LIGHT-EMITTING DIODE COMPONENT
    41.
    发明申请
    LIGHT-EMITTING DIODE COMPONENT 有权
    发光二极管组件

    公开(公告)号:US20120199852A1

    公开(公告)日:2012-08-09

    申请号:US13021496

    申请日:2011-02-04

    Abstract: An LED component includes, according to a first embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an optical lens overlying the LED chips and having a lens base attached to the substrate, where the LED chips are positioned to provide a peak emission shifted from a perpendicular centerline of the lens base. The LED component includes, according to a second embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an array of optical lenses, each optical lens overlying at least one of the LED chips and having a lens base attached to the substrate, where at least one of the LED chips is positioned to provide a peak emission shifted from a perpendicular centerline of the respective lens base.

    Abstract translation: 根据第一实施例,LED组件包括单片基板,设置在基板的表面上的LED芯片的阵列以及覆盖LED芯片并且具有附接到基板的透镜基板的光学透镜,其中LED芯片 定位成提供从透镜基座的垂直中心线偏移的峰值发射。 根据第二实施例,LED组件包括单片基板,设置在基板的表面上的LED芯片阵列和光学透镜阵列,每个光学透镜覆盖至少一个LED芯片并具有透镜 基底,其中至少一个LED芯片被定位成提供从相应透镜基底的垂直中心线偏移的峰值发射。

    SIDE VIEW SURFACE MOUNT LED
    44.
    发明申请
    SIDE VIEW SURFACE MOUNT LED 有权
    侧视图表面安装LED

    公开(公告)号:US20120104428A1

    公开(公告)日:2012-05-03

    申请号:US13347243

    申请日:2012-01-10

    Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.

    Abstract translation: 公开了一种发光二极管。 二极管包括封装支撑件和封装支撑件上的半导体芯片,其中芯片包括在光谱的可见部分中发光的有源区域。 金属触点与封装上的芯片电连通。 基本上透明的密封剂覆盖封装中的芯片。 密封剂中的荧光体发射可见光谱中与芯片发射的频率不同的频率,并响应芯片发出的波长。 还公开了组合发光二极管和平面显示元件的显示元件。 该组合包括基本上平面的显示元件,其中发光二极管位于显示元件的周边上,并且封装支撑件引导二极管的输出基本上平行于显示元件的平面。

    MULTI-CHIP LED DEVICES
    46.
    发明申请
    MULTI-CHIP LED DEVICES 有权
    多芯片LED器件

    公开(公告)号:US20120069564A1

    公开(公告)日:2012-03-22

    申请号:US13017407

    申请日:2011-01-31

    Abstract: Multi-chip LED devices are described. Embodiments of the present invention provide multi-chip LED devices with relatively high efficiency and good color rendering. The LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The optical element may be molded from silicone. The LED chips may be connected in parallel. In some embodiments, the LED device includes a submount, which may be made of a ceramic material such as alumina or aluminum nitride. Wire bonds can be connected to the LED chips so that all the wire bonds tend the outside of a group of LED chips. Various sizes and types of LED chips may be used, including vertical LED chips and sideview LED chips.

    Abstract translation: 描述了多芯片LED器件。 本发明的实施例提供了具有较高效率和良好显色性能的多芯片LED器件。 LED装置包括多个互连的LED芯片和诸如透镜的光学元件。 光学元件可以由硅树脂模制而成。 LED芯片可以并联连接。 在一些实施例中,LED装置包括底座,其可由诸如氧化铝或氮化铝的陶瓷材料制成。 引线键可以连接到LED芯片,使得所有的引线键都趋向于一组LED芯片的外部。 可以使用各种尺寸和类型的LED芯片,包括垂直LED芯片和侧视LED芯片。

    Alternative doping for group III nitride LEDs
    48.
    发明授权
    Alternative doping for group III nitride LEDs 有权
    III族氮化物LED的替代掺杂

    公开(公告)号:US07812354B2

    公开(公告)日:2010-10-12

    申请号:US11567236

    申请日:2006-12-06

    Inventor: David T. Emerson

    Abstract: A light emitting diode is disclosed that is formed in the Group III nitride material system. The diode includes respective n-type and p-type layers for current injection and light emission. At least one n-type Group III nitride layer in the diode has dopants selected from the group consisting of elements with a larger atomic radius than silicon and elements with a larger covalent radius than silicon, with germanium and tellurium being exemplary.

    Abstract translation: 公开了在III族氮化物材料体系中形成的发光二极管。 二极管包括用于电流注入和发光的各自的n型和p型层。 二极管中的至少一个n型III族氮化物层具有选自具有比硅更大的原子半径的元素和具有比硅更大的共价半径的元素的掺杂剂,其中锗和碲是示例性的。

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