Abstract:
The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO3:Pr3+, Lu2Si2O2:Pr3+, LaPO4:Pr3+, YBO3:Pr3+ and YPO4:Bi3+.
Abstract:
The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e., a similar approach as used by integrated circuits (IC) and microelectromechanical systems (MEMS). The invention also relates to a lighting arrangement comprising at least one field emission light source.
Abstract:
The invention relates to an electron antenna as an anode for a micro- or nano-focus X-ray generation comprising an antenna base and an antenna element arranged on the antenna base such that the antenna element protrudes from a front surface of the antenna base, wherein the antenna is arranged to guide and attract the electrons in its vicinity to the top the antenna element.
Abstract:
An ultraviolet light emitting device without the use of a p-type semiconductor layer is described. For generating ultraviolet light, an electron beam generator is provided, and an electron beam generated in the electron beam generator is guided to an active layer of an ultraviolet light generator. In the active layer, the electron beam is collided, and electron-hole pairs generated by the collisions are confined in well layers due to barrier layers of the active layer. The confined electrons and holes generate ultraviolet light through recombination.
Abstract:
A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.
Abstract:
A lighting device 1 has phosphors, a porous material (5), and emitters 4. The emitters are interposed between the phosphors and surfaces (2a) to be irradiated with light of the lighting device. The porous material has heat conductivity and is impregnated with the phosphors.
Abstract:
A lighting device 1 has phosphors, a porous material (5), and emitters 4. The emitters are interposed between the phosphors and surfaces (2a) to be irradiated with light of the lighting device. The porous material has heat conductivity and is impregnated with the phosphors.
Abstract:
An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate.
Abstract:
A field electron emission film that is capable of being operated with low electric power and enhancing the uniformity in luminance within the light emission surface contains from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass of carbon nanotubes. The film has a structure wherein grooves having a width in a range of from 0.1 to 50 mm are formed in a total extension of 2 mm or more per 1 mm2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on a surface of the ITO film, and the end portions of the carbon nanotubes exposed to the wall surface of the grooves are designated as an emitter.
Abstract translation:能够以低功率运转并提高发光面内的亮度均匀性的场致电子发射膜含有锡掺杂氧化铟60〜99.9质量%,碳含量0.1〜20质量% 纳米管 该膜具有这样的结构,其中在膜的表面上形成宽度在0.1至50mm范围内的沟槽以2mm / mm 2以上的总延伸面形成,并且碳纳米管暴露在膜的表面上 凹槽。 在基板上形成含有碳纳米管的ITO膜之后,在ITO膜的表面上形成槽,将暴露于槽壁表面的碳纳米管的端部指定为发光体。
Abstract:
The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.