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    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE
    46.
    发明申请
    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE 有权
    具有动态栅极导通电容的半导体器件

    公开(公告)号：US20100025748A1

    公开(公告)日：2010-02-04

    申请号：US12184819

    申请日：2008-08-01

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    IPC分类号： H01L29/94 ,  H01L21/8234

    CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

    摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

    摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

    SEMICONDUCTOR COMPONENT WITH TWO-STAGE BODY ZONE
    47.
    发明申请
    SEMICONDUCTOR COMPONENT WITH TWO-STAGE BODY ZONE 审中-公开
    具有两级机体区域的半导体组件

    公开(公告)号：US20090321818A1

    公开(公告)日：2009-12-31

    申请号：US12164611

    申请日：2008-06-30

    申请人： Armin Willmeroth ,  Anton Mauder ,  Winfried Kaindl

    发明人： Armin Willmeroth ,  Anton Mauder ,  Winfried Kaindl

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7395 ,  H01L29/7813

    摘要： A semiconductor component with a two-stage body zone. One embodiment provides semiconductor component including a drift zone, and a compensation zone of a second conduction type. The compensation zone is arranged in the drift zone. A source zone and a body zone is provided. The body zone is arranged between the source zone and the drift zone. A gate electrode is arranged adjacent to the body zone. The body zone has a first body zone section and a second body zone section, which are adjacent to one another along the gate dielectric and of which the first body zone section is doped more highly than the second body zone section.

    摘要翻译： 具有两级体区的半导体元件。 一个实施例提供了包括漂移区和第二导电类型的补偿区的半导体元件。 补偿区设置在漂移区。 提供源区和体区。 身体区域布置在源区和漂移区之间。 栅电极邻近身体区域布置。 身体区域具有沿着栅极电介质彼此相邻的第一身体区段和第二身体区段部分，并且第一身体区域部分被掺杂得比第二身体区段更高。

    SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE IN A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION
    48.
    发明申请
    SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE IN A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION 有权
    具有半导体体中的充电载体补偿结构的半导体器件及其制造方法

    公开(公告)号：US20090267174A1

    公开(公告)日：2009-10-29

    申请号：US12111749

    申请日：2008-04-29

    申请人： Armin Willmeroth ,  Michael Rueb

    发明人： Armin Willmeroth ,  Michael Rueb

    IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/304

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7395

    摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.

    摘要翻译： 在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。 半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。 漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。 朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。 朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER
    49.
    发明申请
    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER 有权

    公开(公告)号：US20090166727A1

    公开(公告)日：2009-07-02

    申请号：US12342721

    申请日：2008-12-23

    申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.