公开(公告)号：US4561930A

公开(公告)日：1985-12-31

申请号：US589203

申请日：1984-03-13

申请人： Ingo Schwirtlich ,  Peter Woditsch ,  Wolfgang Koch

发明人： Ingo Schwirtlich ,  Peter Woditsch ,  Wolfgang Koch

IPC分类号： C04B35/653 ,  C01B33/02 ,  C01B33/021 ,  C30B11/00 ,  C30B11/14 ,  C30B9/04

CPC分类号： C30B11/14 ,  C01B33/021 ,  C30B11/00 ,  C30B11/003 ,  C30B29/605

摘要： A process for the production of columnarly grown blocks of silicon containing coarsely crystalline regions comprising cooling a silicon melt in a mold, selectively effecting solidification at the melt surface and advancing the solidification front downwardly. The blocks can be sawed into chips, useful for solar cells.

摘要翻译： 一种用于生产柱状生长的含硅粗结晶区块的方法，包括在模具中冷却硅熔体，选择性地在熔体表面上固化并使固化前沿向下推进。 块可以锯成芯片，对太阳能电池有用。

公开(公告)号：US4293372A

公开(公告)日：1981-10-06

申请号：US168927

申请日：1980-07-15

申请人： Howard L. Glass

发明人： Howard L. Glass

IPC分类号： C01G49/00 ,  C30B9/00 ,  C30B9/04 ,  C30B19/02 ,  C30B29/22 ,  H01F1/34 ,  H01F10/20 ,  C30B19/04

CPC分类号： C30B29/22 ,  C30B19/02 ,  C30B9/00 ,  H01F10/205

摘要： Single crystal magnetoplumbite is grown at temperatures under 1000.degree. C. from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause magnetoplumbite to crystallize yet not so much iron oxide as will cause the melt's crystallization temperature to exceed 1000.degree. C.

摘要翻译： 单晶磁铅矿在温度低于1000℃的条件下从具有选定浓度的氧化硼与氧化铅的熔融熔体生长，并且所选择的氧化铁浓度足以使磁铅矿结晶，但不会产生如此多的氧化铁 熔体结晶温度超过1000℃

公开(公告)号：US4292119A

公开(公告)日：1981-09-29

申请号：US168928

申请日：1980-07-15

申请人： Howard L. Glass

发明人： Howard L. Glass

IPC分类号： C01G49/00 ,  C30B9/00 ,  C30B9/04 ,  C30B19/02 ,  C30B29/22 ,  H01F1/34 ,  C30B19/04

CPC分类号： C30B29/22 ,  C30B19/02 ,  C30B9/00

摘要： Single crystal 2PbO.Fe.sub.2 O.sub.3 is grown from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause 2PbO.Fe.sub.2 O.sub.3 to crystallize yet not so much iron oxide as will cause other phases to crystallize.

摘要翻译： 单晶2PbO.Fe 2 O 3由具有选定浓度的氧化硼浓度的氧化铅和选择的氧化铁浓度足以引起2PbO.Fe 2 O 3的助熔熔体生长而不会使其它相结晶， 。

公开(公告)号：US4256530A

公开(公告)日：1981-03-17

申请号：US967114

申请日：1978-12-07

申请人： Frederick Schmid ,  Chandra P. Khattak

发明人： Frederick Schmid ,  Chandra P. Khattak

IPC分类号： C30B11/00 ,  C30B15/10 ,  C30B9/04 ,  C30B15/00

CPC分类号： C30B11/002 ,  C30B11/003 ,  C30B15/10 ,  Y10S117/90

摘要： In the growing of crystals, the formation of carbide contaminants is prevented by eliminating direct silica-graphite contact.

