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    Memory system with shared file system
    41.
    发明授权
    Memory system with shared file system 有权
    具有共享文件系统的内存系统

    公开(公告)号：US09535628B2

    公开(公告)日：2017-01-03

    申请号：US14050737

    申请日：2013-10-10

    Applicant: Apple Inc.

    Inventor： Etai Zaltsman ,  Sasha Paley ,  Avraham Poza Meir

    IPC: G06F12/02 ,  G06F3/06 ,  G06F17/30 ,  G06F12/08

    CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0658 ,  G06F3/0661 ,  G06F3/0671 ,  G06F3/0679 ,  G06F12/0246 ,  G06F12/0253 ,  G06F12/0833 ,  G06F17/30218 ,  G06F2212/621

    Abstract: An apparatus includes a non-volatile memory and a processor. The processor is configured to receive, from a host, commands for storage of data in the non-volatile memory, to further receive from the host, for storage in the non-volatile memory, File System (FS) information that specifies organization of the data in a FS of the host, to receive from the host a directive that grants the processor permission and capability to access and modify the FS information, and to access the FS information, using the directive, so as to manage the storage of the data in the non-volatile memory.

    Abstract translation: 一种装置包括非易失性存储器和处理器。 处理器被配置为从主机接收用于在非易失性存储器中存储数据的命令，以进一步从主机接收用于存储在非易失性存储器中的文件系统（FS）信息，所述文件系统（FS）信息指定 在主机的FS中的数据，从主机接收授权处理器许可和访问和修改FS信息的能力的指令，以及使用该指令访问FS信息，以便管理数据的存储 在非易失性存储器中。

    Mitigation of retention drift in charge-trap non-volatile memory
    42.
    发明授权
    Mitigation of retention drift in charge-trap non-volatile memory 有权
    减少电荷陷阱非易失性存储器中的滞留漂移

    公开(公告)号：US09490023B2

    公开(公告)日：2016-11-08

    申请号：US14219315

    申请日：2014-03-19

    Applicant: Apple Inc.

    Inventor： Naftali Sommer ,  Avraham Poza Meir ,  Yoav Kasorla ,  Eyal Gurgi

    IPC: G11C16/34 ,  G11C7/02 ,  G11C7/04

    CPC classification number: G11C16/3404 ,  G11C7/02 ,  G11C7/04

    Abstract: A method includes storing data values in a group of memory cells that share a common isolating layer, by producing quantities of electrical charge representative of the data values at respective regions of the common isolating layer that are associated with the memory cells. A function, which relates a drift of the electrical charge in a given memory cell in the group to the data values stored in one or more other memory cells in the group, is estimated. The drift is compensated for using the estimated function.

    Abstract translation: 一种方法包括通过产生表示与存储器单元相关联的公共隔离层的各个区域处的数据值的电荷量来将数据值存储在共享公共隔离层的一组存储器单元中。 估计将组中的给定存储单元中的电荷的漂移与存储在组中的一个或多个其他存储单元中的数据值相关联的功能。 使用估计功能补偿漂移。

    Mitigation of data retention drift by programming neighboring memory cells
    43.
    发明授权
    Mitigation of data retention drift by programming neighboring memory cells 有权
    通过编程相邻的存储单元减少数据保留漂移

    公开(公告)号：US09401212B2

    公开(公告)日：2016-07-26

    申请号：US14822992

    申请日：2015-08-11

    Applicant: Apple Inc.

    Inventor： Avraham Poza Meir ,  Eyal Gurgi ,  Naftali Sommer ,  Yoav Kasorla

    IPC: G11C16/10 ,  G11C16/04 ,  G11C11/56 ,  G11C16/34

    CPC classification number: G11C16/10 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/3418 ,  G11C16/3427

    Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

    Abstract translation: 一种方法包括在共享公共隔离层并存储在公共隔离层中的代表数据值的电荷量的多个存储器单元中，分配用于数据存储的第一组存储器单元，以及分配第二组 用于保护存储在第一组中的电荷的存储单元不保持漂移。 数据存储在第一组的存储单元中。 防止第一组的存储单元中保持漂移的电荷的保护量被存储在第二组的存储单元中。

    Programming schemes for 3-D non-volatile memory
    45.
    发明授权
    Programming schemes for 3-D non-volatile memory 有权
    3-D非易失性存储器的编程方案

    公开(公告)号：US09263135B2

    公开(公告)日：2016-02-16

    申请号：US13804427

    申请日：2013-03-14

    Applicant: Apple Inc.

    Inventor： Yoav Kasorla ,  Avraham Poza Meir ,  Eyal Gurgi

    IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34

    CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3427

    Abstract: A method includes providing data for storage in a memory, which includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines, and a third dimension associated with sections. The data is stored in the memory cells in accordance with a programming order that alternates among the sections, including storing a first portion of the data in a first section, then storing a second portion of the data in a second section different from the first section, and then storing a third portion of the data in the first section.

