公开(公告)号：US20100278477A1

公开(公告)日：2010-11-04

申请号：US12746167

申请日：2008-06-03

Applicant: Jeong-Woo Park ,  Gyung-Ock Kim ,  Mi-Ran Park ,  Jong-Bum You

Inventor： Jeong-Woo Park ,  Gyung-Ock Kim ,  Mi-Ran Park ,  Jong-Bum You

IPC: G02B6/12 ,  G02B6/34

CPC classification number: G02F1/218 ,  G02F2001/212 ,  G02F2201/302

Abstract: Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 m to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.

Abstract translation: 提供了一种半导体集成电路。 半导体集成电路包括设置在基板上并且包括光波导部分和一对凹部的半导体图案。 光波导部分的厚度范围为约0.05μm至约0.5μm。 凹部设置在光波导部分的两侧，并且具有比光波导部分更薄的厚度。 第一掺杂区域和第二掺杂区域分别设置在凹部中。 第一和第二掺杂区域分别掺杂有第一导电型掺杂剂和第二导电型掺杂剂。 在至少光波导部分中形成本征区域以接触第一和第二掺杂区域。

公开(公告)号：US20100270589A1

公开(公告)日：2010-10-28

申请号：US12741258

申请日：2008-05-08

Applicant: Dong-Woo Suh ,  Gyung-Ock Kim ,  Sang-Hun Kim

Inventor： Dong-Woo Suh ,  Gyung-Ock Kim ,  Sang-Hun Kim

IPC: H01L31/10 ,  H01L31/0248

CPC classification number: H01L31/105 ,  H01L31/028 ,  H01L31/1812 ,  Y02E10/547

Abstract: Provided is a photodetector converting an optical signal into an electrical signal. The photodetector includes: a plurality of semiconductor layers sequentially stacked on a substrate; a plurality of photoelectric conversion units formed in the semiconductor layers, respectively, and having different spectral sensitivities from each other; and buffer layers interposed between the adjacent semiconductor layers, respectively. Each of the buffer layers alleviates stress between the adjacent semiconductor layers.

Abstract translation: 提供了将光信号转换为电信号的光电检测器。 光电检测器包括：顺序堆叠在基板上的多个半导体层; 分别形成在所述半导体层中并具有彼此不同的光谱灵敏度的多个光电转换单元; 以及分别介于相邻半导体层之间的缓冲层。 每个缓冲层减轻相邻半导体层之间的应力。

公开(公告)号：US20100150499A1

公开(公告)日：2010-06-17

申请号：US12477907

申请日：2009-06-04

Applicant: Duk-Jun Kim ,  Jung-Hyung Pyo ,  Jung-Ho Song ,  In-Gyoo Kim ,  Gyung-Ock Kim

Inventor： Duk-Jun Kim ,  Jung-Hyung Pyo ,  Jung-Ho Song ,  In-Gyoo Kim ,  Gyung-Ock Kim

IPC: G02B6/34 ,  G02B6/26

CPC classification number: G02B6/12011

Abstract: Provided is a photonics device including at least two arrayed waveguide grating structures. Each of the arrayed waveguide grating structures of the photonics device includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler to the output star coupler. Each of the arrayed waveguides includes at least one first section having a high confinement factor and at least two second sections having a low confinement factor. The first sections of the arrayed waveguides have the same structure.

Abstract translation: 提供了包括至少两个阵列波导光栅结构的光子器件。 光子器件的每个阵列波导光栅结构包括输入星形耦合器，输出星形耦合器和将输入星形耦合器光耦合到输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个第一部分和具有低约束因子的至少两个第二部分。 阵列波导的第一部分具有相同的结构。

公开(公告)号：US20100134936A1

公开(公告)日：2010-06-03

申请号：US11816732

申请日：2006-02-17

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-jun Kim ,  Sun-jin Yun ,  Yong-wook Lee ,  Gyung-Ock Kim ,  Doo-Hyeb Youn ,  Jung-Wook Lim

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-jun Kim ,  Sun-jin Yun ,  Yong-wook Lee ,  Gyung-Ock Kim ,  Doo-Hyeb Youn ,  Jung-Wook Lim

IPC: H02H9/04 ,  H02H9/00

CPC classification number: H01L49/003 ,  H01L27/0248

Abstract: Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system.

Abstract translation: 提供了使用突变金属 - 绝缘体转变（MIT）装置的电和/或电子系统保护电路，其可以以大于经由电力线或信号线接收的额定标准电压的电压有效地去除高频噪声 电气和/或电子系统，以及包括电气和/或电子系统保护电路的电气和/或电子系统。 电气和/或电子系统保护电路突然的MIT设备突然连接到电气和/或电子系统以防止噪声。 当施加大于额定标准电压的电压时，电气和/或电子系统保护电路绕过突然的MIT设备，大部分噪声电流产生，从而保护电气和/或电子系统。

公开(公告)号：US20100133585A1

公开(公告)日：2010-06-03

申请号：US12536098

申请日：2009-08-05

Applicant: Sang Hoon Kim ,  Gyung Ock Kim ,  Dong Woo Suh ,  Ji Ho Joo

Inventor： Sang Hoon Kim ,  Gyung Ock Kim ,  Dong Woo Suh ,  Ji Ho Joo

IPC: H01L31/028 ,  C30B23/06

CPC classification number: H01L31/1808 ,  C30B25/10 ,  C30B25/16 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/547

Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.

