-
41.发明申请公开(公告)号：US20100221911A1
公开(公告)日：2010-09-02
申请号：US12711373
申请日：2010-02-24
Applicant: Oliver Aubel , Joerg Hohage , Frank Feustel , Axel Preusse
Inventor： Oliver Aubel , Joerg Hohage , Frank Feustel , Axel Preusse
IPC: H01L21/768
CPC classification number: H01L21/76826 , H01L21/02063 , H01L21/02068 , H01L21/3105 , H01L21/76814 , H01L21/76828 , H01L21/76864 , Y10S438/906
Abstract: During the formation of complex metallization systems, a conductive cap layer may be formed on a copper-containing metal region in order to enhance the electromigration behavior without negatively affecting the overall conductivity. At the same time, a thermo chemical treatment may be performed to provide superior surface conditions of the sensitive dielectric material and also to suppress carbon depletion, which may conventionally result in a significant variability of material characteristics of sensitive ULK materials.
Abstract translation: 在形成复杂的金属化系统期间，可以在含铜金属区域上形成导电覆盖层，以增强电迁移行为，而不会不利地影响总导电性。 同时，可以进行热化学处理以提供敏感电介质材料的优异的表面条件并且还抑制碳消耗，这常常导致敏感的ULK材料的材料特性的显着变化。
-
公开(公告)号：US20100024724A1
公开(公告)日：2010-02-04
申请号：US12567279
申请日：2009-09-25
Applicant: Helge Hartz , Markus Nopper , Axel Preusse
Inventor： Helge Hartz , Markus Nopper , Axel Preusse
CPC classification number: C25D21/04 , C25D5/08 , C25D17/02 , H01L21/2885
Abstract: The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.
Abstract translation: 本发明涉及从处理液中除去气泡的方法和装置。 处理液体可以包括用于电镀工具中的电镀液。 将处理液体供给到罐中。 处理液体的多个流从下方引导到处理液体的表面。 这可以通过将处理液体供给到包括多个开口的流量分配器来实现，该多个开口提供流量分配器的内部容积与罐的主体积之间的流动连通。 在离开水箱通过出口之前，工艺液体流过流动屏障。
-
43.发明申请REDUCING LEAKAGE IN DIELECTRIC MATERIALS INCLUDING METAL REGIONS INCLUDING A METAL CAP LAYER IN SEMICONDUCTOR DEVICES 有权包括金属层在内的电介质材料中的泄漏，包括半导体器件中的金属层公开(公告)号：US20090325375A1
公开(公告)日：2009-12-31
申请号：US12425498
申请日：2009-04-17
Applicant: Axel Preusse , Markus Nopper , Thomas Ortleb , Juergen Boemmels
Inventor： Axel Preusse , Markus Nopper , Thomas Ortleb , Juergen Boemmels
IPC: H01L21/768
CPC classification number: H01L21/76828 , H01L21/288 , H01L21/76826 , H01L21/76829 , H01L21/76849 , H01L21/76864 , H01L21/76883 , H01L24/13 , H01L2924/01019 , H01L2924/01068 , H01L2924/01078 , H01L2924/1306 , H01L2924/14 , H01L2924/1433 , H01L2924/00
Abstract: By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.
Abstract translation: 通过在敏感介电材料与湿化学试剂（例如电解质溶液）接触之前和/或之后引入额外的热处理，可以在制造高级半导体器件期间实现关于漏电流或介电强度的增强性能。 例如，可以基于无电沉积技术提供用于金属线的金属盖层，其中额外的热处理可以提供所需的电性能。
-
44.发明申请METHOD OF FORMING A COPPER-BASED METALLIZATION LAYER INCLUDING A CONDUCTIVE CAP LAYER BY AN ADVANCED INTEGRATION REGIME 审中-公开通过高级集成方案形成包含导电层的基于铜的金属化层的方法公开(公告)号：US20080206986A1
公开(公告)日：2008-08-28
申请号：US11871247
申请日：2007-10-12
Applicant: Axel Preusse , Berit Freudenberg , Michael Friedemann
Inventor： Axel Preusse , Berit Freudenberg , Michael Friedemann
IPC: H01L21/441
CPC classification number: H01L21/76843 , H01L21/76805 , H01L21/76846 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.
