公开(公告)号：US10032931B2

公开(公告)日：2018-07-24

申请号：US13243244

申请日：2011-09-23

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/26 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/28 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12

摘要： A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

公开(公告)号：US20110045985A1

公开(公告)日：2011-02-24

申请号：US12934931

申请日：2009-02-20

申请人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

发明人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

IPC分类号： C22C30/00 ,  H01L39/00 ,  H01L39/24 ,  C22C30/02

CPC分类号： C01G55/002 ,  C01B25/088 ,  C01G49/009 ,  C01G53/006 ,  C01P2002/22 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40 ,  C01P2006/42 ,  H01L39/125

摘要： A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).

摘要翻译： 一种超导体，其包含取代钙钛矿铜氧化物的新化合物组合物。 超导体的特征在于包含由化学式A（TM）2Pn2表示的化合物[其中A是选自组1中的元素，组2中的元素或组3中的元素（Sc ，Y和稀土金属元素）; TM是选自过渡金属元素Fe，Ru，Os，Ni，Pd或Pt中的至少一种; 并且Pn是选自第15族元素（pnicogen元素）中的至少一种元素]，并且其具有包含与元素（A）的金属层交替的（TM）Pn层的无限层晶体结构。

公开(公告)号：US07696386B2

公开(公告)日：2010-04-13

申请号：US12441780

申请日：2007-09-28

申请人： Hideo Hosono ,  Haritha Buchammagari ,  Yoshitake Toda ,  Masahiro Hirano ,  Kohtaro Osakada ,  Daisuke Takeuchi

发明人： Hideo Hosono ,  Haritha Buchammagari ,  Yoshitake Toda ,  Masahiro Hirano ,  Kohtaro Osakada ,  Daisuke Takeuchi

IPC分类号： C07C45/00 ,  C07C31/18 ,  C07C29/16

CPC分类号： C07C45/72 ,  C07B41/02 ,  C07C29/143 ,  C07C29/38 ,  C07C41/26 ,  C07C41/30 ,  C07C45/73 ,  C07C46/00 ,  C07C253/30 ,  C07C31/22 ,  C07C31/42 ,  C07C31/20 ,  C07C49/83 ,  C07C49/835 ,  C07C50/20 ,  C07C255/53 ,  C07C43/23

摘要： The invention is a process of using, as a reducing agent, a 12CaO.7Al2O3 electride containing electrons in a number of 1019 or more and 2.3×1021 cm−3 or less in its cages to subject a carbonyl compound to reductive coupling in a solvent, thereby synthesizing a diol or polydiol. The invention is also a process of reducing a ketone compound in a solvent, thereby synthesizing a secondary alcohol or diketone compound. According to the process of the invention, it is possible to synthesize a diol or polydiol, or a secondary alcohol or diketone compound through simple operations in a short period without using an expensive and harmful metal hydride or metal salt nor limiting the atmosphere for the synthesis to an inert gas atmosphere as in conventional processes.

摘要翻译： 本发明是在其笼中使用含有1019以上且2.3×1021cm-3以下的电子的12CaO·7H 2 O 3电极作为还原剂的方法，以使羰基化合物在溶剂中还原偶联 ，从而合成二醇或聚二醇。 本发明也是在溶剂中还原酮化合物的方法，从而合成仲醇或二酮化合物。 根据本发明的方法，可以在短时间内通过简单的操作合成二醇或多元醇或仲醇或二酮化合物，而不使用昂贵且有害的金属氢化物或金属盐，也不限制合成气氛 到惰性气体气氛中，如常规方法。

公开(公告)号：US07323356B2

公开(公告)日：2008-01-29

申请号：US10505219

申请日：2003-02-19

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

IPC分类号： H01L21/06 ,  C30B1/02 ,  C04B35/50

CPC分类号： C30B33/00 ,  C30B1/02 ,  C30B23/02 ,  C30B29/22 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02631 ,  H01L29/24 ,  H01L33/26

摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.

