公开(公告)号：US07842977B2

公开(公告)日：2010-11-30

申请号：US11675460

申请日：2007-02-15

申请人： Stefan Jakschik ,  Thomas Hecht

发明人： Stefan Jakschik ,  Thomas Hecht

IPC分类号： H01L29/78

CPC分类号： H01L21/28026 ,  H01L21/28061 ,  H01L21/823842 ,  H01L29/42372 ,  H01L29/4925 ,  H01L29/517 ,  H01L29/7833 ,  H01L29/7845

摘要： A gate electrode structure comprises at least one bi-layer, wherein each bi-layer comprises a plating film and a stress amplifier film. The plating film includes a poly-crystalline material. The stress amplifier film determines the crystallization result of the poly-crystalline material, wherein a mechanical stress induced through the plating layer is amplified. Tensile or compressive strain may be induced in a crystalline substrate. Electron or hole mobility may be increased and on-resistance characteristics of a MOS field effect transistor may be improved.

摘要翻译： 栅电极结构包括至少一个双层，其中每个双层包括镀膜和应力放大膜。 镀膜包括多晶材料。 应力放大器膜确定多晶材料的结晶结果，其中通过镀层诱导的机械应力被放大。 可能在结晶底物中诱导拉伸或压缩应变。 可以增加电子或空穴迁移率，并可提高MOS场效应晶体管的导通电阻特性。

公开(公告)号：US20070228067A1

公开(公告)日：2007-10-04

申请号：US11754023

申请日：2007-05-25

申请人： Thomas Hecht

发明人： Thomas Hecht

IPC分类号： B65H1/08

CPC分类号： G07F11/16

摘要： The present invention relates to a more robust article dispensing apparatus that is relatively simple in construction and usage for dispensing articles in a clean and protective environment. More specifically, the apparatus accepts, separates, and dispenses articles from a nested stack of articles such as beverage cup lids one at a time. In one embodiment, a dispensing apparatus for dispensing an article from a stack of articles each having a periphery comprises an isolating device including one or more isolating members which are movable between a hold position spaced from the stack of articles, and a dispense position contacting the periphery of one or more articles in the stack and supporting the one or more articles including an adjacent article which is adjacent an endmost article while not contacting the periphery of the endmost article by the one or more isolating members, to isolate the endmost article from the other articles in the stack to permit the endmost article to be separated from the other articles and be dispensed.

摘要翻译： 本发明涉及一种更坚固的物品分配装置，其在清洁和保护环境中分配物品的结构和使用相对简单。 更具体地，该装置一次接收，分离和分配物品与嵌套的诸如饮料杯盖的物品堆叠。 在一个实施例中，一种用于从每个具有周边的物品的堆叠中分配物品的分配设备包括隔离装置，该隔离装置包括一个或多个隔离构件，所述隔离构件可在与物品堆叠间隔开的保持位置和与物品堆叠物接触的分配位置 一个或多个物品的周边，并且支撑一个或多个物品，其包括邻近最终物品的相邻物品，同时不通过一个或多个隔离构件接触最末端物品的周边，以将最末端物品与 堆叠中的其他物品允许最后面的物品与其他物品分离并被分配。

公开(公告)号：US20070007624A1

公开(公告)日：2007-01-11

申请号：US11179052

申请日：2005-07-11

申请人： Christian Kapteyn ,  Stephan Kudelka ,  Thomas Hecht

发明人： Christian Kapteyn ,  Stephan Kudelka ,  Thomas Hecht

IPC分类号： H01L29/00

CPC分类号： H01L28/40

摘要： The present invention relates to a method of fabricating a capacitor in a semiconductor substrate. The capacitor is fabricated such that the capacitor comprises: a trench inside a substrate, the trench having a lower region and an upper region, wherein the trench's diameters in the lower region is larger than in the upper region; a first electrode; a dielectric layer on top of the first electrode; a conductive layer on top of the electric layer, the conductive layer forming a second electrode of the capacitor; and a plug forming a closed cavity inside the lower region.