Abstract translation: 提供一种生长具有负光导特性的锗（Ge）外延薄膜和使用其的光电二极管的方法。 生长锗（Ge）外延薄膜的方法包括在低温下在硅衬底上生长锗（Ge）薄膜，升高温度以生长锗（Ge）薄膜，并使锗（Ge） 在高温下的薄膜，其中每个生长阶段使用减压化学气相沉积（RPCVD）进行。 三阶段生长方法能够形成特征在于在基板上减轻应力，降低的穿透位错密度和降低的表面粗糙度的锗（Ge）外延薄膜。

公开(公告)号：US20090154868A1

公开(公告)日：2009-06-18

申请号：US12117707

申请日：2008-05-08

Applicant: Mi-Ran PARK ,  O-Kyun Kwon ,  Jeong-Woo Park ,  Gyung-Ock Kim

Inventor： Mi-Ran PARK ,  O-Kyun Kwon ,  Jeong-Woo Park ,  Gyung-Ock Kim

IPC: G02F1/295

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2203/02

Abstract: Provided are semiconductor opto-electronic integrated circuits and methods of forming the same. The semiconductor opto-electronic integrated circuit includes: an optical waveguide disposed on a substrate and including an input terminal and an output terminal; an optical grating formed on the optical waveguide; and an optical active device disposed on the optical grating and receiving an optical signal from the optical waveguide through the optical grating to modulate the optical signal.

Abstract translation: 提供半导体光电集成电路及其形成方法。 半导体光电集成电路包括：设置在基板上并包括输入端子和输出端子的光波导; 形成在光波导上的光栅; 以及设置在光栅上的光学有源器件，并通过光栅从光波导接收光信号，以调制光信号。

公开(公告)号：US20090152528A1

公开(公告)日：2009-06-18

申请号：US12118543

申请日：2008-05-09

Applicant: Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

Inventor： Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

IPC: H01L29/06 ,  H01L21/02

CPC classification number: H01L33/0045 ,  H01L33/02

Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。

公开(公告)号：US20090148115A1

公开(公告)日：2009-06-11

申请号：US12111884

申请日：2008-04-29

Applicant: Jong-Moo LEE ,  Duk-Jun KIM ,  O-Kyun KWON ,  Gyung-Ock KIM

Inventor： Jong-Moo LEE ,  Duk-Jun KIM ,  O-Kyun KWON ,  Gyung-Ock KIM

IPC: G02B6/10

CPC classification number: G02B6/12007

Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

Abstract translation: 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

公开(公告)号：US20090103863A1

公开(公告)日：2009-04-23

申请号：US12111917

申请日：2008-04-29

Applicant: Jong-Moo LEE ,  Duk-Jun KIM ,  Kap-Choong KIM ,  Gyung-Ock KIM

Inventor： Jong-Moo LEE ,  Duk-Jun KIM ,  Kap-Choong KIM ,  Gyung-Ock KIM

IPC: G02B6/26

CPC classification number: G02B6/12007

Abstract: Provided is a wavelength-division-multiplexing (WDM) device. The device includes an input waveguide, a plurality of ring resonators around the input waveguide, a plurality of output waveguides around the plurality of ring resonators, respectively, and at least one tuning clad pattern adjacent to at least one of the ring resonators, the tuning clad pattern covering a portion of a surface of a corresponding ring resonator.

Abstract translation: 提供了一种波分复用（WDM）装置。 该装置包括输入波导，围绕输入波导的多个环形谐振器，分别围绕多个环形谐振器的多个输出波导以及与至少一个环形谐振器相邻的至少一个调谐包层图案，调谐 包覆图案覆盖对应的环形谐振器的表面的一部分。

公开(公告)号：US20080075408A1

公开(公告)日：2008-03-27

申请号：US11737255

申请日：2007-04-19

Applicant: In Kui CHO ,  Woo Jin LEE ,  Sang Pil HAN ,  Seung Ho AHN ,  Gyung Ock KIM ,  Hee Kyung Sung

Inventor： In Kui CHO ,  Woo Jin LEE ,  Sang Pil HAN ,  Seung Ho AHN ,  Gyung Ock KIM ,  Hee Kyung Sung

IPC: G02B6/43

CPC classification number: G02B6/43 ,  G02B6/2552 ,  G02B6/4202 ,  G02B6/4239 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00 ,  H01L2924/00014

Abstract: Provided are a method and structure for optical connection between an optical transmitter and an optical receiver. The method includes the steps of: forming on a substrate a light source device, an optical detection device, an optical transmission unit electrically connected with the light source device, and an optical detection unit electrically connected with the optical detection device; preparing a flexible optical transmission-connection medium to optically connect the light source device with the optical detection device; cutting the prepared optical transmission-connection medium and surface-finishing it; and connecting one end of the surface-finished optical transmission-connection medium with the light source device and the other end with the optical detection device. Fabrication of an optical package having a 3-dimensional structure is facilitated and fabrication time is reduced, thus improving productivity. In addition, since the optical transmission-connection medium is directly connected with the light source device and the optical detection device, a polishing operation or additional connection block is not required, thus facilitating mass production.

Abstract translation: 提供了一种用于光发射机和光接收机之间的光连接的方法和结构。 该方法包括以下步骤：在基板上形成光源装置，光检测装置，与光源装置电连接的光传输单元以及与该光检测装置电连接的光检测单元; 准备柔性光传输连接介质以将光源装置与光学检测装置光学连接; 切割准备的光传输连接介质并进行表面处理; 并且将表面光整传输连接介质的一端与光源装置连接，另一端与光学检测装置连接。 促进了具有3维结构的光学封装的制造，并减少了制造时间，从而提高了生产率。 此外，由于光传输连接介质与光源装置和光学检测装置直接连接，因此不需要抛光操作或附加连接块，因此便于批量生产。