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公开(公告)号：US20100244052A1
公开(公告)日：2010-09-30
申请号：US12796365
申请日：2010-06-08
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325
摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
摘要翻译： 公开了一种发光二极管，其包括碳化硅衬底和由衬底上的III族氮化物材料体系形成的发光结构。 该二极管具有大于100,000平方微米的面积，其在20毫安电流下的辐射通量为至少29毫瓦，其主波长为390至540纳米。
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公开(公告)号：US09905731B2
公开(公告)日：2018-02-27
申请号：US12796365
申请日：2010-06-08
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325
摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
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公开(公告)号：US07737459B2
公开(公告)日：2010-06-15
申请号：US11112429
申请日：2005-04-22
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325
摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
摘要翻译： 公开了一种发光二极管，其包括碳化硅衬底和由衬底上的III族氮化物材料体系形成的发光结构。 该二极管具有大于100,000平方微米的面积，其在20毫安电流下的辐射通量为至少29毫瓦，其主波长为390至540纳米。
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4.发明授权公开(公告)号：US09159888B2
公开(公告)日：2015-10-13
申请号：US11899790
申请日：2007-09-07
申请人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
CPC分类号： H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。
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公开(公告)号：US08766298B2
公开(公告)日：2014-07-01
申请号：US13040088
申请日：2011-03-03
CPC分类号： H01L33/54 , H01L33/486 , H01L33/50 , H01L33/60 , H01L2224/48091 , H01L2224/48465 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.
摘要翻译： 公开了一种发光封装二极管，其包括安装在反射封装中的发光二极管，其中与二极管相邻的表面靠近朗伯反射器。 包装中的密封剂由朗伯反射器界定，并且密封剂中的磷光体转换由LED芯片发射的频率，并且与LED芯片发射的频率一起产生白光。 由密封剂形成的基本平坦的弯液面限定了封装二极管的发射表面。
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公开(公告)号：US08425271B2
公开(公告)日：2013-04-23
申请号：US11839562
申请日：2007-08-16
CPC分类号： H01L33/60 , H01L33/486 , H01L33/508 , H01L33/54 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： A method of forming an LED lamp with a desired distribution of phosphor is disclosed. The method includes the steps of mixing a plurality of phosphor particles in an uncured polymer resin for which the viscosity can be controlled in response to temperature to form a substantially uniform suspension of the phosphor particles in the resin. The uncured resin is then placed into a defined position adjacent an LED chip and the temperature of the resin is increased to correspondingly decrease its viscosity but to less than the temperature at which the resin would cure unreasonably quickly. The phosphor particles are encouraged to settle in the lowered-viscosity resin to a desired position with respect to the LED chip, and the temperature of the resin is thereafter increased to the point at which it will cured and solidify.
摘要翻译： 公开了一种形成具有所需分布的荧光体的LED灯的方法。 该方法包括以下步骤：在未固化的聚合物树脂中混合多个荧光体颗粒，根据温度可以控制粘度，以形成荧光体颗粒在树脂中的基本上均匀的悬浮液。 然后将未固化的树脂放置在与LED芯片相邻的限定位置，并且增加树脂的温度以相应地降低其粘度，但是小于树脂不合理地固化的温度。 鼓励荧光体颗粒将低粘度树脂沉降到相对于LED芯片的期望位置，然后将树脂的温度升高至其固化和固化的程度。
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公开(公告)号：US20120153317A1
公开(公告)日：2012-06-21
申请号：US13011609
申请日：2011-01-21
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133608 , H01L24/48 , H01L24/49 , H01L33/486 , H01L33/60 , H01L33/62 , H01L33/642 , H01L2224/29144 , H01L2224/2929 , H01L2224/29399 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2224/83192 , H01L2224/92247 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/01322 , H01L2924/10157 , H01L2924/10158 , H01L2924/12032 , H01L2924/12035 , H01L2924/12041 , H01L2924/181 , H01L2924/0105 , H01L2924/0665 , H01L2224/45099 , H01L2924/00
摘要： Light emitting diode (LED) devices, systems, and methods are disclosed. In one aspect, an illumination panel can be configured to provide backlighting for a liquid crystal display (LCD) panel. The illumination panel can include one or more LEDs arranged in an array. The one or more LEDs can be attached using metal-to-metal die attach methods over an illumination panel, or attached within packages disposed over the illumination panel. In one aspect, the one or more LEDs can be attached using robust metal-to-metal die attach techniques and/or materials disclosed herein.
摘要翻译： 公开了发光二极管（LED）装置，系统和方法。 一方面，照明面板可以被配置为为液晶显示器（LCD）面板提供背光。 照明面板可以包括以阵列布置的一个或多个LED。 一个或多个LED可以使用金属对金属管芯附接方法安装在照明面板上，或者附接在设置在照明面板上的封装内。 在一个方面，可以使用本文公开的鲁棒金属 - 金属管芯附接技术和/或材料来连接一个或多个LED。
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公开(公告)号：US20080251800A1
公开(公告)日：2008-10-16
申请号：US11734218
申请日：2007-04-11
CPC分类号： H01L33/0079 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L33/007
摘要： A method of forming electronic device precursors and devices with reduced cracking in relevant layers is disclosed along with resulting structures. The method includes the steps of growing a transition layer of undoped Group III nitride on a substrate that is other than a Group III nitride, growing an active structure of Group III nitride on the undoped layer, and removing the substrate from the undoped layer.
摘要翻译： 公开了一种在相关层中形成具有减少的开裂的电子器件前体和器件的方法以及所得到的结构。 该方法包括以下步骤：在不同于III族氮化物的衬底上生长未掺杂的III族氮化物的过渡层，在未掺杂层上生长III族氮化物的活性结构，以及从未掺杂层去除衬底。
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公开(公告)号：US08390022B2
公开(公告)日：2013-03-05
申请号：US13347243
申请日：2012-01-10
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , C09K11/7731 , C09K11/7734 , C09K11/7774 , G02B6/0023 , G02B6/0068 , G02B6/0073 , H01L33/486 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/01322 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.
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公开(公告)号：US07649209B2
公开(公告)日：2010-01-19
申请号：US11739307
申请日：2007-04-24
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , C09K11/7731 , C09K11/7734 , C09K11/7774 , G02B6/0023 , G02B6/0068 , G02B6/0073 , H01L33/486 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/01322 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.
摘要翻译： 公开了一种发光二极管。 二极管包括封装支撑件和封装支撑件上的半导体芯片，其中芯片包括在光谱的可见部分中发光的有源区域。 金属触点与封装上的芯片电连通。 基本上透明的密封剂覆盖封装中的芯片。 密封剂中的荧光体发射可见光谱中与芯片发射的频率不同的频率，并响应芯片发出的波长。 还公开了组合发光二极管和平面显示元件的显示元件。 该组合包括基本上平面的显示元件，其中发光二极管位于显示元件的周边上，并且封装支撑件引导二极管的输出基本上平行于显示元件的平面。
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