摘要翻译： 本发明涉及在半导体衬底中制造电容器的方法。 电容器被制造成使得电容器包括：衬底内的沟槽，沟槽具有下部区域和上部区域，其中下部区域中的沟槽直径大于上部区域中的沟槽直径; 第一电极; 位于所述第一电极顶部的电介质层; 在所述电层顶部的导电层，所述导电层形成所述电容器的第二电极; 以及在下部区域内形成闭合腔的塞子。

公开(公告)号：US07144770B2

公开(公告)日：2006-12-05

申请号：US10980069

申请日：2004-11-03

申请人： Albert Birner ,  Matthias Foerster ,  Thomas Hecht ,  Michael Stadtmueller ,  Andreas Orth

发明人： Albert Birner ,  Matthias Foerster ,  Thomas Hecht ,  Michael Stadtmueller ,  Andreas Orth

IPC分类号： H01L21/8242

CPC分类号： H01L29/66181 ,  H01L29/945

摘要： The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).

摘要翻译： 本发明提供了一种用于制造存储单元的方法，提供了一种衬底（101），蚀刻到衬底（101）中的沟槽型凹陷（102），在沟槽中非保形地沉积的阻挡层（103） 型凹陷（102），在沟槽型凹部（102）的内部区域上生长的晶粒元素（104），沉积在晶粒元素的表面上的介电层（202）和沟槽的内部区域 型凹陷，并且导电层沉积在电介质层上，晶粒元素（104）选择性地生长在形成下部区域的电极区域（301）中的沟槽型凹陷（102）的内部区域（105） 的沟槽型凹陷（102）和在形成沟槽型凹陷（102）的上部区域的凸缘区域（302）中继续生长的非晶硅层。

公开(公告)号：US20060264054A1

公开(公告)日：2006-11-23

申请号：US11100325

申请日：2005-04-06

申请人： Martin Gutsche ,  Thomas Hecht ,  Harald Seidl ,  Uwe Rudolph ,  Barbara Lorenz ,  Elisabeth Weikmann

发明人： Martin Gutsche ,  Thomas Hecht ,  Harald Seidl ,  Uwe Rudolph ,  Barbara Lorenz ,  Elisabeth Weikmann

IPC分类号： H01L21/465

CPC分类号： H01L21/30655 ,  H01L21/743 ,  H01L21/76898

摘要： The present invention relates to a method for etching a trench in a semiconductor substrate. More specifically, the present invention relates to a method for etching deep trenches such as those having aspect ratios of 30 and higher. According to embodiments of the invention, a method for etching a trench in a semiconductor substrate includes a first etch cycle wherein the trench is etched to a first depth. Thereafter, a protective liner is deposited on at least the upper part of the trench's sidewalls. The protective liner includes inorganic material. During at least one second etch cycle, the trench is etched to its final depth.

摘要翻译： 本发明涉及一种用于蚀刻半导体衬底中的沟槽的方法。 更具体地说，本发明涉及一种蚀刻深沟槽的方法，例如具有30或更高的纵横比的那些。 根据本发明的实施例，用于蚀刻半导体衬底中的沟槽的方法包括第一蚀刻循环，其中沟槽被蚀刻到第一深度。 此后，保护性衬垫至少沉积在沟槽侧壁的上部。 保护性衬垫包括无机材料。 在至少一个第二蚀刻周期期间，将沟槽蚀刻到其最终深度。

公开(公告)号：US20060202250A1

公开(公告)日：2006-09-14

申请号：US11076021

申请日：2005-03-10

申请人： Thomas Hecht ,  Uwe Schroeder ,  Till Schloesser ,  Stefan Jakschik ,  Alejandro Avellan

发明人： Thomas Hecht ,  Uwe Schroeder ,  Till Schloesser ,  Stefan Jakschik ,  Alejandro Avellan

IPC分类号： H01L29/94

CPC分类号： H01L27/10852 ,  H01L27/0207 ,  H01L28/82

摘要： A storage capacitor, suitable for use in a DRAM cell, is at least partially formed above a substrate surface and includes: a storage electrode at least partially formed above the substrate surface, a dielectric layer formed adjacent the storage electrode, and a counter electrode formed adjacent the dielectric layer, the counter electrode being isolated from the storage electrode by the dielectric layer, wherein the storage electrode is formed as a body which is delimited by at least one curved surface having a center of curvature outside the body in a plane parallel to the substrate surface. According to another configuration, the storage electrode is formed as a body which is delimited by at least one set having two contiguous planes, the two planes extending perpendicularly with respect to the substrate surface, a point of intersection of normals of the two planes lying outside the body.

