公开(公告)号：US20150348746A1

公开(公告)日：2015-12-03

申请号：US14822172

申请日：2015-08-10

Applicant: TEL Epion Inc.

Inventor： Hongyu H. Yue ,  Noel Russell ,  Vincent Gizzo ,  Joshua LaRose ,  Steven P. Caliendo

IPC: H01J37/20 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/30483

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

公开(公告)号：US20150243476A1

公开(公告)日：2015-08-27

申请号：US14492819

申请日：2014-09-22

Applicant: TEL Epion Inc.

Inventor： Vincent Lagana-Gizzo ,  Noel Russell ,  Joshua LaRose ,  Soo Doo Chae

IPC: H01J37/304 ,  H01J37/30

CPC classification number: H01J37/304 ,  H01J37/3005 ,  H01J37/3053 ,  H01J2237/08 ,  H01J2237/30455 ,  H01J2237/3151 ,  H01J2237/317

Abstract: A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.

Abstract translation: 描述了使用气体簇离子束（GCIB）修饰工件的上层的方法。 该方法包括收集与工件的上层相关的参数数据，以及通过使用参数数据确定用于将GCIB应用于上层以改变测量属性的初始简档的预测的系统误差响应。 另外，该方法包括至少部分地基于预测的系统误差响应和参数数据来识别所测量的属性的目标轮廓，将GCIB引向工件的上层，以及空间调制GCIB的应用属性 ，作为工件上层位置的函数，以达到测量属性的目标轮廓。

公开(公告)号：US09029808B2

公开(公告)日：2015-05-12

申请号：US14444791

申请日：2014-07-28

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn ,  Avrum Freytsis ,  Jerry Negrotti ,  Robert K. Becker

IPC: H01J37/20 ,  G21K5/08 ,  H01J37/317

CPC classification number: H01J37/20 ,  G21K5/08 ,  H01J37/317 ,  H01J2237/20228 ,  H01J2237/20235 ,  H01J2237/20278

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus. The apparatus further includes shields and other features for reducing process contamination resulting from scattering of the GCIB from the scanning apparatus.

Abstract translation: 公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。 该装置还包括屏蔽件和其它特征，用于减少GCIB从扫描装置散射而产生的工艺污染。

公开(公告)号：US20140332696A1

公开(公告)日：2014-11-13

申请号：US14444791

申请日：2014-07-28

Applicant: TEL EPION Inc.

Inventor： Matthew C. GWINN ,  Avrum FREYTSIS

IPC: H01J37/20 ,  G21K5/08

CPC classification number: H01J37/20 ,  G21K5/08 ,  H01J37/317 ,  H01J2237/20228 ,  H01J2237/20235 ,  H01J2237/20278

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus. The apparatus further includes shields and other features for reducing process contamination resulting from scattering of the GCIB from the scanning apparatus.

Abstract translation: 公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。 该装置还包括屏蔽件和其它特征，用于减少GCIB从扫描装置散射而产生的工艺污染。

公开(公告)号：US08722542B2

公开(公告)日：2014-05-13

申请号：US13841388

申请日：2013-03-15

Applicant: TEL Epion Inc.

Inventor： Christopher K. Olsen ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76831 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.

Abstract translation: 描述了用于对基板的高纵横比特征的底部的层进行图案化的方法。 该方法包括提供具有覆盖第二层的特征图案的第一层的衬底。 特征图案的特征在于初始临界尺寸（CD），初始角形轮廓以及纵横比为5：1或更大。 该方法还包括蚀刻穿过特征图案底部的第二层的至少一部分，以将特征图案至少部分地延伸到第二层中，同时将最终的CD保持在初始CD的阈值内，并且最后的角廓线 在使用气体簇离子束（GCIB）蚀刻工艺的初始拐角分布的阈值内。

公开(公告)号：US08703607B2

公开(公告)日：2014-04-22

申请号：US13888924

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/20

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract translation: 对半导体装置的制造方法进行说明。 该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

公开(公告)号：US20130075366A1

公开(公告)日：2013-03-28

申请号：US13678972

申请日：2012-11-16

Applicant: TEL EPION INC.

Inventor： John J. Hautala

IPC: B44C1/22

CPC classification number: B44C1/227 ,  H01J2237/0812 ,  H01L21/02019

Abstract: A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

Abstract translation: 描述了一种处理工件的方法。 该方法包括从与工件表面轮廓有关的计量数据中计算校正数据，使用气体簇离子束（GCIB）根据校正数据调整表面轮廓，并且通过执行GCIB之后的蚀刻工艺来进一步调节表面轮廓 调整。