公开(公告)号：US07727881B1

公开(公告)日：2010-06-01

申请号：US11709293

申请日：2007-02-20

申请人： Kaushik Chattopadhyay ,  Bart van Schravendijk

发明人： Kaushik Chattopadhyay ,  Bart van Schravendijk

IPC分类号： H01L21/4763

CPC分类号： H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

摘要翻译： 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

公开(公告)号：US07067440B1

公开(公告)日：2006-06-27

申请号：US10890655

申请日：2004-07-13

申请人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

发明人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

IPC分类号： H01L21/00

CPC分类号： C23C16/401 ,  C23C16/045

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

公开(公告)号：US09257302B1

公开(公告)日：2016-02-09

申请号：US13461287

申请日：2012-05-01

申请人： Feng Wang ,  Brian Lu ,  Nerissa Draeger ,  Vishal Gauri ,  Raashina Humayun ,  Michal Danek ,  Bart van Schravendijk ,  Lakshminarayana Nittala

发明人： Feng Wang ,  Victor Y. Lu ,  Brian Lu ,  Wai-Fan Yau ,  Nerissa Draeger ,  Vishal Gauri ,  Raashina Humayun ,  Michal Danek ,  Bart van Schravendijk ,  Lakshminarayana Nittala

IPC分类号： H01L21/316

CPC分类号： H01L21/76224 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02323

摘要： Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.

摘要翻译： 提供了通过产生可流动的含氧化硅膜在基板上填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙。 在某些实施方案中，该方法包括在形成膜中使用催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。

公开(公告)号：US08846536B2

公开(公告)日：2014-09-30

申请号：US13493936

申请日：2012-06-11

申请人： Nerissa Draeger ,  Karena Shannon ,  Bart van Schravendijk ,  Kaihan Ashtiani

发明人： Nerissa Draeger ,  Karena Shannon ,  Bart van Schravendijk ,  Kaihan Ashtiani

IPC分类号： H01L21/311

CPC分类号： H01L21/0234 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02299 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/31111

摘要： Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

摘要翻译： 本文提供了集成兼容的介电膜以及它们的沉积和修饰方法。 根据各种实施方案，该方法可以包括以集成兼容的处理方法沉积靶向特定膜特性的可流动电介质膜和/或对这些性质的修饰。 在某些实施方案中，提供了沉积和修饰具有可调湿蚀刻速率和其它性质的可流动介电膜的方法。 湿法蚀刻速率可以通过整合兼容的处理工艺进行整合。 处理过程的实例包括等离子体暴露和紫外线照射。

公开(公告)号：US08728958B2

公开(公告)日：2014-05-20

申请号：US12964110

申请日：2010-12-09

申请人： Kaihan Ashtiani ,  Michael Wood ,  John Drewery ,  Naohiro Shoda ,  Bart van Schravendijk ,  Lakshminarayana Nittala ,  Nerissa Draeger

发明人： Kaihan Ashtiani ,  Michael Wood ,  John Drewery ,  Naohiro Shoda ,  Bart van Schravendijk ,  Lakshminarayana Nittala ,  Nerissa Draeger

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/76224

摘要： Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.

摘要翻译： 提供了包括沉积可流动氧化物膜和高密度等离子体化学气相沉积氧化物（HDP氧化物）膜的新型间隙填充方案。 根据各种实施方案，可流动的氧化物膜可以用作牺牲层和/或用作自底向上间隙填充的材料。 在某些实施例中，填充间隙的顶表面是HDP氧化物膜。 所得到的填充间隙可以仅用HDP氧化物膜或HDP氧化物和可流动氧化物膜的组合填充。 这些方法提供了改进的顶帽减少并且避免了限定间隙的结构的限制。

公开(公告)号：US20130189854A1

公开(公告)日：2013-07-25

申请号：US13414619

申请日：2012-03-07

申请人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

公开(公告)号：US08242028B1

公开(公告)日：2012-08-14

申请号：US11696102

申请日：2007-04-03

申请人： Bart van Schravendijk ,  Christian Denisse

发明人： Bart van Schravendijk ,  Christian Denisse

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC分类号： H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834

摘要： A method for the ultraviolet (UV) treatment of etch stop and hard mask film increases etch selectivity and hermeticity by removing hydrogen, cross-linking, and increasing density. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing an etch stop film or a hard mask film on a substrate and exposing the film to UV radiation and optionally thermal energy. The UV exposure may be direct or through another dielectric layer.