    Abstract translation: 一种方法包括提供用于存储在存储器中的数据，其包括以具有与位线相关联的第一维度的三维（3-D）配置布置的多个模拟存储器单元，与字线相关联的第二维度，以及第三维度 与部分相关联。 根据在这些部分之间交替的编程顺序将数据存储在存储器单元中，包括在第一部分中存储数据的第一部分，然后将数据的第二部分存储在与第一部分不同的第二部分中 ，然后将数据的第三部分存储在第一部分中。

    Uneven wear leveling in analog memory devices
    46.
    发明授权
    Uneven wear leveling in analog memory devices 有权
    模拟存储设备中的均匀磨损均衡

    公开(公告)号：US09262315B2

    公开(公告)日：2016-02-16

    申请号：US13935746

    申请日：2013-07-05

    Applicant: Apple Inc.

    Inventor： Avraham Poza Meir ,  Eyal Gurgi ,  Shai Ojalvo ,  Yoav Kasorla ,  Naftali Sommer

    IPC: G06F12/00 ,  G06F12/02

    CPC classification number: G06F12/0246 ,  G06F2212/7211

    Abstract: A method for data storage in a memory that includes multiple analog memory cells, includes defining, based on a characteristic of the memory cells, an uneven wear leveling scheme that programs and erases at least first and second subsets of the memory cells with respective different first and second Programming and Erasure (P/E) rates. Data is stored in the memory in accordance with the uneven wear leveling scheme.

    Abstract translation: 一种用于在包括多个模拟存储器单元的存储器中的数据存储的方法，包括基于所述存储器单元的特性定义不均匀磨损平衡方案，所述不均匀磨损均衡方案以相应不同的第一方式来编程和擦除所述存储器单元的至少第一和第二子集 和第二个编程和擦除（P / E）率。 根据不均匀的磨损均衡方案将数据存储在存储器中。

    Mitigation of data retention drift by progrmming neighboring memory cells
    48.
    发明授权
    Mitigation of data retention drift by progrmming neighboring memory cells 有权
    通过编制相邻存储单元来缓解数据保留漂移

    公开(公告)号：US09136003B1

    公开(公告)日：2015-09-15

    申请号：US14249403

    申请日：2014-04-10

    Applicant: Apple Inc.

    Inventor： Avraham Poza Meir ,  Eyal Gurgi ,  Naftali Sommer ,  Yoav Kasorla

    IPC: G11C11/34 ,  G11C16/10 ,  G11C16/04

    CPC classification number: G11C16/10 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/3418 ,  G11C16/3427

    Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

    Abstract translation: 一种方法包括在共享公共隔离层并存储在公共隔离层中的代表数据值的电荷量的多个存储器单元中，分配用于数据存储的第一组存储器单元，以及分配第二组 用于保护存储在第一组中的电荷的存储单元不保持漂移。 数据存储在第一组的存储单元中。 防止第一组的存储单元中保持漂移的电荷的保护量被存储在第二组的存储单元中。

    Enhanced data storage in 3-D memory using string-specific source-side biasing
    49.
    发明授权
    Enhanced data storage in 3-D memory using string-specific source-side biasing 有权
    使用字符串特定的源侧偏移增强了3-D存储器中的数据存储

    公开(公告)号：US09007835B2

    公开(公告)日：2015-04-14

    申请号：US13865351

    申请日：2013-04-18

    Applicant: Apple Inc.

    Inventor： Avraham Poza Meir ,  Eyal Gurgi ,  Naftali Sommer ,  Yoav Kasorla

    IPC: G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34

    CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459

    Abstract: A method includes storing data in a memory, which includes multiple strings of analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines and a third dimension associated with sections, such that each string is associated with a respective bit line and a respective section and includes multiple memory cells that are connected to the respective word lines. For a group of the strings, respective values of a property of the strings in the group are evaluated. Source-side voltages are calculated for the respective strings in the group, depending on the respective values of the property, and respective source-sides of the strings in the group are biased with the corresponding source-side voltages. A memory operation is performed on the strings in the group while the strings are biased with the respective source-side voltages.

    Abstract translation: 一种方法包括将数据存储在存储器中，其包括以具有与位线相关联的第一维度的三维（3-D）配置布置的多个模拟存储器单元串，与字线相关联的第二维度和与第三维度相关联的第三维度 具有部分，使得每个字符串与相应的位线和相应的部分相关联，并且包括连接到各个字线的多个存储器单元。 对于一组字符串，对组中字符串的属性的各个值进行评估。 根据属性的各个值，针对组中的各个串来计算源侧电压，并且组中的串的各个源侧被相应的源极侧电压偏置。 当串被相应的源侧电压偏置时，对组中的串执行存储器操作。

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