摘要翻译： 公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种）， 其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火 。 或者更多。 虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发射效率和电子迁移率的多晶物质 或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体雷达，场效应晶体管或异质双极晶体管的建筑物黑色。

公开(公告)号：US20070194379A1

公开(公告)日：2007-08-23

申请号：US10592431

申请日：2005-02-28

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L27/12

CPC分类号： H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

摘要翻译： 本发明涉及使用该无定形氧化物的无定形氧化物和薄膜晶体管。 特别地，本发明提供了电子载流子浓度小于10/30/3的非晶氧化物，以及使用这种无定形氧化物的薄膜晶体管。 在具有源电极6，漏电极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，电子载流子浓度小于10 18的非晶氧化物， 在通道层2中使用SUP> / cm 3 3。

公开(公告)号：US07061014B2

公开(公告)日：2006-06-13

申请号：US10494247

申请日：2002-10-31

申请人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

发明人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L29/7869 ,  C30B23/02 ,  C30B29/22 ,  C30B29/68 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693

摘要： Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

摘要翻译： 公开了一种天然超晶格同源单晶薄膜，其包括外延生长在单晶衬底上形成的ZnO外延薄膜之一上的复合氧化物，ZnO外延消失后的单晶衬底 薄膜和ZnO单晶。 复合氧化物由下式表示：其中M（M）2 O 3（ZnO）m，其中M 至少一种选自Ga，Fe，Sc，In，Lu，Yb，Tm，Er，Ho和Y中的至少一种，M 2至少为 选自Mn，Fe，Ga，In和Al中的一种，m为1以上的自然数。 通过沉积复合氧化物并使得到的层状膜进行热退火处理而形成的天然超晶格同晶单晶薄膜可以用于最佳器件，电子器件和X射线光学器件中。

公开(公告)号：US09605357B2

公开(公告)日：2017-03-28

申请号：US14343719

申请日：2012-03-09

申请人： Tomofumi Susaki ,  Hideo Hosono ,  Tadahiro Fujihashi ,  Yoshitake Toda

发明人： Tomofumi Susaki ,  Hideo Hosono ,  Tadahiro Fujihashi ,  Yoshitake Toda

IPC分类号： C30B23/02 ,  C30B23/06 ,  B01D53/02 ,  C30B29/16 ,  B01J20/04 ,  B01J20/32

CPC分类号： C30B23/066 ,  B01D53/02 ,  B01D2253/1124 ,  B01D2253/25 ,  B01D2257/504 ,  B01J20/041 ,  B01J20/3204 ,  B01J20/3236 ,  C30B23/025 ,  C30B29/16 ,  Y02C10/08

摘要： A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.

公开(公告)号：US08203146B2

公开(公告)日：2012-06-19

申请号：US12882404

申请日：2010-09-15

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/20

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

公开(公告)号：US20110012107A1

公开(公告)日：2011-01-20

申请号：US12882647

申请日：2010-09-15

申请人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/22

CPC分类号： H01L29/51 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

摘要翻译： 提供了一种采用无定形氧化物的新型场效应晶体管。 在本发明的一个实施例中，晶体管包括含有浓度小于1×10-18 / cm3的电子载流子的无定形氧化物层，栅极绝缘层由与非晶氧化物接触的第一层 以及与第一层不同的第二层。

公开(公告)号：US07872259B2

公开(公告)日：2011-01-18

申请号：US11269768

申请日：2005-11-09

申请人： Tohru Den ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Tohru Den ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/20

CPC分类号： H01L27/1225 ,  G03G5/08 ,  G03G5/144 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2251/5315

摘要： An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

摘要翻译： 本发明的目的是提供一种使用无定形氧化物的新的发光装置。 发光器件具有存在于第一和第二电极之间的发光层和场效应晶体管，其中有源层是无定形的。