Ferroelectric thin film device and its process
    41.
    发明授权
    Ferroelectric thin film device and its process 失效
    铁电薄膜器件及其工艺

    公开(公告)号:US5866238A

    公开(公告)日:1999-02-02

    申请号:US811301

    申请日:1997-03-04

    IPC分类号: H01L37/02 H01L41/24 B32B3/00

    摘要: A first ferroelectric thin film device is provided with a first substrate consisting of polycrystal, amorphous material or metal material and a first ferroelectric thin film formed on the first substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 70.times.10.sup.-7 /.degree.C. or more. At least 75% of crystal axes of the first ferroelectric thin film are oriented in -direction. A second ferroelectric thin film device is provided with a second substrate consisting of amorphous material and a second ferroelectric thin film formed on the second substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 50.times.10.sup.-7 /.degree.C. or less. At least 75% of crystal axes of the second ferroelectric thin film are oriented in direction.

    摘要翻译: 第一铁电薄膜器件设置有由多晶,非晶材料或金属材料组成的第一衬底和形成在第一衬底上的第一铁电薄膜。 从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为70×10 -7 /℃以上。 第一铁电薄膜的至少75%的晶轴取向为<001>方向。 第二铁电薄膜器件设置有由非晶材料构成的第二衬底和形成在第二衬底上的第二铁电薄膜。 从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为50×10 -7 /℃以下。 第二铁电薄膜的至少75%的晶轴取向为<100>方向。

    Method and apparatus of forming thin films
    42.
    发明授权
    Method and apparatus of forming thin films 失效
    形成薄膜的方法和装置

    公开(公告)号:US5755888A

    公开(公告)日:1998-05-26

    申请号:US518267

    申请日:1995-08-23

    摘要: An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means. In this way, thin films can be formed in a short thin-film formation time with a small apparatus, since vapor of a starting material which is led in at the time of chemical vapor deposition does not enter the physical vapor deposition device.

    摘要翻译: 提供一种形成薄膜并需要短的薄膜形成时间的装置,其包括至少一个物理气相沉积装置和至少一个化学气相沉积装置,其中所述物理气相沉积装置和所述化学气相 沉积装置设置有分别用于与公共排气装置和排气开关装置连接的排气管。 还提供了使用该装置形成薄膜的方法。 根据其中排气切换装置经由排气管连接到物理气相沉积装置,化学气相沉积装置和排气装置的结构,该装置可以实现为具有至少两个室的小尺寸 和一个排气装置。 这样,由于在化学气相沉积时引入的原料的蒸气不会进入物理气相沉积装置,因此可以用小的装置在短的薄膜形成时间内形成薄膜。

    ACTUATOR AND METHOD FOR DRIVING ACTUATOR
    47.
    发明申请
    ACTUATOR AND METHOD FOR DRIVING ACTUATOR 有权
    执行器和驱动执行器的方法

    公开(公告)号:US20120043857A1

    公开(公告)日:2012-02-23

    申请号:US13282089

    申请日:2011-10-26

    IPC分类号: H01L41/18

    摘要: The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed.The present invention provides a method for driving an actuator, comprising the following steps (a) and (b): a step (a) of preparing the actuator, wherein the actuator comprises a first electrode, a piezoelectric layer composed of (Bi,Na,Ba)TiO3, and a second electrode, the piezoelectric layer is interposed between the first electrode and the second electrode, +X direction, +Y direction, and +Z direction denote [100] direction, [01-1] direction, and [011] direction, respectively, and the piezoelectric layer is preferentially oriented along the +Z direction; and a step (b) of applying a potential difference between the first electrode and the second electrode to drive the actuator.

    摘要翻译: 本发明的目的是提供一种驱动致动器的方法,其中不必要的变形被抑制。 本发明提供一种用于驱动致动器的方法,包括以下步骤(a)和(b):制备致动器的步骤(a),其中致动器包括第一电极,由(Bi,Na ,Ba)TiO 3和第二电极,压电层插入在第一电极和第二电极之间,+ X方向,+ Y方向和+ Z方向表示[100]方向,[01-1]方向,以及 方向,并且压电层优先沿着+ Z方向取向; 以及在第一电极和第二电极之间施加电位差以驱动致动器的步骤(b)。

    Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
    49.
    发明授权
    Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
    压电元件,喷墨头,角速度传感器,其制造方法和喷墨记录装置

    公开(公告)号:US07478558B2

    公开(公告)日:2009-01-20

    申请号:US11362583

    申请日:2006-02-24

    IPC分类号: G01C19/00 B41J2/045 H01L41/04

    摘要: In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.

    摘要翻译: 在压电元件中,在基板11上设置粘合剂层12,在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14,优选的是取向控制层15 在第一电极层14上设置有(100)或(001)面。在取向控制层15的靠近第一电极层14的表面附近,(100) - 或(001) - 位于第一电极层14的靠近取向控制层15的一个表面上的钛或氧化钛上,并且沿与厚度方向垂直的方向的区域的横截面积沿着方向 远离第一电极层14朝向相对侧。 此外,在取向控制层15上设置优选沿(001)面取向的压电体层16。