公开(公告)号：US12094698B2

公开(公告)日：2024-09-17

申请号：US18317009

申请日：2023-05-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hsi Wang ,  Kun-Che Ho ,  Yen-Yu Chen

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3455 ,  C23C14/3407 ,  C23C14/3442 ,  C23C14/351 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/3461 ,  H01L21/02631

Abstract: A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.

公开(公告)号：US20230178347A1

公开(公告)日：2023-06-08

申请号：US17997975

申请日：2021-07-08

Applicant: ZHEJIANG CRYSTAL-OPTECH CO., LTD.

Inventor： Yanzhi WANG ,  Yonghui WU ,  Ren LU ,  Ruizhi ZHANG ,  Jun YAO ,  Jinlong CHEN ,  Lijian JIN ,  Fenglei LIU ,  Jian TANG

IPC: H01J37/34 ,  H01J37/32 ,  G02B5/20 ,  G02B5/28 ,  C03C17/36

CPC classification number: H01J37/3414 ,  H01J37/32449 ,  G02B5/207 ,  G02B5/281 ,  C03C17/3657 ,  C03C17/3649 ,  H01J2237/332 ,  C03C2217/259 ,  C03C2217/258 ,  C03C2217/268 ,  C03C2217/28 ,  C03C2218/155

Abstract: The present application provides a preparation method of a hydrogenated composite film and an optical filter, and relates to the field of optical film filter technologies. The preparation method includes: introducing inert gas and hydrogen into a reaction chamber, and bombarding at least two materials in the reaction chamber and the introduced hydrogen using plasma formed by the inert gas, such that the at least two materials are sputtered onto a substrate and react with hydrogen ions generated by the hydrogen to form a hydrogenated composite film layer. The hydrogenated composite film layer includes at least two materials which are co-sputtered onto the same substrate using the sputtering technology to obtain a required material performance, so as to obtain the hydrogenated composite film layer with a refractive index greater than 3.5 and an extinction coefficient less than 0.005 under a wavelength of 700 nm to 1800 nm.

公开(公告)号：US10077496B2

公开(公告)日：2018-09-18

申请号：US14749335

申请日：2015-06-24

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Da-Ming Zhuang ,  Ming Zhao ,  Ming-Jie Cao ,  Li Guo ,  Shi-Lu Zhan ,  Xiao-Long Li

IPC: C23C14/34 ,  B28B3/00 ,  C23C14/08 ,  H01J37/34

CPC classification number: C23C14/3414 ,  B28B3/00 ,  C23C14/08 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3491

Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.

公开(公告)号：US09960021B2

公开(公告)日：2018-05-01

申请号：US14182831

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Martin Lee Riker ,  Uday Pai ,  William Fruchterman ,  Keith A. Miller ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  H01J37/3411 ,  H01J37/3423 ,  H01J37/3435

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.

公开(公告)号：US20170268122A1

公开(公告)日：2017-09-21

申请号：US15463778

申请日：2017-03-20

Applicant: Hyun Jung Kim ,  Sang H. Choi

Inventor： Hyun Jung Kim ,  Sang H. Choi

IPC: C30B23/08 ,  C23C14/34 ,  H01L21/02 ,  H01J37/32 ,  H01J37/34 ,  C30B29/52 ,  C23C14/18 ,  C23C14/35

CPC classification number: C30B23/08 ,  C23C14/06 ,  C23C14/3414 ,  C23C14/3428 ,  C23C14/35 ,  C30B23/005 ,  C30B23/06 ,  C30B29/52 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3497 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02631

Abstract: Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si1-xGex film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

公开(公告)号：US09598764B2

公开(公告)日：2017-03-21

申请号：US14205624

申请日：2014-03-12

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Wook Shin ,  Sun-Young Jung ,  Il-Sang Lee ,  Jin-Woo Park ,  Dong-Jin Kim

IPC: C04B35/457 ,  C23C14/34 ,  C23C14/08 ,  H01J37/34 ,  H01L51/52

CPC classification number: C23C14/3414 ,  C23C14/086 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3429 ,  H01L51/5253

Abstract: A method of fabricating a sputtering target includes preparing a first powder material including at least one of a tin oxide and a mesh-forming oxide; mixing the first powder material and a second powder material comprising carbon or a tin oxide to prepare a mixture; simultaneously performing a primary compression and primary sintering on the mixture in a reduction atmosphere; and simultaneously performing a secondary compression and secondary sintering on the mixture in the reduction atmosphere to prepare the sputtering target.

