公开(公告)号：US5685919A

公开(公告)日：1997-11-11

申请号：US614701

申请日：1996-03-13

申请人： Kazuhiro Saito ,  Hiroshi Yokoyama ,  Takashi Wakamatsu

发明人： Kazuhiro Saito ,  Hiroshi Yokoyama ,  Takashi Wakamatsu

IPC分类号： H01L31/052 ,  H01L31/00 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/04 ,  H01L31/108 ,  H01L51/30 ,  H01L51/42 ,  H01L31/06 ,  H01L31/07

CPC分类号： H01L51/4206 ,  H01L31/0232 ,  H01L31/108 ,  H01L51/0078 ,  H01L51/447 ,  Y02E10/52 ,  Y02E10/549

摘要： Efficiency of a photoelectric conversion device is increased by inducing a surface plasmon also on a metallic electrode located on the side of the device where light is incident. Incident He-Ne laser light is refracted by a semicylindrical lens and is incident on a magnesium fluoride layer and an Al electrode. The surface plasmon is absorbed by a copper phthalocyanine layer to give a photoelectric current between the Al electrode and an Ag electrode.

摘要翻译： 通过在位于光入射装置一侧的金属电极上诱导表面等离子体，增加光电转换装置的效率。 事件He-Ne激光被半圆柱形透镜折射并入射到氟化镁层和Al电极上。 表面等离子体激元被铜酞菁层吸收，在Al电极和Ag电极之间产生光电流。

公开(公告)号：US5536967A

公开(公告)日：1996-07-16

申请号：US319780

申请日：1994-10-07

申请人： Naoki Yokoyama

发明人： Naoki Yokoyama

IPC分类号： H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L27/095 ,  H01L31/07

CPC分类号： H01L29/66878 ,  H01L29/475 ,  H01L29/812

摘要： A Schottky gate electrode of a refractory metal silicide is formed on a compound semiconductor, by which the barrier height is maintained satisfactorily even after heat treatment above 800.degree. C. Accordingly, it is possible to form an impurity diffused region using the Schottky gate electrode as a mask and then to effect the recrystallization of the semiconductor or the activation of the impurity by heat treatment, so that source and drain regions can be positioned by self-alignment relative to the gate electrode.

摘要翻译： 难熔金属硅化物的肖特基电极形成在化合物半导体上，即使在高于800℃的热处理之后，势垒高度保持令人满意。因此，可以使用肖特基栅电极形成杂质扩散区域 然后通过热处理来实现半导体的再结晶或杂质的激活，使得可以通过相对于栅电极的自对准来定位源区和漏区。

公开(公告)号：US4963196A

公开(公告)日：1990-10-16

申请号：US308636

申请日：1989-02-10

申请人： Yuichi Hashimoto

发明人： Yuichi Hashimoto

IPC分类号： H01L51/42 ,  H01L31/0216 ,  H01L31/07 ,  H01L51/30

CPC分类号： H01L51/4206 ,  H01L31/02167 ,  H01L31/07 ,  H01L51/0059 ,  H01L51/0072 ,  H01L51/448 ,  Y02E10/549

摘要： An organic solar cell, comprising an organic photoconductive layer comprising a charge generating substance and a charge transporting substance, and a protective layer covering the organic photoconductive layer blocking low-wavelength light of below 450 nm. Because of the presence of the protective layer, a change in photo-current due to photo-degradation of the charge transporting substance is suppressed while maintaining a high photo-electric conversion efficiency.

摘要翻译： 一种有机太阳能电池，包括含有电荷产生物质和电荷输送物质的有机光电导层，以及覆盖低于450nm的低波长光的有机光电导层的保护层。 由于保护层的存在，在保持高的光电转换效率的同时抑制了由于电荷输送物质的光劣化引起的光电流的变化。

公开(公告)号：US4954182A

公开(公告)日：1990-09-04

申请号：US301916

申请日：1989-03-13

申请人： Stanford R. Ovshinsky ,  David Adler

发明人： Stanford R. Ovshinsky ,  David Adler

IPC分类号： C23C14/00 ,  C23C14/06 ,  H01L25/04 ,  H01L29/16 ,  H01L31/0376 ,  H01L31/07 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C14/0026 ,  C23C14/06 ,  H01L29/1604 ,  H01L31/03762 ,  H01L31/043 ,  H01L31/07 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/548 ,  Y02P70/521

摘要： The production of improved multiple cell photovoltaic amorphous silicon devices having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the silicon alloy material in one or more cells of the device. The adjusting element or elements are added at least to the active photoresponsive regions of constituent amorphous silicon cells, which regions preferably further include at least one of fluorine and hydrogen. One adjusting element is germanium which narrows the band gap from that of the silicon alloy materials without the adjusting element incorporated thereinto. Other adjusting elements can be used, such as carbon or nitrogen to widen the band gap. The silicon and adjusting elements are concurrently combined and deposited as amorphous silicon alloys by glow discharge decomposition techniques.

