公开(公告)号：US20070007584A1

公开(公告)日：2007-01-11

申请号：US11480901

申请日：2006-07-06

申请人： Seok Hwang ,  Je Kim ,  Kun Ko ,  Bok Min

发明人： Seok Hwang ,  Je Kim ,  Kun Ko ,  Bok Min

IPC分类号： H01L29/792

CPC分类号： H01L33/42 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38

摘要： The present invention relates to a GaN-based semiconductor light emitting diode and a method of manufacturing the same. The GaN-based semiconductor light emitting diode includes: a substrate; a n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type nitride semiconductor layer; an insulating layer formed on an upper center portion of the transparent conductive layer, the insulating layer having a contact hole defining a p-type contact region; a p-electrode formed on the insulating layer and electrically connected to the transparent conductive layer through the contact hole; and an n-electrode formed on the n-type nitride semiconductor layer where no active layer is formed.

摘要翻译： 本发明涉及GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括：基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定部分上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明导电层; 绝缘层，形成在所述透明导电层的上中心部分上，所述绝缘层具有限定p型接触区域的接触孔; p电极，形成在所述绝缘层上，并通过所述接触孔与所述透明导电层电连接; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。

公开(公告)号：US20060215256A1

公开(公告)日：2006-09-28

申请号：US11443376

申请日：2006-05-31

申请人： Jae Lee ,  Jung Lee ,  Je Kim

发明人： Jae Lee ,  Jung Lee ,  Je Kim

IPC分类号： H01S3/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/12

摘要： A gallium nitride semiconductor LED includes a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer.

摘要翻译： 氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成的具有量子阱结构的有源层，以及 形成在有源层上的p型GaN覆层。

公开(公告)号：US20060115197A1

公开(公告)日：2006-06-01

申请号：US11148906

申请日：2005-06-09

申请人： Kwang Choi ,  Jong Lee ,  Yong Chung ,  Young Kang ,  Jong Moon ,  Je Kim

发明人： Kwang Choi ,  Jong Lee ,  Yong Chung ,  Young Kang ,  Jong Moon ,  Je Kim

IPC分类号： G02F1/035

CPC分类号： G02F1/0356

摘要： Provided is an optical module including a microstrip line, a traveling wave type optical device positioned in the end of the microstrip line, and at least one balanced open stub connected to the microstrip line for the impedance matching at a specific frequency such as 40 GHz and 60 GHz. For the fine tuning, laser trimming can be applied to the stub. A transition region is formed between the optical device and the microstrip line. A termination resistor is formed to face the microstrip line with the optical device therebetween. A bandwidth can be controlled at a specific frequency by adjusting a number of the stubs or a value of the termination resistor.

摘要翻译： 提供了一种光学模块，其包括微带线，位于微带线的端部的行波型光学器件和连接到微带线的至少一个平衡的开路短路，用于在特定频率例如40GHz的阻抗匹配，以及 60 GHz。 对于微调，激光修剪可以应用于存根。 在光学器件和微带线之间形成过渡区域。 形成终端电阻器，以便在其间具有光学器件来面对微带线。 可以通过调整短路的数量或终端电阻的值来控制带宽在特定频率。

公开(公告)号：US20060091376A1

公开(公告)日：2006-05-04

申请号：US11098802

申请日：2005-04-05

申请人： Sun Kim ,  Hyun Kim ,  Je Kim ,  In Choi ,  Kyu Lee ,  Jeong Oh

发明人： Sun Kim ,  Hyun Kim ,  Je Kim ,  In Choi ,  Kyu Lee ,  Jeong Oh

IPC分类号： H01L29/06

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

公开(公告)号：US20060079073A1

公开(公告)日：2006-04-13

申请号：US11235278

申请日：2005-09-27

申请人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

发明人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US20060060880A1

公开(公告)日：2006-03-23

申请号：US11053906

申请日：2005-02-10

申请人： Kyu Lee ,  Hyun Kim ,  Je Kim ,  Dong Kim

发明人： Kyu Lee ,  Hyun Kim ,  Je Kim ,  Dong Kim

IPC分类号： H01L29/22

CPC分类号： H01L27/15 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.

摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。

公开(公告)号：US20060003661A1

公开(公告)日：2006-01-05

申请号：US10879526

申请日：2004-06-30

申请人： Je Kim ,  Woo Jang ,  Ju Kim

发明人： Je Kim ,  Woo Jang ,  Ju Kim

IPC分类号： H01J9/00 ,  H01J9/24 ,  H01J17/49

CPC分类号： H01J9/02 ,  H01J9/241

摘要： The present invention relates to a method of making a plasma display panel, and more specifically, a method of forming a dielectric layer on an upper substrate of a plasma display panel. According to first embodiment of the present invention, a method of forming a dielectric layer on an upper substrate of a plasma display panel, comprises steps of: forming a plurality of sustain electrodes on the upper substrate, and bus electrodes on the sustain electrodes; forming an electrode discoloration prevention layer which envelops said sustain electrodes and said bus electrodes, said electrode discoloration prevention layer including a green sheet by first casting; forming a penetration rate enhancement layer on the electrode discoloration prevention layer, said penetration rate enhancement layer including a green sheet by second casting.

摘要翻译： 本发明涉及一种制造等离子体显示面板的方法，更具体地说，涉及一种在等离子体显示面板的上基板上形成电介质层的方法。 根据本发明的第一实施例，在等离子体显示面板的上基板上形成电介质层的方法包括以下步骤：在上基板上形成多个维持电极，在维持电极上形成总线电极; 形成包围所述维持电极和所述总线电极的电极变色防止层，所述电极变色防止层通过第一次浇铸而包括生片; 在电极变色防止层上形成穿透率增强层，所述穿透率增强层通过第二次铸造包括生片。

公开(公告)号：US20050266292A1

公开(公告)日：2005-12-01

申请号：US11091145

申请日：2005-03-28

申请人： Je Kim ,  Pil Park ,  Soonho Ahn ,  Sang-Young Lee ,  SeokKoo Kim ,  Young Lee

发明人： Je Kim ,  Pil Park ,  Soonho Ahn ,  Sang-Young Lee ,  SeokKoo Kim ,  Young Lee

IPC分类号： H01M2/14 ,  H01M2/16 ,  H01M6/46 ,  H01M8/02 ,  H01M10/04 ,  H01M10/05

CPC分类号： H01M2/1653 ,  H01M2/1646 ,  H01M2/166 ,  H01M10/0525 ,  H01M10/0585 ,  H01M10/0587

摘要： Provided is an electrochemical device comprising two types of separators having different energy to break, wherein the outermost electrode layer of the electrode assembly includes an active material non-coated cathode, an active material non-coated anode, and a separator (second separator) disposed between the cathode and anode and having relatively low energy to break compared to that of separators (first separator) in other electrode layers. Therefore, it is possible to remarkably improve safety of the battery by inducing primary short-circuiting in the outermost electrode layer of a battery, thus facilitating heat dissipation of the battery, upon application of external impact.

摘要翻译： 提供了一种电化学装置，其包括具有不同能量破裂的两种类型的隔板，其中电极组件的最外面的电极层包括未涂覆的活性材料的阴极，未涂覆的活性材料的阳极和分离器（第二隔板） 在阴极和阳极之间并且与其它电极层中的隔板（第一隔板）相比具有相对低的能量断裂。 因此，通过在电池的最外面的电极层中引起一次短路，可以显着地提高电池的安全性，因此，在施加外部冲击时有利于电池的散热。

公开(公告)号：US20050179027A1

公开(公告)日：2005-08-18

申请号：US10890215

申请日：2004-07-14

申请人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

发明人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0

摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

公开(公告)号：US20050133812A1

公开(公告)日：2005-06-23

申请号：US10806432

申请日：2004-03-23

申请人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

发明人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L29/225

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。