Abstract translation: 通过适当地设计多个沉积步骤和中间溅射工艺，通孔开口内的阻挡材料的形成可以基于高效的工艺策略来实现，该方法可以容易地将形成在含金属区域上方的导电盖层整合到井下， 批准的过程序列。
-
公开(公告)号：US20080182406A1
公开(公告)日：2008-07-31
申请号：US11761444
申请日：2007-06-12
Applicant: Axel Preusse , Michael Friedemann , Robert Seidel , Berit Freudenberg
Inventor： Axel Preusse , Michael Friedemann , Robert Seidel , Berit Freudenberg
IPC: H01L21/4763
CPC classification number: H01L23/53238 , H01L21/76802 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L2924/0002 , H01L2924/00
Abstract: By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.
-
Patent Agency Ranking
46.发明授权Method of reducing wafer contamination by removing under-metal layers at the wafer edge 有权通过在晶片边缘去除下金属层来减少晶片污染的方法公开(公告)号：US07169664B2
公开(公告)日：2007-01-30
申请号：US10747722
申请日：2003-12-29
Applicant: Axel Preusse , Markus Nopper , Holger Schührer
Inventor： Axel Preusse , Markus Nopper , Holger Schührer
IPC: H01L29/72
CPC classification number: H01L21/02087 , C23F1/18 , C23F1/26 , H01L21/31111 , H01L21/32134 , Y10S134/902
Abstract: According to the present invention, a metal and a barrier material, such as copper and a tantalum-based barrier material, are effectively removed from the wafer edge and especially from the bevel by using an etchant that comprises a diluted mixture of hydrofluoric acid and nitric acid. The method is compatible with currently available etch modules for removing metal from the wafer edge, wherein, depending on the hardware specifics, copper, barrier material and dielectric material may be removed in a single etch step, or a first etch step may be performed substantially without any nitric acid so as to avoid the formation of nitric oxides. In this way, the formation of instable layer stacks may be substantially avoided, thereby reducing the risk of material delamination from the substrate edge.
Abstract translation: 根据本发明，通过使用包含氢氟酸和硝酸的稀释混合物的蚀刻剂，有效地从晶片边缘，特别是从斜面去除金属和阻挡材料，例如铜和钽基阻挡材料 酸。 该方法与当前可用的用于从晶片边缘去除金属的蚀刻模块兼容，其中，根据硬件特性，可以在单个蚀刻步骤中去除铜，阻挡材料和电介质材料，或者可以基本上执行第一蚀刻步骤 没有任何硝酸，以避免形成一氧化氮。 以这种方式，可以基本上避免形成不稳定层叠，从而降低材料从基板边缘分层的风险。
-
47.发明授权Method and system for controlling ion distribution during plating of a metal on a workpiece surface 有权在工件表面镀金属时控制离子分布的方法和系统公开(公告)号：US06974530B2
公开(公告)日：2005-12-13
申请号：US10358969
申请日：2003-02-05
Applicant: Matthias Bonkass , Axel Preusse
Inventor： Matthias Bonkass , Axel Preusse
CPC classification number: C25D5/02 , C25D5/006 , C25D7/123 , C25D17/001 , C25D17/008 , Y10S204/07
Abstract: The flow of electrolyte and/or of ions is controlled by a diffuser element provided in a plating reactor, wherein, in one embodiment, the diffuser element comprises a mechanical adjustment mechanism to adjust the effective size of passages of the diffuser element. In another embodiment, the diffuser element comprises at least two patterns of passages that are movable relatively to each other so as to adjust an overlap and thus an effective size of the corresponding passages. Moreover, the path of ions within the plating reactor may be controlled by an electromagnetically driven diffuser element so that a required thickness profile on the workpiece surface may be obtained.