摘要翻译： 通过在器件的一个或多个单元中的硅合金材料中添加一个或多个带隙调节元件，可以制造具有改进的波长阈值特性的改进的多单元光伏非晶硅器件。 至少将调整元素添加到构成非晶硅电池的活性光响应区域，该区域优选还包括氟和氢中的至少一个。 一个调节元件是锗，其与无合金调节元件的硅合金材料的带隙变窄。 可以使用其它调节元件，例如碳或氮来扩大带隙。 硅和调节元件通过辉光放电分解技术同时组合并沉积为非晶硅合金。

公开(公告)号：US4916326A

公开(公告)日：1990-04-10

申请号：US396760

申请日：1989-08-22

申请人： Katsunori Hatanaka ,  Yoshinori Isobe ,  Toshihiro Saika ,  Katsumi Nakagawa

发明人： Katsunori Hatanaka ,  Yoshinori Isobe ,  Toshihiro Saika ,  Katsumi Nakagawa

IPC分类号： H01L27/146 ,  H01L31/07 ,  H04N5/359 ,  H04N5/369

CPC分类号： H04N3/1581 ,  H01L27/14665

摘要： There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.

摘要翻译： 存在一种光电转换装置，其中以一维阵列形式布置的（NxM）光电转换元件以矩阵形式连接到N个施加电压和M个信号读出电极。 在该装置中，矩阵连接的布线交叉部分设置在施加电压的一侧，并且布线交叉部分的绝缘通过光电导层和高电阻层形成为层叠结构。

公开(公告)号：US4763176A

公开(公告)日：1988-08-09

申请号：US1031

申请日：1987-01-07

申请人： Masanori Ito

发明人： Masanori Ito

IPC分类号： H01L31/0248 ,  H01L27/144 ,  H01L31/00 ,  H01L31/07 ,  H01L31/08 ,  H01L31/10 ,  H01L31/108 ,  H01L29/48 ,  H01L23/48 ,  H01L27/14

CPC分类号： H01L27/1443 ,  H01L31/07 ,  H01L31/1085 ,  Y02E10/50

摘要： A metal-semiconductor-metal photodiode comprises a semiconductor layer and a cathode electrode and an anode electrode which are formed on the semiconductor layer and are made of such mutually different electrode materials that the cathode electrode has a Schottky barrier height .phi..sub.bn from a conduction band satisfying .phi..sub.bn >Eg/2 and the anode electrode has a Schottky barrier height .phi..sub.bp from a valence band satisfying .phi..sub.bp >Eg/2, where Eg denotes the energy band gap.

摘要翻译： 金属 - 半导体 - 金属光电二极管包括半导体层和阴极电极以及阳极电极，它们形成在半导体层上并且由这种相互不同的电极材料制成，使得阴极具有来自导带的肖特基势垒高度 满足phi bn> Eg / 2，阳极电极从满足phi bp> Eg / 2的价带具有肖特基势垒高度phi bp，其中Eg表示能带隙。

公开(公告)号：US4564398A

公开(公告)日：1986-01-14

申请号：US690671

申请日：1985-01-11

申请人： R. Gilbert Kaufman

发明人： R. Gilbert Kaufman

IPC分类号： H01L31/032 ,  H01L31/0336 ,  H01L31/07 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/07 ,  H01L31/032 ,  H01L31/03365 ,  H01L31/18 ,  Y02E10/50

摘要： Thin films of cuprous oxide on thin copper foil, when heat treated in an inert atmosphere and quenched, exhibit a 10- to 100-fold increase in photovoltaic effect.

摘要翻译： 在薄铜箔上的氧化亚铜薄膜，当在惰性气氛中热处理并淬火时，光伏效应增加10至100倍。

公开(公告)号：US4395583A

公开(公告)日：1983-07-26

申请号：US313081

申请日：1981-10-20

申请人： Andrew Meulenberg, Jr.

发明人： Andrew Meulenberg, Jr.

