公开(公告)号：US06849559B2

公开(公告)日：2005-02-01

申请号：US10259381

申请日：2002-09-30

申请人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagiwara ,  Eiichi Nishimura ,  Kouichiro Inazawa

发明人： Vaidyanathan Balasubramaniam ,  Yasunori Hatamura ,  Masaaki Hagiwara ,  Eiichi Nishimura ,  Kouichiro Inazawa

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/31 ,  H01L21/461

CPC分类号： H01L21/76814 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/31138

摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

摘要翻译： 提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。 灰化方法使用包含含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻以除去大量的光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。

公开(公告)号：US5314603A

公开(公告)日：1994-05-24

申请号：US918045

申请日：1992-07-24

申请人： Kazuhiko Sugiyama ,  Masafumi Shimizu ,  Yukio Naito ,  Eiichi Nishimura ,  Kouichi Oshima

发明人： Kazuhiko Sugiyama ,  Masafumi Shimizu ,  Yukio Naito ,  Eiichi Nishimura ,  Kouichi Oshima

IPC分类号： H01J37/32 ,  C23C14/34 ,  C23F1/02

CPC分类号： H01J37/32082 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processing apparatus has a process chamber and a pair of electrodes provided in the process chamber to oppose each other. An RF power supply outputs an RF power to be supplied to at least one of the pair of electrodes in the process chamber. A power detector detects an actual RF power to be applied to one of the electrodes in the process chamber. A controller controls the RF power output from the RF power supply to a predetermined value in accordance with the actual RF power detected by the power detector.

摘要翻译： 等离子体处理装置具有处理室和设置在处理室中的彼此相对的一对电极。 RF电源输出要提供给处理室中的一对电极中的至少一个的RF功率。 功率检测器检测要施加到处理室中的一个电极的实际RF功率。 控制器根据由功率检测器检测到的实际RF功率，将从RF电源输出的RF功率控制到预定值。

公开(公告)号：US5010510A

公开(公告)日：1991-04-23

申请号：US579343

申请日：1990-09-07

申请人： Eiichi Nishimura ,  Takao Nakamura ,  Hisaki Ishida

发明人： Eiichi Nishimura ,  Takao Nakamura ,  Hisaki Ishida

IPC分类号： G06F7/53 ,  G06F7/508 ,  G06F7/52 ,  G06F7/76

CPC分类号： G06F7/5312 ,  G06F7/762

摘要： A parallel multiplier consists of a systolic array of AND gates and full adders organized in stages so that each stage generates a partial product, adds it to the preceding partial products, and furnishes the sum to the next stage. A control circuit is provided that disables the outputs of each stage of the array until the operation in the particular stage is completed. The disabling of outputs reduces power consumption.

摘要翻译： 并行乘法器由AND门的收缩阵列和分阶段组合的全加法器组成，使得每个阶段生成部分乘积，将其添加到先前的部分乘积，并将总和提供给下一阶段。 提供了一种控制电路，其禁用阵列的每个级的输出，直到特定级的操作完成。 输出禁用可以降低功耗。

公开(公告)号：US4451428A

公开(公告)日：1984-05-29

申请号：US222060

申请日：1981-01-02

申请人： Eiichi Nishimura ,  Shunsuke Uchida ,  Masao Kitamura ,  Koichi Saito ,  Eishi Ibe ,  Tatsuo Hayashi

发明人： Eiichi Nishimura ,  Shunsuke Uchida ,  Masao Kitamura ,  Koichi Saito ,  Eishi Ibe ,  Tatsuo Hayashi

IPC分类号： G21C7/10 ,  G21C7/113 ,  G21C7/24

CPC分类号： G21C7/113 ,  G21Y2002/206 ,  G21Y2004/10 ,  G21Y2004/30 ,  Y02E30/31 ,  Y02E30/39

摘要： A control rod for a boiling-water reactor having blades arranged in the form of a cross in transverse cross section includes a plurality of poison tubes disposed therein. Boron carbide powder which is a neutron absorbing material causing an (n, .alpha.) reaction to take place is charged in the poison tubes. The control rod has plates of Hf-Zr alloy arranged in the blades in a position nearer to a forward end of the control rod at which the control rod is inserted in a reactor core than the poison tubes. The plates of Hf-Zr alloy are formed of an alloy of Hf having a large neutron absorption cross section and Zr having a small neutron absorption cross section. The concentration of Hf in the plates of Hf-Zr alloy is successively reduced in going from an end thereof adjacent the poison tubes toward and end thereof at the inserting end of the control rod. The plates of Hf-Zr alloy and the poison tubes have the same neutron absorbing capacity at the boundary therebetween at which they are in contact with each other.

摘要翻译： 一种沸水反应器的控制棒，其具有以十字横截面形式布置的叶片，其中包括多个设置在其中的毒药管。 将引起（n，α）反应的中子吸收材料的碳化硼粉末装入毒药管中。 控制杆具有在叶片中布置在更靠近控制棒的前端的位置的Hf-Zr合金板，在该位置控制杆插入反应堆芯中而不是毒药管。 Hf-Zr合金的板由具有大的中子吸收截面的Hf的合金和具有小的中子吸收截面的Zr形成。 Hf-Zr合金板中Hf的浓度从控制棒插入端的毒药管附近的端部朝向其末端逐渐减小。 Hf-Zr合金板和毒药管在它们彼此接触的边界处具有相同的中子吸收能力。

公开(公告)号：US08715520B2

公开(公告)日：2014-05-06

申请号：US13425551

申请日：2012-03-21

申请人： Takashi Sone ,  Eiichi Nishimura

发明人： Takashi Sone ,  Eiichi Nishimura

IPC分类号： C23F1/40

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/32091 ,  H01L43/12

摘要： There is provided a substrate processing method capable of etching a layer containing, at least, platinum without using a halogen gas. When etching the platinum-manganese layer on a wafer W by using a tantalum (Ta) layer 38 having a certain pattern shape, a processing gas containing, at least, a carbon monoxide gas, a hydrogen gas, and a rare gas is used, and a ratio of a gas flow rate of the hydrogen gas to a total gas flow rate of the carbon monoxide gas and the hydrogen gas is in a range of from about 50% to about 75%.

