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    Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties
    42.
    发明授权
    Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties 有权
    ILD层的两步沉积后处理具有较低的介电常数和改善的机械性能

    公开(公告)号：US07250370B2

    公开(公告)日：2007-07-31

    申请号：US10666354

    申请日：2003-09-19

    申请人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien I. Bao ,  Yun-Chen Lu

    发明人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien I. Bao ,  Yun-Chen Lu

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3124 ,  H01L21/31633 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835

    摘要： A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ, or MSQ is cured and treated with a He plasma which improves hardness for a subsequent CMP step and lowers the dielectric constant. There is no loss of H2O or CH4 during the He treatment. The low k dielectric layer is then treated with a H2 plasma which converts some of the Si—O and Si—CH3 bonds near the surface to Si—H bonds, thereby further lowering the dielectric constant and increasing thermal stability that improves breakdown resistance. Moisture uptake is also reduced. The method is especially useful for interconnect schemes with deep sub-micron ground rules. Surprisingly, the k value obtained from two different plasma treatments is lower than when two He treatments or two H2 treatment are performed.

    摘要翻译： 提供降低有机硅低k电介质层的介电常数同时提高硬度和热稳定性的方法。 掺杂碳的氧化物，HSQ或MSQ的沉积层用He等离子体固化和处理，其提高后续CMP步骤的硬度并降低介电常数。 在He处理期间，没有H 2 O 2或CH 4 O 3的损失。 然后用H 2 O 2等离子体处理低k电介质层，其将表面附近的一些Si-O和Si-CH 3键转化为Si-H键， 从而进一步降低介电常数并增加热稳定性，从而提高耐击穿性。 吸湿也减少。 该方法对于具有深亚微米基准规则的互连方案特别有用。 令人惊讶的是，从两种不同的等离子体处理获得的k值低于当执行两个He处理或两个H 2 N 2处理时。

    ATR-FTIR metal surface cleanliness monitoring
    44.
    发明授权
    ATR-FTIR metal surface cleanliness monitoring 失效
    ATR-FTIR金属表面清洁度监测

    公开(公告)号：US06908773B2

    公开(公告)日：2005-06-21

    申请号：US10102574

    申请日：2002-03-19

    申请人： Lain-Jong Li ,  Syun-Ming Jang ,  Chung-Chi Ko

    发明人： Lain-Jong Li ,  Syun-Ming Jang ,  Chung-Chi Ko

    IPC分类号： G01N21/35 ,  G01N21/55 ,  G01R31/26 ,  H01L21/66

    CPC分类号： G01N21/35 ,  G01N21/3563 ,  G01N21/552 ,  G01N21/94 ,  G01N2021/3595

    摘要： Attenuated total reflectance (ATR)-Fourier transform infrared (FTIR) metal surface cleanliness monitoring is disclosed. A metal surface of a semiconductor die is impinged with an infrared (IR) beam, such as can be accomplished by using an ATR technique. The IR beam as reflected by the metal surface is measured. For instance, an interferogram of the reflected IR beam may be measured. A Fourier transform of the interferogram may also be performed, in accordance with an FTIR technique. To determine whether the metal surface is contaminated, the IR beam as reflected is compared to a reference sample. For example, the Fourier transform of the interferogram may be compared to the reference sample. If there is deviation by more than a threshold, the metal surface may be concluded as being contaminated.

    摘要翻译： 公开了衰减全反射（ATR） - 傅立叶变换红外（FTIR）金属表面清洁度监测。 半导体管芯的金属表面被红外（IR）光束照射，例如可以通过使用ATR技术来实现。 测量由金属表面反射的IR光束。 例如，可以测量反射的IR光束的干涉图。 干涉图的傅立叶变换也可以根据FTIR技术进行。 为了确定金属表面是否被污染，将反射的IR光束与参考样品进行比较。 例如，干涉图的傅立叶变换可以与参考样本进行比较。 如果偏差大于阈值，金属表面可能被认定为被污染。

    Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties
    45.
    发明申请
    Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties 有权
    ILD层的两步沉积后处理具有较低的介电常数和改善的机械性能

    公开(公告)号：US20050064698A1

    公开(公告)日：2005-03-24

    申请号：US10666354

    申请日：2003-09-19

    申请人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien Bao ,  Yun-Chen Lu

    发明人： Hui-Lin Chang ,  Chung-Chi Ko ,  Tien Bao ,  Yun-Chen Lu

    IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H05H1/00 ,  H05H1/24

    CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3124 ,  H01L21/31633 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835

    摘要： A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ, or MSQ is cured and treated with a He plasma which improves hardness for a subsequent CMP step and lowers the dielectric constant. There is no loss of H2O or CH4 during the He treatment. The low k dielectric layer is then treated with a H2 plasma which converts some of the Si—O and Si—CH3 bonds near the surface to Si—H bonds, thereby further lowering the dielectric constant and increasing thermal stability that improves breakdown resistance. Moisture uptake is also reduced. The method is especially useful for interconnect schemes with deep sub-micron ground rules. Surprisingly, the k value obtained from two different plasma treatments is lower than when two He treatments or two H2 treatment are performed.

    摘要翻译： 提供降低有机硅低k电介质层的介电常数同时提高硬度和热稳定性的方法。 掺杂碳的氧化物，HSQ或MSQ的沉积层用He等离子体固化和处理，其提高后续CMP步骤的硬度并降低介电常数。 在他治疗期间，没有H2O或CH4的损失。 然后用H 2等离子体处理低k电介质层，其将表面附近的一些Si-O和Si-CH 3键转化为Si-H键，从而进一步降低介电常数并增加热稳定性，从而提高耐击穿性。 吸湿也减少。 该方法对于具有深亚微米基准规则的互连方案特别有用。 令人惊讶的是，从两种不同的等离子体处理获得的k值低于执行两个He处理或两个H2处理时。

    Water treating apparatus for raising oxygen solubility
    47.
    发明授权
    Water treating apparatus for raising oxygen solubility 失效
    提高氧气溶解度的水处理装置

    公开(公告)号：US5997752A

    公开(公告)日：1999-12-07

    申请号：US722317

    申请日：1996-09-27

    申请人： Sheng-I Leu ,  Shun-Chen Chen ,  Sheng-Shih Cheng ,  Kuo-Chi Ko

    发明人： Sheng-I Leu ,  Shun-Chen Chen ,  Sheng-Shih Cheng ,  Kuo-Chi Ko

    IPC分类号： C02F1/36 ,  C02F1/78 ,  C02F9/12

    CPC分类号： C02F1/36 ,  C02F1/78 ,  Y10S210/90

    摘要： A water treating apparatus for raising oxygen solubility in high-purity drinking water includes a high pressure pump for conveying high-purity drinking water treated by an R. O. treatment, or a U. F. treatment, or a distillation treatment, or a purity treatment into a closed container. An ozone injecter injects ozone in the drinking water conveyed by the high pressure pump. A cooler affixed around the closed container cools the water stored therein to a preset value. A supersonic vibrator stirs the stored drinking water so as to raise oxygen solubility in the drinking water stored in the closed container, and to prolong period of time for sterilization.

    摘要翻译： 用于在高纯度饮用水中提高氧气溶解度的水处理装置包括：高压泵，用于输送通过RO处理或UF处理或蒸馏处理或纯度处理的高纯度饮用水进入密闭容器 。 臭氧注射器将臭氧注入高压泵输送的饮用水中。 固定在密封容器周围的冷却器将存储在其中的水冷却至预设值。 超音速振动器搅拌储存的饮用水，以便在储存在密闭容器中的饮用水中提高氧气的溶解度，并延长灭菌时间。