Field electron emission film, field electron emission device, light emission device, and method for producing them
    39.
    发明授权
    Field electron emission film, field electron emission device, light emission device, and method for producing them 有权
    场电子发射膜,场电子发射装置,发光装置及其制造方法

    公开(公告)号:US09324556B2

    公开(公告)日:2016-04-26

    申请号:US14424074

    申请日:2013-08-12

    Abstract: A field electron emission film that is capable of being operated with low electric power and enhancing the uniformity in luminance within the light emission surface contains from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass of carbon nanotubes. The film has a structure wherein grooves having a width in a range of from 0.1 to 50 mm are formed in a total extension of 2 mm or more per 1 mm2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on a surface of the ITO film, and the end portions of the carbon nanotubes exposed to the wall surface of the grooves are designated as an emitter.

    Abstract translation: 能够以低功率运转并提高发光面内的亮度均匀性的场致电子发射膜含有锡掺杂氧化铟60〜99.9质量%,碳含量0.1〜20质量% 纳米管 该膜具有这样的结构,其中在膜的表面上形成宽度在0.1至50mm范围内的沟槽以2mm / mm 2以上的总延伸面形成,并且碳纳米管暴露在膜的表面上 凹槽。 在基板上形成含有碳纳米管的ITO膜之后,在ITO膜的表面上形成槽,将暴露于槽壁表面的碳纳米管的端部指定为发光体。

    Field emission devices and methods for making the same
    40.
    发明授权
    Field emission devices and methods for making the same 有权
    场发射装置及其制作方法

    公开(公告)号:US09099272B2

    公开(公告)日:2015-08-04

    申请号:US14250932

    申请日:2014-04-11

    Inventor: Neal R. Rueger

    Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

    Abstract translation: 本公开包括场发射装置实施例。 本公开还包括用于形成场发射器件的方法实施例。 一个装置实施例包括限定内部空间的壳体,该内部空间包括下部分和上部部分,位于壳体下部的阴极,耦合到阴极的细长纳米结构,位于壳体上部的阳极,以及 位于细长纳米结构和阳极之间的控制网格,以控制阳极和细长纳米结构之间的电子流。

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