收部分的上部并且接收盖部分，并且其中设置有提升销。 在提升销下降的状态下，盖部被容纳在盖容纳部中，并且销体容纳部的上部被盖部封闭。

公开(公告)号：US08988848B2

公开(公告)日：2015-03-24

申请号：US13651351

申请日：2012-10-12

申请人： Applied Materials, Inc.

发明人： Valentin Todorow ,  Samer Banna ,  Imad Yousif ,  Albert Wang ,  Gary Leray

IPC分类号： H01L21/683 ,  H02N13/00 ,  H01J37/32

CPC分类号： H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.

摘要翻译： 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的设备可以包括衬底支撑件，其包括设置在衬底支撑件内并且具有周边边缘和第一表面的第一电极; 设置在第一电极的第一表面上方的衬底支撑表面; 以及第二电极，其设置在所述基板支撑件内并且径向延伸超过所述第一电极的周边边缘，其中所述第二电极具有设置在所述第一电极的第一表面周围和上方的第二表面。

公开(公告)号：US20150075566A1

公开(公告)日：2015-03-19

申请号：US14387654

申请日：2012-11-07

申请人： TOKYO ELECTRON LIMITED

发明人： Takehiro Tanikawa ,  Kazuki Moyama

IPC分类号： H01L21/683 ,  H01J37/32

CPC分类号： H01L21/6831 ,  C23C16/4401 ,  H01J37/32192 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32137 ,  Y10T29/49998

摘要： A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck.

摘要翻译： 控制微粒对待处理基板的粘附的方法包括：在待处理基板被携带到处理容器之前，将电压施加到静电卡盘，静电卡盘构造成在加工容器中静电吸引待处理的基板; 并且在向静电卡盘施加电压之后，将要处理的基板运送到处理容器中。 此外，在向静电卡盘施加电压时，向静电卡盘施加电压以减小聚焦环和待处理基板之间的电位差，聚焦环设置成围绕静电卡盘。