公开(公告)号：US07018506B2

公开(公告)日：2006-03-28

申请号：US10458239

申请日：2003-06-11

Applicant: Toshiaki Hongoh ,  Naoki Matsumoto ,  Chishio Koshimizu

Inventor： Toshiaki Hongoh ,  Naoki Matsumoto ,  Chishio Koshimizu

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/321 ,  C23C16/507 ,  H01J37/32091

Abstract: A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.

Abstract translation: 等离子体处理装置包括将高频感应天线与真空室分离的板。 板包括具有开口的非磁性金属板和密封开口的电介质材料构件。 非磁性金属板的面积大于介电材料构件的面积。

公开(公告)号：US06576860B2

公开(公告)日：2003-06-10

申请号：US10160243

申请日：2002-06-04

Applicant: Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

Inventor： Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

IPC: B23K1000

CPC classification number: H01J37/32082 ,  H01J37/32165

Abstract: A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

公开(公告)号：US5980687A

公开(公告)日：1999-11-09

申请号：US66736

申请日：1998-04-27

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H01L21/302 ,  C23C14/22 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065 ,  C23F1/02 ,  C23C14/00 ,  C23C16/00

CPC classification number: H01J37/3266 ,  C23C14/22 ,  C23C16/45589 ,  H01J37/3244 ,  H01J37/32623

Abstract: A plasma process apparatus includes first and second electrodes or susceptors located in a process container with a space interposed therebetween, first and second electrodes being disposed to support a semiconductor wafer such that the wafers are opposed to each other through a plasma a generating region. A high frequency voltages are applied to the first and second electrodes to supply a high frequency power to the plasma generating region, and a rotating magnetic field is generated in the plasma generating region, so that the high frequency power and the rotating magnetic field generate plasma of a process gas in the plasma generating region. Compensating-process-gas supply mechanism is provided for supplying a compensating process gas to part of the plasma generating region in synchronism with the rotation of the rotating magnetic field to compensate nonuniformity in the density of plasma generated in the plasma generating region.

Abstract translation: 等离子体处理装置包括位于处理容器中的第一和第二电极或基座，其中插入有空间，第一和第二电极设置成支撑半导体晶片，使得晶片通过等离子体产生区彼此相对。 向第一和第二电极施加高频电压以向等离子体产生区域提供高频电力，并且在等离子体产生区域中产生旋转磁场，使得高频功率和旋转磁场产生等离子体 的等离子体产生区域中的工艺气体。 提供了补偿处理气体供给机构，用于与等离子体产生区域中产生的等离子体的密度的不均匀性同步地与旋转磁场的旋转同步地向补偿处理气体供给等离子体产生区域的一部分。

公开(公告)号：US5290383A

公开(公告)日：1994-03-01

申请号：US48711

申请日：1993-04-19

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC classification number: H01J37/32935 ,  H01J37/32963 ,  H01L21/31116 ,  Y10S156/916

Abstract: In one aspect of the invention, CHF.sub.3 gas and CF.sub.4 gas (i.e., reactant gases), and argon gas (i.e., plasma-stabilizing gas) are introduced into a vacuum chamber. RF power is then applied between the electrodes within the chamber, thereby generating plasma. The plasma is applied to a substrate placed in the chamber, thus etching the SiO.sub.2 film formed on the substrate. A spectrometer extracts a light beam of a desired wavelength, emitted from the CF.sub.2 radical which contributes to the etching. An end-point detecting section monitors the luminous intensity of the CF.sub.2 radical reacting with SiO.sub.2 during the etching. Once the SiO.sub.2 film has been etched away, the luminous intensity of the CF.sub.2 radical increases. Upon detecting this increase, the section determines that etching has just ended. The selected wavelength ranges from 310 nm to 236 nm, preferably being 219.0 nm, 230.0 nm, 211.2 nm, 232.5 nm, or any one ranging from 224 nm to 229 nm. In another aspect of the invention, the device attached to the observation window of the chamber removes products stuck to the window during the etching. The window thus cleaned, more light than otherwise passes through the window and reaches the spectrometer. This enables the section to detect even a slight change in the luminous intensity of the CF.sub.2 radical, thereby detecting the end point of etching with accuracy.

Abstract translation: 在本发明的一个方面，将CHF 3气体和CF 4气体（即反应气体）和氩气（即等离子体稳定气体）引入真空室。 然后将RF功率施加在室内的电极之间，从而产生等离子体。 将等离子体施加到放置在室中的衬底上，从而蚀刻形成在衬底上的SiO 2膜。 光谱仪提取从有助于蚀刻的CF 2自由基发射的期望波长的光束。 终点检测部分在蚀刻期间监测与SiO 2反应的CF 2自由基的发光强度。 一旦SiO 2膜被蚀刻掉，CF2自由基的发光强度就会增加。 在检测到这种增加时，该部分确定蚀刻刚刚结束。 所选择的波长范围为310nm至236nm，优选为219.0nm，230.0nm，211.2nm，232.5nm或224nm至229nm的任何一个。 在本发明的另一方面，连接到室的观察窗的装置在蚀刻期间去除粘附到窗口的产物。 如此清洁的窗户，比其他方式更光线通过窗户并到达光谱仪。 这使得该部分甚至可以检测到CF2基团的发光强度的轻微变化，从而精确地检测蚀刻的终点。

公开(公告)号：US09349618B2

公开(公告)日：2016-05-24

申请号：US13344267

申请日：2012-01-05

Applicant: Jun Yamawaku ,  Chishio Koshimizu

Inventor： Jun Yamawaku ,  Chishio Koshimizu

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/67069 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32642 ,  H01L21/68735

Abstract: A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

Abstract translation: 一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。 在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件， 聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。

公开(公告)号：US08825434B2

公开(公告)日：2014-09-02

申请号：US13248538

申请日：2011-09-29

Applicant: Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

Inventor： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

IPC: G01K11/00 ,  G01K11/12 ,  G01B11/06 ,  G01B9/02

CPC classification number: G01K11/125 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/0209 ,  G01B11/0675

Abstract: A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.

Abstract translation: 温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。

公开(公告)号：US08790490B2

公开(公告)日：2014-07-29

申请号：US13396181

申请日：2012-02-14

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20120145679A1

公开(公告)日：2012-06-14

申请号：US13403588

申请日：2012-02-23

Applicant: Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

Inventor： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC: B23K9/00

CPC classification number: H01J37/32165 ,  H01J37/32082

Abstract: In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

Abstract translation: 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。

公开(公告)号：US08164033B2

公开(公告)日：2012-04-24

申请号：US13097251

申请日：2011-04-29

Applicant: Chishio Koshimizu ,  Tomohiro Suzuki

Inventor： Chishio Koshimizu ,  Tomohiro Suzuki

IPC: H05B1/02

CPC classification number: F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

Abstract: A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

Abstract translation: 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US08144332B2

公开(公告)日：2012-03-27

申请号：US12399431

申请日：2009-03-06

Applicant: Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01B9/02 ,  G01B11/02

CPC classification number: G01K11/00 ,  G01K11/125

Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.

Abstract translation: 温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。 温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。