摘要翻译： 在晶体生长中，通过消除直接的二氧化硅 - 石墨接触来防止碳化物污染物的形成。

公开(公告)号：US4231838A

公开(公告)日：1980-11-04

申请号：US898444

申请日：1978-04-20

申请人： Thurman E. Gier

发明人： Thurman E. Gier

IPC分类号： C01G23/00 ,  C01B25/37 ,  C01B25/45 ,  C01G28/00 ,  C30B9/00 ,  C30B9/02 ,  C30B9/04 ,  C30B11/00 ,  C30B15/00 ,  C30B29/14 ,  G02B1/02 ,  B01J17/04 ,  B01J17/20

CPC分类号： C30B29/22 ,  C01B25/37 ,  C01B25/45 ,  C30B11/00 ,  C30B15/00 ,  C30B9/00

摘要： A process for the manufacture of single crystals of MTiOXO.sub.4, wherein M is K, Rb or Tl and X is P or As, of optical quality and of sufficient size for use in nonlinear optical devices. In the process, starting ingredients chosen to be within the region of the ternary phase diagram in which the desired crystal MTiOXO.sub.4 product is the only stable solid phase, are heated to produce MTiOXO.sub.4 and then controllably cooled to crystallize the desired product. In a preferred method the ingredients are placed in a temperature gradient in which the hot zone ranges from about 800.degree.-1000.degree. C. and the cold zone about 10.degree.-135.degree. C. cooler, maintaining the temperature gradient for about 3 days to about 3 weeks, cooling, and recovering MTiOXO.sub.4 crystals.

摘要翻译： 制造MTiOXO4的单晶的方法，其中M是K，Rb或T1，X是P或As，具有光学质量并且足够用于非线性光学器件的尺寸。 在此过程中，加热选择在所需晶体MTiOXO4产物是唯一稳定的固相的三元相图区域内的起始成分，以产生MTiOXO4，然后可控地冷却以使所需产物结晶。 在优选的方法中，将成分置于温度梯度中，其中热区的范围为约800-1000℃，冷区为约10-113℃，冷却器，保持温度梯度约3天至 约3周，冷却并回收MTiOXO4晶体。

公开(公告)号：US11525190B2

公开(公告)日：2022-12-13

申请号：US17328267

申请日：2021-05-24

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： Hao Li ,  Yang Wu ,  Shou-Shan Fan

IPC分类号： C30B9/04 ,  C30B29/52

摘要： The disclosure relates to a method for making an iron telluride including placing Fe, Bi, and Te in a reacting chamber as reacting materials. The reacting chamber is evacuated to be a vacuum with a pressure lower than 10 Pa. The reacting chamber is heated to a first temperature of 700 degrees Celsius to 900 degrees Celsius and keeping the first temperature for a period of 10 hours to 14 hours. Then the reacting chamber is cooled to a second temperature of 400 degrees Celsius to 700 degrees Celsius within 60 hours to 75 hours and keeping the second temperature for a period of 40 hours to 50 hours, to obtain a reaction product including a FeTe0.9 single crystal. The FeTe0.9 single crystal is separated from the reaction product.

公开(公告)号：US10059077B2

公开(公告)日：2018-08-28

申请号：US14586975

申请日：2014-12-31

申请人： Joe Ru He Zhao

发明人： Joe Ru He Zhao

IPC分类号： B32B3/12 ,  B32B15/04 ,  B32B7/12 ,  B32B5/02 ,  C30B29/22 ,  C30B29/68 ,  C30B29/12 ,  C30B9/04 ,  C30B9/12 ,  C30B11/00 ,  B32B15/14 ,  B32B15/20 ,  B32B19/04 ,  B32B27/08 ,  B32B27/10 ,  E04B1/00

CPC分类号： B32B3/12 ,  B32B5/02 ,  B32B7/12 ,  B32B15/043 ,  B32B15/14 ,  B32B15/20 ,  B32B19/041 ,  B32B19/045 ,  B32B27/08 ,  B32B27/10 ,  B32B2250/40 ,  B32B2250/42 ,  B32B2255/06 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2255/26 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2262/02 ,  B32B2262/06 ,  B32B2262/101 ,  B32B2262/108 ,  B32B2262/14 ,  B32B2264/102 ,  B32B2264/12 ,  B32B2307/30 ,  B32B2307/304 ,  B32B2307/306 ,  B32B2307/412 ,  B32B2307/58 ,  B32B2307/704 ,  B32B2307/72 ,  B32B2307/7242 ,  B32B2307/732 ,  B32B2419/04 ,  B32B2607/02 ,  C30B9/04 ,  C30B9/12 ,  C30B11/00 ,  C30B29/12 ,  C30B29/22 ,  C30B29/68 ,  E04B1/00 ,  E04B2001/748

摘要： A thermal insulation panel is consist of an impermeable barrier and backing, a surface of low emissivity, an adhesive, a mixture of phononic cocrystals at both sides, and a support material in a honeycomb structure in between two sides. The panel reduces heat transfer and has an overall thermal conductivity in order of 10−3 w/(m·K), and a density of 20-100 kg/m3. The panel can be cut to any sizes to meet requirements for installation, and can be stacked or piled up to meet the requirements of thickness and thermal resistance in application.

