Abstract:
A semiconductor processing system has a liquid chemical metering and delivery system including a process tank and a metering vessel. Fluid level detectors detect the fluid level in the process tank and metering vessel. A two stage fill valve fills the metering vessel from bottom to top. A dispense valve dispenses the metered contents of the vessel into a process tank via gravity, to form a chemical solution in the process tank, with high mixing accuracy. The volumes of the metering vessel and process tank and the inflow and outflow rates are set to provide 100% up time to a process chamber which uses the chemical solution to process semiconductor wafers or other flat media.
Abstract:
In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
Abstract:
A processor for processing articles, such as semiconductor wafers, in a substantially clean atmosphere is set forth. The processor includes an enclosure defining a substantially enclosed clean processing chamber and at least one processing station disposed in the processing chamber. An interface section is disposed adjacent an interface end of the enclosure. The interface section includes at least one interface port through which a pod containing articles for processing are loaded or unloaded to or from the processor. The interface section is hygienically separated from the processing chamber since the interface section is generally not as clean as the highly hygienic processing chamber. An article extraction mechanism adapted to seal with the pod is employed. The mechanism is disposed to allow extraction of the articles contained within the pod into the processing chamber without exposing the articles to ambient atmospheric conditions in the interface section. The article processor also preferably includes an article insertion mechanism that is adapted to seal with a pod disposed in the interface section. The article insertion mechanism is disposed to allow insertion of the articles into the pod after processing by the at least one processing station. The article insertion mechanism allows the insertion of the articles without exposing the articles to ambient atmospheric conditions in the interface section.
Abstract:
The present invention provides for a semiconductor workpiece processing tool and methods for handling semiconductor workpiece therein. The semiconductor workpiece processing tool preferably includes an interface section comprising at least one interface module and a processing section comprising a plurality of processing modules for processing the semiconductor workpieces. The semiconductor workpiece processing tool may have a conveyor for transferring the semiconductor workpieces between the interface modules and the processing modules.
Abstract:
A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.
Abstract:
An apparatus for processing a semi-conductor wafer or similar workpiece has one or more liquid outlets for applying a heated process liquid to the wafer within a process chamber. Ozone gas is provided into the chamber directly, or via the processed liquid. Sonic energy is introduced to the workpiece through a layer of liquid. In an alternative design, the wafers are immersed in heated process liquid, and an ozone atmosphere is provided above the liquid. The wafers are then lifted out of the liquid, or the liquid is alternatively drained off. The ozone gas/liquid interface passes down across the surfaces of the wafers.
Abstract:
A workpiece support and an apparatus including such a workpiece support are set forth. The workpiece support includes a set of grooved members for supporting a series of workpieces. The workpieces may be similarly shaped, e.g. circular or rectangular, and similarly sized, each having a front face and a back face. An outer perimeter of each workpiece may be beveled at both faces, beveled at one face, unbeveled, convex, or concave. Each grooved member has a series of similar grooves. Being adapted to receive such a workpiece, each groove has a bearing wall and a wedging wall shaped and oriented so that a line normal to the wedging wall intersects but is not normal to the bearing wall. For many applications, two grooved members are employed, which are parallel to one another, spaced from one another, and oriented so that the grooves of the grooved members are generally aligned. To this end, a first grooved member is oriented so that the front faces of the received workpieces bear against the bearing walls of the grooves of the first grooved member and so that the received workpieces touch the wedging walls of the grooves of the first grooved member. A second grooved member is oriented so that the back faces of the received workpieces bear against the bearing walls of the grooves of the second grooved member and so that the received workpieces touch the wedging walls of the grooves of the second grooved member. Thus, the workpieces received by the grooves of the grooved members are wedged so as not to tip, shake, or wobble.
Abstract:
In a method for rinsing and drying a semiconductor workpiece in a micro-environment, the workpiece is placed into a rinser/dryer housing. The rinser/dryer housing is rotated by a rotor motor. The rinser/dryer housing defines a substantially closed rinser/dryer chamber. Rinsing and drying fluids are distributed across at least one face of the semiconductor workpiece by the action of centrifugal force generated during rotation of the housing. A fluid supply system is connected to sequentially supply a rinsing fluid followed by a drying fluid to the chamber as the housing is rotated.
Abstract:
A process and apparatus for drying semiconductor wafers, includes the controlled-rate extraction of a wafer immersed in rinsing liquid, irradiation of the wafer using high intensity lights or filaments along the wafer-liquid interface, and delivery of gas streams against the wafer along the wafer-liquid interface using a gas delivery system. Heating is controlled to create a temperature gradient without evaporating rinsing fluid adhering to surfaces of the wafer. Heating by the radiation sources creates a temperature gradient in the wafer in the irradiated region that simultaneously generates a surface tension gradient in the water adhering to the wafer. The gas delivery system removes the bulk of the water adhering to the wafer surface, and also suppresses the height of the rinsing liquid adhering to the wafer, providing faster extraction of dry and highly clean wafers from the rinsing liquid. A solvent vapor is optionally injected at the wafer-liquid interface, to reduce adhesion of the liquid to the vapor.
Abstract:
In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or jet impinging on the workpiece. The process gas, which may be ozone, is entrained in the liquid via entrainment nozzles. Use of entrainment and diffusion together increases the amount of gas available for reaction at the workpiece surface, increases the reaction rate, and decreases required process times.