公开(公告)号：US20060134330A1

公开(公告)日：2006-06-22

申请号：US11112932

申请日：2005-04-22

申请人： Tetsuya Ishikawa ,  Rick Roberts ,  Helen Armer ,  Leon Volfovski ,  Jay Pinson ,  Michael Rice ,  David Quach ,  Mohsen Salek ,  Robert Lowrance ,  William Weaver ,  Charles Carlson ,  Chongyang Wang ,  Jeffrey Hudgens ,  Harald Herchen ,  Brian Lue ,  John Backer

发明人： Tetsuya Ishikawa ,  Rick Roberts ,  Helen Armer ,  Leon Volfovski ,  Jay Pinson ,  Michael Rice ,  David Quach ,  Mohsen Salek ,  Robert Lowrance ,  William Weaver ,  Charles Carlson ,  Chongyang Wang ,  Jeffrey Hudgens ,  Harald Herchen ,  Brian Lue ,  John Backer

IPC分类号： C23C16/00

CPC分类号： H01L21/67225 ,  G03B27/32 ,  G03D13/006 ,  G03F7/40 ,  G05B19/41825 ,  G05B2219/40476 ,  G05B2219/45031 ,  G05B2219/49137 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/6831 ,  H01L21/6838 ,  H01L21/68707 ,  H01L22/26 ,  Y02P90/087 ,  Y10S414/135 ,  Y10S414/136 ,  Y10T29/53187 ,  Y10T29/5323

摘要： Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool. In track lithography type cluster tools, since the chamber processing times tend to be rather short, and the number of processing steps required to complete a typical track system process is large, a significant portion of the time it takes to process a substrate is taken up by the processes of transferring the substrates in a cluster tool between the various processing chambers. In one embodiment of the cluster tool, the cost of ownership is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more to improve system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. In one aspect of the invention, the substrate processing sequence and cluster tool are designed so that the substrate transferring steps performed during the processing sequence are only made to chambers that will perform the next processing step in the processing sequence. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

公开(公告)号：US06692903B2

公开(公告)日：2004-02-17

申请号：US09737373

申请日：2000-12-13

申请人： Haojiang Chen ,  James S. Papanu ,  Mark Kawaguchi ,  Harald Herchen ,  Jeng H. Hwang ,  Guangxiang Jin ,  David Palagashvili

发明人： Haojiang Chen ,  James S. Papanu ,  Mark Kawaguchi ,  Harald Herchen ,  Jeng H. Hwang ,  Guangxiang Jin ,  David Palagashvili

IPC分类号： G03F736

CPC分类号： H01L21/02071 ,  G03F7/427 ,  H01L21/32136

摘要： A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.

摘要翻译： 处理衬底30的方法包括将衬底30暴露于通电工艺气体以蚀刻衬底30上的特征67，并将衬底30暴露于通电的清洁气体以从衬底30去除蚀刻剂残留物70和/或残余抗蚀剂60 为了增强清洁过程，可以在清洁过程之前，之中或之后对衬底30进行处理，通过将衬底30暴露于包含卤素物质的通电处理气体中。

公开(公告)号：US06529362B2

公开(公告)日：2003-03-04

申请号：US08920423

申请日：1997-08-29

申请人： Harald Herchen

发明人： Harald Herchen

IPC分类号： H02N1300

CPC分类号： H02N13/00 ,  H01L21/6831 ,  H01L21/6833

摘要： An electrostatic chuck 20 for holding a substrate 12 in a process chamber, comprises a unitary monolithic structure 25 of monocrystalline ceramic. The monocrystalline monolith has an electrode 45 embedded therein for electrostatically holding the substrate 12 upon application of a voltage thereto. An electrical connector 50 extends through the unitary monolithic structure 25 for supplying a voltage to the electrode 45. In one version, the monolithic structure 25 is made from a single piece of monocrystalline ceramic formed by a melt forming process. In another version, the monolithic structure 25 comprises a plurality of monocrystalline ceramic plates 270 bonded to one another to form the monolithic structure 25. Preferably, the monolithic structure 25 comprises monocrystalline sapphire and the electrode 45 comprises a refractory metal.