公开(公告)号：US09970126B2

公开(公告)日：2018-05-15

申请号：US14770194

申请日：2014-02-20

申请人： Massachusetts Institute of Technology

发明人： Richard J. Molnar

IPC分类号： C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L31/0304 ,  C30B7/10 ,  C30B9/04 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02

CPC分类号： C30B23/025 ,  C30B7/105 ,  C30B9/04 ,  C30B25/183 ,  C30B25/20 ,  C30B29/36 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L31/03044 ,  Y02E10/544

摘要： Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.

公开(公告)号：US09567690B2

公开(公告)日：2017-02-14

申请号：US14406166

申请日：2013-05-29

申请人： CSIR

发明人： David Steyn Van Vuuren ,  Salomon Johannes Oosthuizen ,  Jaco Johannes Swanepoel

IPC分类号： C30B9/04 ,  C30B9/00 ,  B22F1/00 ,  B22F3/24 ,  C30B29/02

CPC分类号： C30B9/00 ,  B22F1/0007 ,  B22F3/24 ,  C30B29/02

摘要： The invention provides a process for the production of crystalline titanium powder containing single crystals or agglomerates of single crystals having an average crystal size (by volume) greater than 1 μm, said process including reacting a titanium chloride species, preferably titanium dichloride, and reducing metal in a continuous back-mix reactor to produce a free flowing suspension of titanium powder in molten chloride salt wherein: i. both the titanium chloride species and the reducing metal are dissolved in a molten chloride salt and fed to the reactor containing a chloride salt of the reducing metal; ii. the average feed ratio of the titanium chloride species and reducing metal to the continuous back-mix reactor is within 1%, preferably within 0.1%, of the stoichiometric ratio required to fully reduce the titanium chloride salt to titanium metal; iii. the concentration of titanium powder in the fluid suspension of titanium powder in molten salt in the continuous back-mix reactor is between 2 and 23 mass %; and iv. The reducing metal is lithium, sodium, magnesium, or calcium.

摘要翻译： 本发明提供一种生产具有平均晶体尺寸（体积）大于1μm的单晶结晶或单晶团结的结晶钛粉末的方法，所述方法包括使氯化钛物质，优选二氯化钛和还原金属 在连续的反混混合反应器中以产生钛粉末在熔融氯化物盐中的自由流动的悬浮液，其中： 将氯化钛物质和还原金属都溶解在氯化物盐中，并进料到含有还原金属的氯化物盐的反应器中; ii。 氯化钛物质和还原金属与连续反混反应器的平均进料比在将氯化钛盐完全还原成钛金属所需的化学计量比的1％以内，优选在0.1％以内; iii。 在连续回混反应器中熔融盐中钛粉末的流体悬浮液中钛粉末的浓度为2〜23质量％ 和iv。 还原金属是锂，钠，镁或钙。

公开(公告)号：US20160002822A1

公开(公告)日：2016-01-07

申请号：US14770194

申请日：2014-02-20

申请人： Massachusetts Institute Of Technology

发明人： Richard J. Molnar

IPC分类号： C30B29/40 ,  C30B25/20 ,  C30B23/02 ,  C30B7/10 ,  C30B9/04

CPC分类号： C30B23/025 ,  C30B7/105 ,  C30B9/04 ,  C30B25/183 ,  C30B25/20 ,  C30B29/36 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L31/03044 ,  Y02E10/544

摘要： Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.

摘要翻译： 本发明提供一种用于形成具有至少一种结晶对称性的结晶材料的独立层的生长结构。 生长结构包括主体衬底和设置在主体衬底上用于在其上生长结晶材料层的分离层。 分离层具有分离层厚度，并且比主体衬底和结晶材料机械地弱。 孔的阵列位于分离层中，每个孔延伸穿过分离层的厚度。