摘要翻译： 用于蚀刻停止和硬掩模膜的紫外（UV）处理的方法通过除去氢，交联和增加密度来提高蚀刻选择性和气密性。 该方法特别适用于镶嵌加工的上下文。 一种方法提供了通过在衬底上沉积蚀刻停止膜或硬掩模膜并将膜暴露于UV辐射和任选的热能来形成半导体器件。 UV曝光可以是直接的或通过另一个介电层。

公开(公告)号：US08133797B2

公开(公告)日：2012-03-13

申请号：US12122614

申请日：2008-05-16

申请人： Bart van Schravendijk ,  Richard S. Hill ,  Wilbert van den Hoek ,  Harald te Nijenhuis

发明人： Bart van Schravendijk ,  Richard S. Hill ,  Wilbert van den Hoek ,  Harald te Nijenhuis

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  C23C16/045 ,  C23C16/401 ,  H01L21/76801

摘要： In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective layer is deposited to protect underlying features in regions of the substrate having lower feature density so that unwanted material may be removed from regions of the substrate having higher feature density. This protective layer may deposits thicker on a low density feature than on a high density feature and may be deposited using a PECVD process or low sputter/deposition ratio HDP CVD process. This protective layer may also be a metallic oxide layer that is resistant to fluorine etching, such as zirconium oxide (ZrO2) or aluminum oxide (Al2O3).

摘要翻译： 可以填充高纵横比（通常至少6:1，例如7:1或更高），窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙的原位半导体工艺，而不损坏底层特征和少量 或者不提供空隙或弱点的发生。 沉积保护层以保护具有较低特征密度的衬底区域中的底层特征，使得可以从具有较高特征密度的衬底的区域去除不需要的材料。 该保护层可以在低密度特征上比在高密度特征上沉积更厚，并且可以使用PECVD工艺或低溅射/沉积比HDP CVD工艺沉积。 该保护层也可以是耐氟蚀刻的金属氧化物层，例如氧化锆（ZrO 2）或氧化铝（Al 2 O 3）。

公开(公告)号：US08124522B1

公开(公告)日：2012-02-28

申请号：US12082496

申请日：2008-04-11

申请人： Hui-Jung Wu ,  Kimberly Shafi ,  Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Girish Dixit ,  Bart van Schravendijk ,  Elizabeth Apen

发明人： Hui-Jung Wu ,  Kimberly Shafi ,  Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Girish Dixit ,  Bart van Schravendijk ,  Elizabeth Apen

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are methods of stabilizing an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer. Methods include modulating the optical properties reduces the effects of UV radiation on the dielectric diffusion barrier layer. The dielectric diffusion barrier can be made to absorb less UV radiation. A dielectric layer with UV absorbing properties may also be added on top of the diffusion barrier layer so less UV is transmitted. Both methods result in reduced interaction between UV radiation and the dielectric diffusion barrier.

摘要翻译： 提供了在沉积期间稳定底层电介质扩散阻挡层的方法，以及覆盖介电层的紫外线（UV）处理。 方法包括调制光学特性降低了UV辐射对介电扩散阻挡层的影响。 可以使电介质扩散阻挡层吸收较少的UV辐射。 具有UV吸收特性的电介质层也可以添加到扩散阻挡层的顶部，因此传输较少的UV。 两种方法都会降低紫外线辐射与介电扩散阻挡层之间的相互作用。

公开(公告)号：US07851232B2

公开(公告)日：2010-12-14

申请号：US11590661

申请日：2006-10-30

申请人： Bart van Schravendijk ,  William Crew

发明人： Bart van Schravendijk ,  William Crew

IPC分类号： H01L21/00

CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76825

摘要： A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

摘要翻译： 一种用于紫外线（UV）处理含碳低k电介质的方法可以进行过程诱导的损伤修复。 该方法特别适用于镶嵌加工的上下文。 一种方法提供了通过在衬底上沉积含碳的低k电介质层并在低k电介质层中形成沟槽来形成半导体器件，所述沟槽具有以底部结束的侧壁。 然后将沟槽暴露于UV辐射和任选的-CH 3基团的气相源，以修复由沟槽形成过程（通常为蚀刻，灰化）引起的沟槽侧壁和底部的含碳低k材料的损伤， 和湿或干洗）。 可以使用具有或不具有-CH 3基团的气相源的类似处理来修复在随后的平坦化操作中引起的损伤。