摘要翻译： 用于将基板12保持在处理室中的静电卡盘20包括单晶陶瓷的单一整体结构25。 单晶整体块具有嵌入其中的电极45，用于在施加电压时静电保持衬底12。 电连接器50延伸穿过整体式整体结构25，以向电极45提供电压。在一种形式中，整体结构25由通过熔融成形工艺形成的单片单晶陶瓷制成。 在另一种形式中，整体结构25包括彼此结合以形成整体结构25的多个单晶陶瓷板270.优选地，整体式结构25包括单晶蓝宝石，电极45包括难熔金属。

公开(公告)号：US06248206B1

公开(公告)日：2001-06-19

申请号：US08724660

申请日：1996-10-01

申请人： Harald Herchen ,  Michael D Welch ,  William Brown ,  Walter Richardson Merry

发明人： Harald Herchen ,  Michael D Welch ,  William Brown ,  Walter Richardson Merry

IPC分类号： C23F102

CPC分类号： H01J37/32082 ,  H01J37/3299 ,  H01L21/31116

摘要： A process is provided for controlling the slope of the sidewalls of an opening produced in a semiconductor wafer during an etch process. Microwave or radio frequency energy is remotely applied to pre-excite a process gas. Radio frequency energy is also supplied to the process gas within the process chamber. The sidewall slope is varied by varying the ratio of the amount of remote microwave or radio frequency energy supplied and that of the radio frequency energy supplied within the process chamber. The sidewall slope is also shaped by controlling the process gas flow rate and composition, and the pressure within the process chamber. A more vertical, anisotropic etch profile is obtained with increased radio frequency energy and lower process chamber pressure. A more horizontal, isotropic profile is obtained with decreased radio frequency energy and higher process chamber pressure. A narrower etched feature having smaller interlayer and active element contact regions than the corresponding feature size on the overlying photoresist layer may thereby be provided.

摘要翻译： 提供了一种用于控制在蚀刻工艺期间在半导体晶片中产生的开口的侧壁的斜率的工艺。 微波或射频能量被远程应用于预处理气体。 射频能量也被提供给处理室内的处理气体。 通过改变提供的远程微波或射频能量与处理室内提供的射频能量的比率来改变侧壁倾斜度。 侧壁倾斜也通过控制工艺气体流速和组成以及处理室内的压力来成形。 通过增加射频能量和较低的处理室压力获得更垂直的各向异性蚀刻轮廓。 通过降低射频能量和更高的处理室压力获得更水平，各向同性的曲线。 因此可以提供具有比覆盖的光致抗蚀剂层上的相应特征尺寸更小的中间层和有源元件接触区域的较窄蚀刻特征。

公开(公告)号：US6015761A

公开(公告)日：2000-01-18

申请号：US672469

申请日：1996-06-26

申请人： Walter Richardson Merry ,  William Brown ,  Harald Herchen ,  Michael D. Welch

发明人： Walter Richardson Merry ,  William Brown ,  Harald Herchen ,  Michael D. Welch

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/00

CPC分类号： H01L21/76807 ,  H01L21/31116 ,  H01L21/76804

摘要： A microwave-activated plasma process for etching dielectric layers (20) on a substrate (25) with excellent control of the shape and cross-sectional profile of the etched features (40), high etch rates, and good etching uniformity, is described. A process gas comprising (i) fluorocarbon gas (preferably CF.sub.4), (ii) inorganic fluorinated gas (preferably NF.sub.3), and (iii) oxygen, is used. The process gas is introduced into a plasma zone (55) remote from a process zone (60) and microwaves are coupled into the plasma zone (55) to form a microwave-activated plasma. The microwave-activated plasma is introduced into the process zone (60) to etch the dielectric layer (20) on the substrate (25) with excellent control of the shape of the etched features.

摘要翻译： 描述了对蚀刻特征（40）的形状和横截面轮廓具有优异控制，高蚀刻速率和良好的蚀刻均匀性的对基板（25）上的介电层（20）进行蚀刻的微波激活等离子体处理。 使用包含（i）碳氟化合物气体（优选CF 4），（ii）无机氟化气体（优选NF 3）和（iii）氧气）的工艺气体。 将处理气体引入到远离处理区（60）的等离子体区（55）中，并且将微波耦合到等离子体区（55）中以形成微波激活的等离子体。 微波激活的等离子体被引入处理区（60）中，以蚀刻特征的形状的优良控制蚀刻衬底（25）上的电介质层（20）。

公开(公告)号：US5948168A

公开(公告)日：1999-09-07

申请号：US947820

申请日：1997-10-09

申请人： Hongching Shan ,  Harald Herchen ,  Michael Welch

发明人： Hongching Shan ,  Harald Herchen ,  Michael Welch

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32229 ,  H01J37/32357 ,  H01J37/3244 ,  Y10S438/935

摘要： A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.