摘要翻译： 适用于DRAM单元的存储电容器至少部分地形成在衬底表面之上，并且包括：至少部分地形成在衬底表面上方的存储电极，与存储电极相邻形成的电介质层和形成的对电极 所述对置电极通过所述电介质层与所述存储电极隔离，其中所述存储电极形成为主体，所述主体由平行于所述电介质层的平面中的具有在所述主体外部的曲率中心的至少一个曲面限定 基材表面。 根据另一种结构，存储电极形成为由具有两个相邻平面的至少一组限定的主体，两个平面相对于基板表面垂直延伸，两个平面的法线相交点位于外部 身体。

公开(公告)号：US07087485B2

公开(公告)日：2006-08-08

申请号：US10765052

申请日：2004-01-28

申请人： Harald Seidl ,  Martin Gutsche ,  Thomas Hecht

发明人： Harald Seidl ,  Martin Gutsche ,  Thomas Hecht

IPC分类号： H01L21/8242

CPC分类号： H01L21/3141 ,  H01L21/31116 ,  H01L27/1087

摘要： A method for fabricating patterned ceramic layers on areas of a relief structure, wherein the layers may be arranged essentially perpendicular to a top side of a substrate. In exemplary embodiments, a patterned ceramic layer forms an oxide collar for a trench capacitor. The oxide collar is produced by a trench firstly being filled with a resist in its lower section, and an oxide layer subsequently being produced on the uncovered areas of the substrate with the aid of a low temperature ALD method. By means of anisotropic etching, only those portions of the ceramic layer which are arranged at the perpendicular walls of the trench remain. The resist filling may subsequently be removed, for example, by means of an oxygen plasma.

摘要翻译： 一种用于在浮雕结构的区域上制造图案化陶瓷层的方法，其中所述层可以布置成基本上垂直于衬底的顶侧。 在示例性实施例中，图案化陶瓷层形成用于沟槽电容器的氧化物环。 氧化物套环由首先在其下部填充有抗蚀剂的沟槽产生，随后在低温ALD方法的帮助下在衬底的未覆盖区域上产生氧化物层。 通过各向异性蚀刻，仅保留布置在沟槽的垂直壁处的陶瓷层的那些部分。 可以随后例如通过氧等离子体去除抗蚀剂填充。

公开(公告)号：US20050277295A1

公开(公告)日：2005-12-15

申请号：US11147892

申请日：2005-06-08

申请人： Thomas Hecht ,  Stefan Jakschik ,  Uwe Schroder

发明人： Thomas Hecht ,  Stefan Jakschik ,  Uwe Schroder

IPC分类号： C23C14/04 ,  C23C16/02 ,  C23C16/04 ,  C23C16/40 ,  H01L21/20 ,  H01L21/283 ,  H01L21/285 ,  H01L21/31 ,  H01L21/314 ,  H01L21/44 ,  H01L21/469 ,  H01L21/66 ,  H01L21/762 ,  H01L21/768

CPC分类号： C23C16/0281 ,  C23C14/046 ,  C23C16/045 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/76877 ,  H01L22/26

摘要： The present invention provides a coating process for patterned substrate surfaces, in which a substrate (101) is provided, the substrate having a surface (105) which is patterned in a substrate patterning region (102) and has one or more trenches (106) that are to be filled to a predetermined filling height (205), a catalyst layer (201) is introduced into the trenches (106) that are to be filled, a reaction layer (202) is deposited catalytically in the trenches (106) that are to be filled, the catalytically deposited reaction layer (202) is densified in the trenches (106) that are to be filled, and the introduction of the catalyst layer (201) and the catalytic deposition of the reaction layer (202) are repeated until the trenches (106) that are to be filled have been filled to the predetermined filling height (205).

