公开(公告)号：US06764958B1

公开(公告)日：2004-07-20

申请号：US09627667

申请日：2000-07-28

Applicant: Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

Inventor： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC: H01L2131

CPC classification number: H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract translation: 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US08980754B2

公开(公告)日：2015-03-17

申请号：US13187357

申请日：2011-07-20

Applicant: Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

Inventor： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/31138 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L2221/1063

Abstract: Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.

Abstract translation: 描述了从低k电介质膜去除光致抗蚀剂的方法。 例如，一种方法包括在低k电介质层之上形成和图案化光致抗蚀剂层，低k电介质层设置在衬底之上。 沟槽形成在低k电介质层的露出部分。 执行多个处理循环以去除光致抗蚀剂层。 每个处理循环包括在低k电介质层的沟槽的表面上形成硅源层，并且将光致抗蚀剂层暴露于氧源以在低介电层的沟槽的表面上形成含Si-O的层， k电介质层并去除光致抗蚀剂层的至少一部分。

公开(公告)号：US08871650B2

公开(公告)日：2014-10-28

申请号：US13646113

申请日：2012-10-05

Applicant: Srinivas D. Nemani ,  Nicolas J. Bright ,  Thorsten B. Lill ,  Yifeng Zhou ,  Jamie Saephan ,  Ellie Yieh

Inventor： Srinivas D. Nemani ,  Nicolas J. Bright ,  Thorsten B. Lill ,  Yifeng Zhou ,  Jamie Saephan ,  Ellie Yieh

IPC: H01L21/302 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76826 ,  H01L2221/1063

Abstract: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.

Abstract translation: 描述了低k电介质膜的后蚀刻处理（PET）。 例如，图案化低k电介质膜的方法包括用第一等离子体工艺蚀刻设置在衬底上方的低k电介质层。 蚀刻涉及在低k电介质层上形成碳氟聚合物。 低k电介质层用第二等离子体工艺进行表面调节。 表面处理除去碳氟聚合物，并在低k电介质层上形成含有Si-O的保护层。 用第三等离子体工艺除去含Si-O的保护层。

公开(公告)号：US20140017898A1

公开(公告)日：2014-01-16

申请号：US13922543

申请日：2013-06-20

Applicant: Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01J37/32357 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract translation: 描述了低k介电膜图案的方法。 在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层。 低k电介质层设置在衬底之上。 该方法还涉及用等离子体处理来修饰低k电介质层的暴露部分。 该方法在相同的操作中还涉及用远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分选择。

公开(公告)号：US20130109187A1

公开(公告)日：2013-05-02

申请号：US13646113

申请日：2012-10-05

Applicant: Srinivas D. Nemani ,  Nicolas J. Bright ,  Thorsten B. Lill ,  Yifeng Zhou ,  Jamie Saephan ,  Ellie Yieh

Inventor： Srinivas D. Nemani ,  Nicolas J. Bright ,  Thorsten B. Lill ,  Yifeng Zhou ,  Jamie Saephan ,  Ellie Yieh

IPC: H01L21/3065

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76826 ,  H01L2221/1063

Abstract: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.

Abstract translation: 描述了低k电介质膜的后蚀刻处理（PET）。 例如，图案化低k电介质膜的方法包括用第一等离子体工艺蚀刻设置在衬底上方的低k电介质层。 蚀刻涉及在低k电介质层上形成碳氟聚合物。 低k电介质层用第二等离子体工艺进行表面调节。 表面处理除去碳氟聚合物，并在低k电介质层上形成含有Si-O的保护层。 用第三等离子体工艺除去含Si-O的保护层。

公开(公告)号：US20130040464A1

公开(公告)日：2013-02-14

申请号：US13653177

申请日：2012-10-16

Applicant: Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. Pender

Inventor： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. Pender

IPC: H01L21/302

CPC classification number: H01L21/31138 ,  H01L21/3105 ,  H01L21/76814 ,  H01L2221/1063

Abstract: Methods of patterning low-k dielectric films are described.

Abstract translation: 描述了低k介电膜图案的方法。

公开(公告)号：US20130023124A1

公开(公告)日：2013-01-24

申请号：US13187224

申请日：2011-07-20

Applicant: Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

Inventor： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

IPC: H01L21/316 ,  H01L21/3105

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

Abstract: Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract translation: 描述了低k介电膜图案的方法。 例如，一种方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。 低等离子体介质层的露出部分用等离子体工艺进行改性。 低k电介质层的修改部分被选择性地去除低k电介质层的掩模层和未修饰部分。

公开(公告)号：US08242031B2

公开(公告)日：2012-08-14

申请号：US12891426

申请日：2010-09-27

Applicant: Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Ellie Yieh

Inventor： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Ellie Yieh

IPC: H01L21/31

CPC classification number: C23C16/345 ,  C23C16/452 ,  C23C16/56

Abstract: A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.

Abstract translation: 一种在衬底上沉积含硅和氮的膜的方法。 该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。 该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。 此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。 此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。

公开(公告)号：US07541297B2

公开(公告)日：2009-06-02

申请号：US11876541

申请日：2007-10-22

Applicant: Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

Inventor： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

IPC: H01L21/469 ,  H01L21/31

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/24 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76837

Abstract: A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

Abstract translation: 在基板上形成氧化硅层的方法。 该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。 该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。 此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。 至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

公开(公告)号：US20090104791A1

公开(公告)日：2009-04-23

申请号：US11876664

申请日：2007-10-22

Applicant: Srinivas D. Nemani ,  Abhijit Basu Mallick ,  Ellie Y. Yieh

Inventor： Srinivas D. Nemani ,  Abhijit Basu Mallick ,  Ellie Y. Yieh

IPC: H01L21/31

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/31633

Abstract: A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.

Abstract translation: 在衬底上沉积氧化硅层的方法包括向沉积室提供衬底。 第一含硅前体，第二含硅前体和NH 3等离子体反应形成氧化硅层。 第一含硅前体包括Si-H键和Si-Si键中的至少一种。 第二含硅前体包括至少一个Si-N键。 沉积的氧化硅层退火。