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    Semiconductor device manufacturing method to form resist pattern
    41.
    发明授权
    Semiconductor device manufacturing method to form resist pattern 失效
    形成抗蚀剂图案的半导体器件制造方法

    公开(公告)号：US07968272B2

    公开(公告)日：2011-06-28

    申请号：US11600198

    申请日：2006-11-16

    申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    IPC分类号： G03C5/04

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

    摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

    Resist pattern forming method and manufacturing method of semiconductor device
    42.
    发明授权
    Resist pattern forming method and manufacturing method of semiconductor device 失效
    半导体器件的抗蚀图案形成方法和制造方法

    公开(公告)号：US07687227B2

    公开(公告)日：2010-03-30

    申请号：US11316898

    申请日：2005-12-27

    申请人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

    IPC分类号： G03F7/26

    CPC分类号： G03F7/11 ,  G03F7/2041

    摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.

    摘要翻译： 根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为 第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触 第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

    Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus
    43.
    发明申请
    Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus 失效
    形成抗蚀剂图案的半导体器件制造方法以及基板处理装置

    公开(公告)号：US20070128554A1

    公开(公告)日：2007-06-07

    申请号：US11600198

    申请日：2006-11-16

    申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

    摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

    Pattern forming method and method of manufacturing semiconductor device
    44.
    发明申请
    Pattern forming method and method of manufacturing semiconductor device 失效
    图案形成方法和制造半导体器件的方法

    公开(公告)号：US20060263726A1

    公开(公告)日：2006-11-23

    申请号：US11431823

    申请日：2006-05-11

    申请人： Shinichi Ito ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Yasunobu Onishi

    发明人： Shinichi Ito ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Yasunobu Onishi

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10S430/162

    摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.

    摘要翻译： 图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光 通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质， 通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

    Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device
    45.
    发明申请
    Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device 失效
    图案形成方法，下层膜形成组合物和半导体器件的制造方法

    公开(公告)号：US20060115990A1

    公开(公告)日：2006-06-01

    申请号：US11270621

    申请日：2005-11-10

    申请人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

    发明人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0337

    摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

    摘要翻译： 根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜， 下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到 下层膜形成下层膜图案。

    Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same
    46.
    发明授权
    Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same 失效
    具有均匀的组分浓度分布的光敏组合物和使用其的图案形成方法

    公开(公告)号：US06703181B1

    公开(公告)日：2004-03-09

    申请号：US08709879

    申请日：1996-09-09

    申请人： Takao Hayashi ,  Yasunobu Onishi ,  Kazuo Sato ,  Kenji Chiba ,  Masataka Miyamura

    发明人： Takao Hayashi ,  Yasunobu Onishi ,  Kazuo Sato ,  Kenji Chiba ,  Masataka Miyamura

    IPC分类号： G03C176

    CPC分类号： C08K5/3472 ,  C08K5/13 ,  C08K5/175 ,  G03F7/0045 ,  G03F7/039

    摘要： There is provided a photosensitive composition suitable for a resist material. This photosensitive composition has a high sensitivity and a high resolution with respect to a light source having a short wavelength, does not cause a phase separation in a film state, and makes it possible to stably form fine resist patterns. The photosensitive composition contains a polymer obtained by protecting an alkali-soluble group of an alkali-soluble polymer by a group which is unstable with respect to an acid, a compound which generates an acid upon being irradiated with light, at least one compound which is selected from the group consisting of an imidazole compound, an alanine compound, an adenine compound, an adenosine compound, and a quaternary ammonium salt compound, and which increases miscibility in a resist film, and a phenol compound.

    摘要翻译： 提供了适用于抗蚀剂材料的光敏组合物。 这种光敏组合物相对于具有短波长的光源具有高灵敏度和高分辨率，不会在膜状态下引起相分离，并且使得可以稳定地形成精细的抗蚀剂图案。 感光性组合物含有通过相对于酸不稳定的基团，被光照射时产生酸的化合物保护碱溶性聚合物而获得的聚合物，至少一种化合物是 选自咪唑化合物，丙氨酸化合物，腺嘌呤化合物，腺苷化合物和季铵盐化合物，并且增加抗蚀剂膜和酚化合物的混溶性。

    Method of forming a resist pattern
    47.
    发明授权
    Method of forming a resist pattern 失效
    形成抗蚀剂图案的方法

    公开(公告)号：US06225033B1

    公开(公告)日：2001-05-01

    申请号：US09413543

    申请日：1999-10-06

    申请人： Yasunobu Onishi ,  Kentaro Matsunaga ,  Shoji Mimotogi ,  Katsuya Okumura

    发明人： Yasunobu Onishi ,  Kentaro Matsunaga ,  Shoji Mimotogi ,  Katsuya Okumura

    IPC分类号： G03F730

    CPC分类号： G03F7/38

    摘要： An anti-reflection film has been formed on an SiO2 film on a silicon substrate formed on a silicon wafer. A chemical amplification positive resist is formed on the anti-reflection film. The resist is exposed to light. Vapor of strong alkali is applied to a surface of the chemical amplification positive resist. The entire resist is developed with a developing solution, thereby forming a resist pattern.

    摘要翻译： 在形成在硅晶片上的硅衬底上的SiO 2膜上形成防反射膜。 在抗反射膜上形成化学放大正光刻胶。 抗蚀剂曝光。 强碱的蒸气被施加到化学放大正性抗蚀剂的表面。 整个抗蚀剂用显影液显影，从而形成抗蚀剂图案。

    Composition for underlying film and method of forming a pattern using the film
    48.
    发明授权
    Composition for underlying film and method of forming a pattern using the film 失效
    用于底膜的组合物和使用该膜形成图案的方法

    公开(公告)号：US6054254A

    公开(公告)日：2000-04-25

    申请号：US108967

    申请日：1998-07-02

    申请人： Yasuhiko Sato ,  Yasunobu Onishi

    发明人： Yasuhiko Sato ,  Yasunobu Onishi

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20 ,  G03C5/56 ,  G03C1/76

    CPC分类号： G03F1/78 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/091 ,  G03F7/095 ,  G03F7/0035 ,  G03F7/2063

    摘要： A method of forming a pattern which comprises the steps of forming an underlying film on a work film, forming a resist film on the underlying film, exposing the underlying film and the resist film to a patterning exposure light, and developing predetermined regions thus exposed of the resist film and the underlying film with a developing solution. The underlying film has a property that the solubility thereof to the developing solution can be changed by an action of an acid. The resist film and/or the underlying film contains a compound which is capable of generating the acid.

    摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成下面的膜，在下面的膜上形成抗蚀剂膜，将下面的膜和抗蚀剂膜暴露于图案化曝光光，并将由此露出的预定区域 抗蚀剂膜和具有显影溶液的底层膜。 底层膜具有通过酸的作用可以改变其对显影液的溶解性的性质。 抗蚀剂膜和/或底层膜含有能够产生酸的化合物。