摘要翻译： 本发明提供一种用于图案化衬底表面的涂覆方法，其中提供衬底（101），该衬底具有在衬底图案化区域（102）中被图案化并具有一个或多个沟槽（106）的表面（105） 将其填充到预定的填充高度（205），将催化剂层（201）引入要填充的沟槽（106）中，在沟槽（106）中催化沉积反应层（202），其中 要填充的催化沉积反应层（202）在要填充的沟槽（106）中致密化，并且重复引入催化剂层（201）和催化沉积反应层（202） 直到要填充的沟槽（106）已经被填充到预定填充高度（205）。

公开(公告)号：US20050194397A1

公开(公告)日：2005-09-08

申请号：US10837542

申请日：2004-04-27

申请人： Thomas Hecht

发明人： Thomas Hecht

IPC分类号： B65H3/28 ,  G07F11/16

CPC分类号： G07F11/16

摘要： The present invention relates to a more robust article dispensing apparatus that is relatively simple in construction and usage for dispensing articles in a clean and protective environment. More specifically, the apparatus accepts, separates, and dispenses articles from a nested stack of articles such as beverage cup lids one at a time. In one embodiment, a dispensing apparatus for dispensing an article from a stack of articles each having a periphery comprises an isolating device including one or more isolating members which are movable between a hold position spaced from the stack of articles, and a dispense position contacting the periphery of one or more articles in the stack and supporting the one or more articles including an adjacent article which is adjacent an endmost article while not contacting the periphery of the endmost article by the one or more isolating members, to isolate the endmost article from the other articles in the stack to permit the endmost article to be separated from the other articles and be dispensed.

摘要翻译： 本发明涉及一种更坚固的物品分配装置，其在清洁和保护环境中分配物品的结构和使用相对简单。 更具体地，该装置一次接收，分离和分配物品与嵌套的诸如饮料杯盖的物品堆叠。 在一个实施例中，一种用于从每个具有周边的物品的堆叠中分配物品的分配设备包括隔离装置，该隔离装置包括一个或多个隔离构件，所述隔离构件可在与物品堆叠间隔开的保持位置和与物品堆叠物接触的分配位置 一个或多个物品的周边，并且支撑一个或多个物品，其包括邻近最终物品的相邻物品，同时不通过一个或多个隔离构件接触最末端物品的周边，以将最末端物品与 堆叠中的其他物品允许最后面的物品与其他物品分离并被分配。

公开(公告)号：US20050127421A1

公开(公告)日：2005-06-16

申请号：US10502930

申请日：2003-01-16

申请人： Harald Seidl ,  Jorn Lutzen ,  Gerhard Beitel ,  Thomas Hecht ,  Annette Sanger ,  Albert Birner

发明人： Harald Seidl ,  Jorn Lutzen ,  Gerhard Beitel ,  Thomas Hecht ,  Annette Sanger ,  Albert Birner

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/8242 ,  H01L29/51 ,  H01L27/108

CPC分类号： H01L21/28194 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/314 ,  H01L27/1085 ,  H01L27/10861 ,  H01L27/10873 ,  H01L28/40 ,  H01L29/517

摘要： A semiconductor module is described which is essentially constructed from a silicon material and has an insulation layer for example in the form of a gate insulation layer or a MOS transistor or in the form of an insulation layer of a memory cell for a dynamic memory module. The insulation layer preferably comprises a dielectric material whose band gap is greater than the band gap of SiO2. To construct the insulation layer, use is made of materials which have a metal-fluorine compound, such as e.g. lithium fluoride. Particularly thin insulation layers are provided by the material described.

摘要翻译： 描述了一种半导体模块，其基本上由硅材料构成，并且具有例如栅极绝缘层或MOS晶体管形式的绝缘层，或以动态存储器模块的存储单元的绝缘层的形式。 绝缘层优选地包括其带隙大于SiO 2带隙的电介质材料。 为了构造绝缘层，使用具有金属 - 氟化合物的材料，例如， 氟化锂。 通过所述材料提供特别薄的绝缘层。