摘要翻译： 等离子体反应器具有多个介电气体注入管，其从气体注入源延伸并通过微波引导件并进入反应器室的顶部。 半导体晶片位于连接到偏置RF电源的晶片基座上的室底部附近，偏置RF电源独立于耦合到微波引导件的微波源控制。 来自波导的微波在每个管中点燃并保持等离子体。 通过管的气体流将所有管中的等离子体携带到室中并与晶片表面接触。

公开(公告)号：US5780359A

公开(公告)日：1998-07-14

申请号：US570058

申请日：1995-12-11

申请人： William Brown ,  Harald Herchen ,  Walter Merry ,  Michael Welch

发明人： William Brown ,  Harald Herchen ,  Walter Merry ,  Michael Welch

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/02071 ,  H01L21/31138

摘要： A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.

公开(公告)号：US5747917A

公开(公告)日：1998-05-05

申请号：US601477

申请日：1996-02-14

申请人： Harald Herchen

发明人： Harald Herchen

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01J17/26 ,  H01J7/24 ,  H01J61/28 ,  H05B31/26

CPC分类号： H01J37/32357

摘要： An improved plasma applicator uses a double-walled sapphire sleeve assembly to provide a high efficiency cooling mechanism that is adapted for use with high power applications and aggressive plasma chemistries in the generation of a plasma. Plasma contained within a highly thermally emissive first sapphire member heats the member, causing it to radiate thermal energy. The radiated thermal energy crosses a narrow gap and passes through an infrared-transparent second sapphire member. An infrared-absorbing coolant fluid that exhibits negligible microwave absorption is flowed in a second gap between the second sapphire member and a third member and absorbs most of the infrared radiation over the fluid's bulk. The use of a bulk fluid optimizes the cooling of the plasma to reduce ion and electron density and maximize reactive species output from the applicator to a vacuum process chamber.

摘要翻译： 改进的等离子体施加器使用双壁蓝宝石套筒组件来提供高效率冷却机构，其适用于高功率应用和侵蚀性等离子体化学品的产生等离子体。 包含在高度发热的第一蓝宝石构件内的等离子体加热构件，使其辐射热能。 辐射热能穿过窄间隙并穿过红外线透明的第二蓝宝石部件。 显示出微不足道的微波吸收的红外线吸收式冷却剂流体在第二蓝宝石构件和第三构件之间的第二间隙中流动，并且吸收流体本体上的大部分红外辐射。 大量流体的使用优化了等离子体的冷却，以减少离子和电子密度，并使从施涂器到真空处理室的反应物种输出最大化。

公开(公告)号：US5728260A

公开(公告)日：1998-03-17

申请号：US654958

申请日：1996-05-29

申请人： William Brown ,  Harald Herchen ,  Ihi Nzeadibe ,  Walter Merry

发明人： William Brown ,  Harald Herchen ,  Ihi Nzeadibe ,  Walter Merry

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/3244

摘要： An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.

摘要翻译： 用于化学下游蚀刻工具的改进的低体积气体分配组件包括定位在处理室内并具有紧邻晶片卡盘的垂直护罩的聚焦轴环。 多孔气体输送导管支撑在聚焦轴环的中心管的倾斜侧面上形成的通道上。 气体输送管道中的孔被图案化并确定尺寸以提供工件气体在工件的上表面上的基本上均匀的分布。 中心管用盖板密封，处理室被室盖覆盖。

公开(公告)号：US08785821B2

公开(公告)日：2014-07-22

申请号：US12823802

申请日：2010-06-25

申请人： Harald Herchen

发明人： Harald Herchen

IPC分类号： H05B3/68 ,  C23C16/00

CPC分类号： H05B3/283 ,  H01L21/67103 ,  H01L21/67109

摘要： A substrate processing apparatus for heating a substrate is provided. The substrate processing apparatus can include a top and bottom planar member. A heater layer can be disposed between the top and the bottom planar member and held in place by evacuating a region between the two planar members. The heater layer can be made of alternating insulating and conducting layers with heater elements formed on the conducting layers in predetermined pattern.

摘要翻译： 提供了一种用于加热基板的基板处理装置。 基板处理装置可以包括顶部和底部平面部件。 加热器层可以设置在顶部和底部平面构件之间，并且通过抽吸两个平面构件之间的区域而保持就位。 加热器层可以由具有以预定图案形成在导电层上的加热器元件的交替绝缘和导电层制成。