摘要翻译： 提供了能够在不使用卤素气体的情况下蚀刻至少含有铂的层的基板处理方法。 当通过使用具有一定图案形状的钽（Ta）层38来蚀刻晶圆W上的铂 - 锰层时，使用至少含有一氧化碳气体，氢气和稀有气体的处理气体， 并且氢气的气体流量与一氧化碳气体和氢气的总气体流量的比率在约50％至约75％的范围内。

公开(公告)号：US08608974B2

公开(公告)日：2013-12-17

申请号：US13332531

申请日：2011-12-21

申请人： Eiichi Nishimura

发明人： Eiichi Nishimura

IPC分类号： C23F1/00

CPC分类号： H01L21/02063 ,  C23F4/00 ,  H01J37/32091 ,  H01L21/02068 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/76805

摘要： There is provided a substrate processing method capable of increasing an etching rate of a copper member without using a halogen gas. A Cu layer 40 having a smoothened surface 50 is obtained, and then, a processing gas produced by adding a methane gas to a hydrogen gas is introduced into an inner space of a processing chamber 15. Plasma is generated from this processing gas. In the inner space of the processing chamber 15, there exist oxygen radicals 52 generated when an oxide layer 42 is etched, and carbon radicals 53 generated from methane. The oxygen radicals 52 and the carbon radicals 53 are compounded to generate an organic acid, and the organic acid makes a reaction with copper atoms of the Cu layer 40. As a result, a complex of the organic acid having the copper atoms is generated, and the generated organic acid complex is vaporized.

摘要翻译： 提供了能够在不使用卤素气体的情况下提高铜构件的蚀刻速度的基板处理方法。 获得具有平滑表面50的Cu层40，然后将通过将甲烷气体加入到氢气中而产生的处理气体被引入到处理室15的内部空间中。由该处理气体产生等离子体。 在处理室15的内部空间中，当蚀刻氧化物层42时产生氧自由基52，以及由甲烷产生的碳自由基53。 将氧自由基52和碳基53混合以产生有机酸，并且有机酸与Cu层40的铜原子反应。结果，产生具有铜原子的有机酸的络合物， 产生的有机酸络合物蒸发。

公开(公告)号：US08357615B2

公开(公告)日：2013-01-22

申请号：US12216154

申请日：2008-06-30

申请人： Yuki Chiba ,  Eiichi Nishimura ,  Ryuichi Asako

发明人： Yuki Chiba ,  Eiichi Nishimura ,  Ryuichi Asako

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01L21/02063 ,  H01J37/32522 ,  H01J2237/2001 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826

摘要： The present invention is an apparatus for manufacturing a semiconductor device comprising: a process vessel including a stage on which a substrate is placed, the substrate having a low dielectric constant film with a resist pattern being formed in an upper layer of the low dielectric constant film; an etching-gas supply unit that supplies an etching gas into the process vessel so as to etch the low dielectric constant film; an ashing-gas unit means that supplies an ashing gas into the process vessel so as to ash the resist pattern formed in the upper layer of the low dielectric constant film after the low dielectric constant film has been subjected to an etching process; a plasma generating means that generates a plasma by supplying an energy to the etching gas and the ashing gas in the process vessel; a unit that supplies a dipivaloylmethane gas into the process vessel, after the low dielectric constant film has been subjected to an ashing process, in order to recover a damage layer of the low dielectric constant film which has been damaged by the plasma; and a heating unit that enables the dipivaloylmethane gas to come into contact with a surface of the substrate under a heated condition.

公开(公告)号：US20120009786A1

公开(公告)日：2012-01-12

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/3065

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US08043472B2

公开(公告)日：2011-10-25

申请号：US12016607

申请日：2008-01-18

申请人： Masaaki Miyagawa ,  Eiichi Nishimura

发明人： Masaaki Miyagawa ,  Eiichi Nishimura

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32642 ,  H01J37/32623

摘要： A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing.

摘要翻译： 一种能够可靠地提高聚焦环和安装台之间的热传递效率的基板处理装置。 其内部抽真空的容纳室容纳衬底。 基板安装在设置在壳体室中的安装台上。 环形聚焦环安装在安装台上，以便围绕安装的基板的周边部分。 在通过打印处理接触安装台的聚焦环的表面上形成传热膜。

公开(公告)号：US20100240217A1

公开(公告)日：2010-09-23

申请号：US12721962

申请日：2010-03-11

申请人： Masato KUSHIBIKI ,  Eiichi Nishimura

发明人： Masato KUSHIBIKI ,  Eiichi Nishimura

IPC分类号： H01L21/311

CPC分类号： H01L21/0273 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

摘要： A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.

摘要翻译： 处理具有加工对象层和作为掩模层的有机膜的基板的处理方法包括使有机膜成矿化的矿化工序。 矿化方法包括使含硅气体吸附在有机膜的表面上的吸附方法; 以及用于氧化被吸收的待转化为氧化硅膜的含硅气体的氧化工艺。 使用一价氨基硅烷作为含硅气体。