Abstract translation: 电解质和/或离子的流动由设置在电镀反应器中的扩散器元件控制，其中在一个实施例中，漫射元件包括用于调节扩散器元件的通道的有效尺寸的机械调节机构。 在另一个实施例中，扩散器元件包括可相对于彼此移动的至少两个通道图案，以便调整相应通道的重叠并因此调整有效尺寸。 此外，电镀反应器内的离子路径可以由电磁驱动的扩散器元件来控制，从而可获得工件表面上所需的厚度分布。
-
48.发明授权Apparatus and method for treating a substrate electrochemically while reducing metal corrosion 失效电化学处理基板同时减少金属腐蚀的装置和方法公开(公告)号：US06841056B2
公开(公告)日：2005-01-11
申请号：US10304903
申请日：2002-11-26
Applicant: Axel Preusse
Inventor： Axel Preusse
IPC: C25D5/00 , C25D7/12 , H01L21/288 , C25D17/00
CPC classification number: H01L21/2885 , C25D5/003 , C25D17/001 , C25D17/008 , C25D17/02 , Y10S438/905 , Y10S438/909
Abstract: A process tool for electrochemically treating a substrate is configured to reduce the oxygen concentration and/or the sulfur dioxide concentration in the vicinity of the substrate so that corrosion of copper may be reduced. In one embodiment, a substantially inert atmosphere is established within the process tool including a plating reactor by providing a continuous inert gas flow and/or by providing a cover that reduces a gas exchange with the ambient atmosphere. The substantially inert gas atmosphere may also be maintained during further process steps involved in electrochemically treating the substrate including required transportation steps between the individual process steps.
Abstract translation: 用于电化学处理衬底的工艺工具被配置为降低衬底附近的氧浓度和/或二氧化硫浓度，从而可以降低铜的腐蚀。 在一个实施方案中，通过提供连续的惰性气体流和/或通过提供减少与环境气氛的气体交换的盖，在工艺工具内建立基本上惰性的气氛，包括电镀反应器。 在涉及电化学处理衬底的进一步工艺步骤期间，还可以维持基本上惰性的气体气氛，包括在各个工艺步骤之间所需的运输步骤。
-
公开(公告)号：US06106680A
公开(公告)日：2000-08-22
申请号：US237573
申请日：1999-01-26
Applicant: Takeshi Nogami , Axel Preusse , Valery Dubin
Inventor： Takeshi Nogami , Axel Preusse , Valery Dubin
IPC: C25D7/12 , C25D17/00 , H01L21/288 , C25B11/00
CPC classification number: C25D17/001 , C25D17/005 , H01L21/2885
Abstract: A method and apparatus for fabricating electrochemical copper interconnections between the component parts of an integrated circuit on a semiconductor device. A cathodic platter is provided that includes contact pins that contact the surface of a semiconductor wafer at predetermined locations during the electrochemical deposition process. The contact pins are arranged on the cathodic platter so that when placed on the surface of the semiconductor wafer the contact pins surround the perimetrical edges of each respective semiconductor device on the semiconductor wafer. Once the semiconductor wafer is properly positioned on the cathodic platter, a copper conductive layer can be electrochemically and uniformly deposited on the surface of the semiconductor device.
Abstract translation: 一种用于在半导体器件上的集成电路的部件之间制造电化学铜互连的方法和装置。 提供了一种阴极拼盘，其包括在电化学沉积过程期间在预定位置处接触半导体晶片的表面的接触针。 接触针布置在阴极盘上，使得当放置在半导体晶片的表面上时，接触引脚围绕半导体晶片上每个相应半导体器件的周边。 一旦半导体晶片正确地定位在阴极盘上，铜导电层可以电化学均匀地沉积在半导体器件的表面上。
-
50.发明授权
公开(公告)号：US6103086A
公开(公告)日：2000-08-15
申请号：US225539
申请日：1999-01-05
Applicant: Christy Woo , Axel Preusse , Sergey Lopatin
Inventor： Christy Woo , Axel Preusse , Sergey Lopatin
Abstract: The reliability of Cu and Cu alloy interconnects is significantly enhanced by controlling the temperature of the electroplating solution during via opening filling to substantially prevent occlusion of the opening. Embodiments of the present invention include electroplating Cu or a Cu alloy from an electroplating solution at a temperature of about 20.degree. C. or less.
Abstract translation: 通过在通孔开口填充期间控制电镀溶液的温度以显着地防止开口的堵塞，显着提高了Cu和Cu合金互连的可靠性。 本发明的实施例包括在约20℃或更低的温度下从电镀溶液中电镀Cu或Cu合金。
-
-
-
-
-
-
-
-
-
Search Results
50
records
(took 0.022 seconds)