公开(公告)号：US20170034965A1

公开(公告)日：2017-02-02

申请号：US15095713

申请日：2016-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-man PARK ,  Keum-hwan PARK ,  Eun-soo PARK ,  Ju-ho LEE

IPC: H05K9/00 ,  H01J37/34 ,  B22D23/00 ,  C23C14/34

CPC classification number: B22D23/003 ,  B29C43/18 ,  B29K2079/08 ,  B29K2705/00 ,  B29K2995/0011 ,  C22C45/00 ,  C22C45/001 ,  C22C45/008 ,  C22C45/02 ,  C22C45/04 ,  C22C45/08 ,  C22C45/10 ,  C23C14/14 ,  C23C14/205 ,  C23C14/34 ,  C23C14/3414 ,  C23C30/00 ,  H01J37/3414 ,  H01J2237/332 ,  H05K9/0024 ,  H05K9/0043 ,  H05K9/0084 ,  Y10T428/12556 ,  Y10T428/12569 ,  Y10T428/12806 ,  Y10T428/12812 ,  Y10T428/12951 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/265

Abstract: An electromagnetic wave shielding thin film for shielding from electromagnetic waves generated in an electronic part is provided. The electromagnetic wave shielding thin film includes metal plate which has elastic limit of 1% or more, strength of 1000 MPa or more, and a volume fraction of an amorphous phase of 50% or more.

Abstract translation: 提供了用于屏蔽电子部件中产生的电磁波的电磁波屏蔽薄膜。 电磁波屏蔽薄膜包括弹性极限为1％以上，强度为1000MPa以上，非晶相的体积分率为50％以上的金属板。

公开(公告)号：US09534286B2

公开(公告)日：2017-01-03

申请号：US13837742

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Goichi Yoshidome ,  Ryan Hanson ,  Donny Young ,  Muhammad Rasheed ,  Keith A. Miller

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  Y10T428/218 ,  Y10T428/219

Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

Abstract translation: 在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面， 第一边 目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 沿着所述背板的第一侧面延伸到所述背板的所述第二侧面的沿着所述背板的外周设置的多个槽，其中所述多个槽被配置成相对于所述工艺防护罩对准所述目标组件。

公开(公告)号：US20160326633A1

公开(公告)日：2016-11-10

申请号：US14749335

申请日：2015-06-24

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： DA-MING ZHUANG ,  MING ZHAO ,  MING-JIE CAO ,  LI GUO ,  SHI-LU ZHAN ,  XIAO-LONG LI

IPC: C23C14/34 ,  C23C14/08

CPC classification number: C23C14/3414 ,  B28B3/00 ,  C23C14/08 ,  H01J37/3414 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3491

Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.

Abstract translation: 溅射靶包括由In2CexZnO4 + 2x表示的铟铈氧化锌，其中x = 0.5〜2。 制造溅射靶的方法包括以下步骤：将氧化铟（In 2 O 3）粉末，氧化铈（CeO 2）粉末和氧化锌（ZnO）粉末混合以形成混合物，将铟（In），铈（Ce ），混合物中In：Ce：Zn的锌（Zn）为2：（0.5〜2）：1; 并在约1250℃至约1650℃的温度下烧结该混合物。

公开(公告)号：US09303312B2

公开(公告)日：2016-04-05

申请号：US14188689

申请日：2014-02-25

Applicant: Areesys Technologies, Inc.

Inventor： Kai-An Wang ,  Craig W. Marion ,  Efrain A. Velazquez ,  Michael Z. Wong ,  Albert Ting ,  Jingru Sun

IPC: H01J37/34 ,  C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/345

Abstract: A deposition system includes a magnetron sputter deposition source that includes a backing frame that includes a window and a closed loop around the window. The backing frame includes inside surfaces towards the window, one or more sputtering targets mounted on inside surfaces of the backing frame, and one or more magnets mounted on outside surfaces of the backing frame. The one or more sputtering targets include sputtering surfaces that define internal walls of the window. The one or more magnets can produce a magnetic field near the one or more sputtering surfaces. A substrate includes a deposition surface oriented towards the window in the backing frame. The deposition surface receives sputtering material(s) from the one or more sputtering targets.

Abstract translation: 沉积系统包括磁控溅射沉积源，其包括包括窗口和围绕窗口的闭环的背衬框架。 背衬框架包括朝向窗户的内表面，安装在背衬框架的内表面上的一个或多个溅射靶，以及安装在背衬框架的外表面上的一个或多个磁体。 一个或多个溅射靶包括限定窗的内壁的溅射表面。 一个或多个磁体可以在一个或多个溅射表面附近产生磁场。 衬底包括朝向背衬框架中的窗口定向的沉积表面。 沉积表面接收来自一个或多个溅射靶的溅射材料。