公开(公告)号：US20140097487A1

公开(公告)日：2014-04-10

申请号：US13648127

申请日：2012-10-09

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Tzu-Shih YEN ,  Daniel TANG ,  Tsungnan CHENG

IPC: H01L21/265 ,  H01L29/78

CPC classification number: H01L21/2236 ,  H01L29/66803 ,  H01L29/785

Abstract: In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.

Abstract translation: 在等离子体掺杂非平面半导体器件中，获得其上形成有非平面半导体体的衬底。 具有非平面半导体本体的基板可以放置在室中。 等离子体可以在室中形成，等离子体可以含有掺杂离子。 可以产生第一偏置电压以将掺杂剂离子注入到非平面半导体本体的区域中。 可以产生第二偏置电压以将掺杂剂离子注入到相同的区域中。 在一个示例中，第一偏置电压和第二偏置电压可以不同。

公开(公告)号：US20250062097A1

公开(公告)日：2025-02-20

申请号：US18939181

申请日：2024-11-06

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Chi-ming HUANG ,  Shao-Yu HU

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.

公开(公告)号：US20230005701A1

公开(公告)日：2023-01-05

申请号：US17366308

申请日：2021-07-02

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Chi-ming HUANG ,  Shao-Yu HU

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.

公开(公告)号：US20210242054A1

公开(公告)日：2021-08-05

申请号：US17162108

申请日：2021-01-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li CHEN ,  Steven R. WALTHER

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/324 ,  C23C14/48 ,  C23C14/54

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

公开(公告)号：US10984524B2

公开(公告)日：2021-04-20

申请号：US16185133

申请日：2018-11-09

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li Chen ,  Yu-Ho Ni ,  Chien-Cheng Kuo ,  Te-min Wang

IPC: G06T7/00 ,  G06T7/73 ,  H01L21/68

Abstract: A method for calibrating element in a semiconductor processing device with a camera is provided. The method for calibrating element in a semiconductor processing device with a camera includes taking a first picture of a first element by a camera; providing a first actuator to move the first element an increment along a first direction; taking a second picture of the first element by the camera; and comparing the first picture and the second picture to calibrate the first element. A system for calibrating element in a semiconductor processing device with a camera is also provided.

公开(公告)号：US20210104378A1

公开(公告)日：2021-04-08

申请号：US17061972

申请日：2020-10-02

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Shao-Yu HU

IPC: H01J37/317 ,  H01J37/32 ,  H01J37/24

Abstract: The invention provides a bias voltage to the component (such as the Faraday cup) for reducing the generation of particles, such as the implanted ions and/or the combination of the implanted ions and the material of the component, and preventing particles peeling away the component. The strength of the biased voltage should not significantly affect the implantation of ions into the wafer and should significantly prevent the emission of radiation and/or electrons away the biased component. How to provide and adjust the biased voltage is not limited, both the extra voltage source and the amended Pre-Amplifier are acceptable. Moreover, due to the electric field generated by the Faraday cup is modified by the biased voltage, the ion beam divergence close to the Faraday cup may be reduced such that the potential difference between the ion beam measured by the profiler and received by the Faraday cup may be minimized.

公开(公告)号：US10804821B2

公开(公告)日：2020-10-13

申请号：US15689158

申请日：2017-08-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Te-Min Wang ,  Yu-Ho Ni ,  Chun-Chieh Lin ,  Chien-Chung Hou ,  Cheng-Mao Chien

IPC: H02N13/00 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  G01R31/28 ,  G01R27/26 ,  H05F3/02

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

公开(公告)号：US09653253B2

公开(公告)日：2017-05-16

申请号：US14201747

申请日：2014-03-07

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： William Divergilio ,  Stephen Savas ,  Susan Felch ,  Tienyu Sheng ,  Hao Chen

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/30 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/061 ,  H01J2237/083

Abstract: A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

公开(公告)号：US20170110287A1

公开(公告)日：2017-04-20

申请号：US14883538

申请日：2015-10-14

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin WAN ,  Kourosh SAADATMAND ,  Nicholas WHITE

IPC: H01J37/30

CPC classification number: H01J37/3007 ,  H01J37/1471 ,  H01J37/3171 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924

Abstract: Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.

公开(公告)号：US20160233047A1

公开(公告)日：2016-08-11

申请号：US15133619

申请日：2016-04-20

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Daniel TANG ,  Tienyu SHENG

IPC: H01J37/02 ,  H01J37/32 ,  H01L21/265

CPC classification number: H05H3/02 ,  H01J37/026 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3266 ,  H01J37/32688 ,  H01J2237/061 ,  H01J2237/083

Abstract: Systems and processes for plasma-based material modification of a work piece are provided. In an example process, a first plasma in a plasma source chamber is generated. A magnetic field is generated using a plurality of magnets. The magnetic field confines electrons of the first plasma having energy greater than 10 eV within the plasma source chamber. A second plasma is generated in a process chamber coupled to the plasma source chamber. An ion beam is generated in the process chamber by extracting ions from the first plasma through the plurality of magnets. The ion beam travels through the second plasma and is neutralized by the second plasma to generate a neutral beam. The work piece is positioned in the process chamber such that the neutral beam treats a surface of the work piece.

Abstract translation: 提供了工件等离子体材料改性的系统和工艺。 在示例性过程中，产生等离子体源室中的第一等离子体。 使用多个磁体产生磁场。 磁场限制等离子体源室内具有大于10eV的能量的第一等离子体的电子。 在耦合到等离子体源室的处理室中产生第二等离子体。 在处理室中通过从多个磁体中提取离子从第一等离子体中产生离子束。 离子束穿过第二等离子体并被第二等离子体中和以产生中性光束。 工件定位在处理室中，使得中性梁处理工件的表面。