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/07 ,  H01L31/06

CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/07 ,  Y02E10/547

摘要： The surface recombination velocity at the back portion of a solar cell is reduced in a first embodiment by reducing the back surface metal contact area without increasing series resistance. The back surface is provided with a p.sup.+ layer deposited on the solar cell p layer in order to further reduce the surface recombination velocity and therefore the diffusion current generated in the back layer of the cell. The p.sup.+ layer is provided with an oxide coating. Micro holes are etched through the oxide layer, and a thin layer of metal is evaporated over the entire surface. In a second embodiment the surface recombination velocity at the back portion of the cell is reduced by depositing a thin non-conductive coating on the p.sup.+ layer. A selected metal coating is then deposited on the non-conductive coating to thereby form a Mott-Schottky barrier, the metal coating retarding the transport of minority carriers through the non-conductive coating without impeding the flow of majority carriers through the non-conductive coating. In a third embodiment, the surface recombination velocity is reduced by depositing a conductive oxide on the p.sup.+ layer, and a metal coating is further deposited on the conductive oxide coating. The conductive oxide coating reduces surface recombination at the interface of the p.sup.+ and conductive oxide layers, and provides majority carriers to the p.sup.+ layer.

摘要翻译： 在第一实施例中，通过减小背面金属接触面积而不增加串联电阻，太阳能电池背部的表面复合速度降低。 背面设置有沉积在太阳能电池p层上的p +层，以进一步降低表面复合速度，从而进一步降低在电池背面层中产生的扩散电流。 p +层设置有氧化物涂层。 通过氧化物层蚀刻微孔，并且在整个表面上蒸发一薄层金属。 在第二实施例中，通过在p +层上沉积薄的非导电涂层来减小电池后部表面复合速度。 然后将所选择的金属涂层沉积在非导电涂层上，从而形成Mott-肖特基势垒，金属涂层阻止少数载流子通过非导电涂层的输送，而不会阻碍多数载流子流过非导电涂层 。 在第三实施例中，通过在p +层上沉积导电氧化物来减少表面复合速度，并且在导电氧化物涂层上进一步沉积金属涂层。 导电氧化物涂层减少在p +和导电氧化物层的界面处的表面复合，并且向p +层提供多数载流子。

公开(公告)号：US4366334A

公开(公告)日：1982-12-28

申请号：US229524

申请日：1981-01-29

申请人： Baudouin de Cremoux ,  Pierre Poulain ,  Nicole Sol

发明人： Baudouin de Cremoux ,  Pierre Poulain ,  Nicole Sol

IPC分类号： H01L31/04 ,  H01L31/07 ,  H01L31/06

CPC分类号： H01L31/0735 ,  H01L31/07 ,  Y02E10/544

摘要： The invention relates to a low cost photovoltaic cell, using a minimum thickness layer of semiconductor compounds able to provide the photovoltaic effect and specifically in polycrystalline form. On a molybdenum sheet an auxiliary polycrystalline germanium layer is deposited in order to facilitate subsequent depositions. This is followed by an intermediate polycrystalline layer of gallium aluminum arsenide and an active layer of polycrystalline gallium arsenide. The presence of the intermediate layer with a wider forbidden band than that of the active layer compensates the effect on the efficiency of the limited thickness of the active layer.

摘要翻译： 本发明涉及一种低成本的光伏电池，其使用能够提供光伏效应并且特别是多晶形式的半导体化合物的最小厚度层。 在钼片上，沉积辅助多晶锗层以便于随后的沉积。 其后是砷化镓铝的中间多晶层和多晶砷化镓的活性层。 具有比有源层更宽的禁带的中间层的存在补偿了有源层的有限厚度的效率的影响。

公开(公告)号：US4292461A

公开(公告)日：1981-09-29

申请号：US161550

申请日：1980-06-20

申请人： Harold J. Hovel

发明人： Harold J. Hovel

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/07 ,  H01L31/078

CPC分类号： H01L31/078 ,  H01L31/03921 ,  H01L31/07 ,  Y02E10/50

摘要： A high efficiency tandem solar cell may be fabricated wherein a layer of transparent conducting material is placed over a crystalline substrate and under an amorphous region. Light incident on the upper surface has higher energy photons absorbed in the higher bandgap amorphous material and lower energy photons pass through the transparent conductor to a point of absorption in the lower energy gap crystalline material.

摘要翻译： 可以制造高效率串联太阳能电池，其中将透明导电材料层放置在结晶衬底上并在非晶区域下方。 入射在上表面的光具有在较高带隙无定形材料中吸收的较高能量的光子，而较低能量的光子通过透明导体至较低能隙结晶材料中的吸收点。