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公开(公告)号：US07589357B2
公开(公告)日：2009-09-15
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US07372077B2
公开(公告)日：2008-05-13
申请号：US10766031
申请日：2004-01-29
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US20070235750A1
公开(公告)日：2007-10-11
申请号：US11806709
申请日：2007-06-04
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。
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公开(公告)号：US20050220159A1
公开(公告)日：2005-10-06
申请号：US11092947
申请日：2005-03-30
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译： 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。
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公开(公告)号：US20050218420A1
公开(公告)日：2005-10-06
申请号：US11076963
申请日：2005-03-11
CPC分类号： H01S5/02272 , H01L2224/48463 , H01S5/02469 , H01S5/22 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.
摘要翻译： 蓝紫色半导体激光器件具有形成在其上表面上的p电极和形成在其下表面上的n电极。 在蓝紫色半导体激光器件中，形成p-n结表面，其中p型半导体和n型半导体接合。 红色半导体激光器件具有形成在其上表面上的n电极和形成在其下表面上的p电极。 在红色半导体激光器件中，形成p型半导体和n型半导体的p-n结表面。 红色半导体激光器件的p电极被接合到蓝紫色半导体激光器件的p电极，使得红色半导体激光器件不与蓝紫色的蓝紫色光束发射点重叠 半导体激光器件。
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公开(公告)号：US07941196B2
公开(公告)日：2011-05-10
申请号：US11900228
申请日：2007-09-10
IPC分类号： H04M1/00
CPC分类号： H04M1/18 , H04B1/3888 , H04M1/0249
摘要： A waterproof structure for a casing has a first casing, a second casing to be put together with the first casing, and a waterproof member formed of an elastic material to prevent water from penetrating between the first casing and the second casing. The second casing has a recess. The waterproof member has a peripheral part which, when fitted into the recess, prevents penetration of water. The peripheral part is provided at the periphery of the waterproof member, which is laid out all around space between the first casing and the second casing. A projection engages with a dent. A restriction part of the first casing, provided at a position facing the peripheral part and protruding toward the second casing, prevents the peripheral part from coming out.
摘要翻译： 用于壳体的防水结构具有第一壳体，与第一壳体放在一起的第二壳体和由弹性材料形成的防水构件，以防止水在第一壳体和第二壳体之间穿透。 第二壳体具有凹部。 防水构件具有周边部，该周边部在嵌入凹部时防止水的渗透。 外围部分设置在防水构件的周围，其布置在第一壳体和第二壳体之间的整个空间周围。 一个突起与一个凹痕啮合。 第一壳体的限制部分设置在面向周边部分并朝向第二壳体突出的位置，防止周边部件脱出。
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公开(公告)号：US20100003778A1
公开(公告)日：2010-01-07
申请号：US12274435
申请日：2008-11-20
申请人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
发明人： Hitoshi Tada , Tsutomu Yamaguchi , Zempei Kawazu , Yuji Okura
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01S5/2081 , H01S5/209 , H01S5/2214 , H01S5/2224
摘要： A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.
摘要翻译： 半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层， 在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。
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公开(公告)号：US20090022197A1
公开(公告)日：2009-01-22
申请号：US12104756
申请日：2008-04-17
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
摘要翻译： 半导体激光元件形成在公共基板上。 在其他半导体激光元件的主表面上形成Au电镀。 半导体激光器元件安装在具有焊料应用于Au镀层的封装上。 在每个半导体激光元件的发光区域彼此相对的区域被指定为第一和第二区域。 在每个半导体激光元件的第一和第二区域中，Au镀层的平均厚度不同。
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公开(公告)号：US20060021490A1
公开(公告)日：2006-02-02
申请号：US11185857
申请日：2005-07-21
申请人： Tsutomu Yamaguchi
发明人： Tsutomu Yamaguchi
IPC分类号： G10C3/18
CPC分类号： G10C3/12
摘要： A high-quality keyboard device for a keyboard instrument, which can be manufactured by a simplified manufacturing process and at reduced manufacturing costs. A keyframe is formed by a molded piece of a synthetic resin. A plurality of front rail pins and a plurality of balance rail pins are arranged in a juxtaposed manner in a left-right direction at a front part and a central part of the keyframe in a front-rear direction. A plurality of keys are made of wood and each have a balance rail pin hole formed in a central portion thereof in the front-rear direction. A first reinforcing member and a second reinforcing member are made of metal and provided in the vicinity of the balance rail pins and the front rail pins for reinforcement of rigidity of the keyframe. The keys are swingably supported on the keyframe in a state where the balance rail pins are each engaged with the balance rail pin hole associated therewith and at the same time the keys are prevented from being swung in the left-right direction by the front rail pins associated therewith.
摘要翻译： 用于键盘乐器的高品质键盘装置，其可以通过简化的制造过程和降低的制造成本来制造。 关键帧由合成树脂的模制件形成。 多个前轨销和多个平衡轨销在前后方向上以关键框的前部和中心部分沿左右方向并列布置。 多个键由木材制成，并且每个键具有在前后方向上形成在其中心部分的平衡导轨销孔。 第一加强构件和第二加强构件由金属制成并且设置在平衡轨销和前导轨销附近，用于加强关键框架的刚性。 在平衡轨销彼此相配合的平衡轨针销孔的状态下，键被可摆动地支撑在关键帧上，同时通过前导轨销防止键在左右方向上摆动 相关联。
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公开(公告)号：US5036743A
公开(公告)日：1991-08-06
申请号：US442616
申请日：1989-11-29
摘要： A keyboard device has a key, a support for the key, the key being rotatably mounted on the key support, a hammer, a support for the hammer, the hammer being rotatably mounted on the hammer support, a resilient member for urging the key to swing in a direction which is the same as the direction of swinging of the key when the key is depressed and for urging the hammer to swing in a direction which is opposite to the direction of swinging of the hammer when the key is depressed. The resilient member has a first end coupled to the key and a second end coupled to the hammer.
摘要翻译： 键盘装置具有钥匙，钥匙的支撑件，钥匙可旋转地安装在钥匙支架上，锤子，用于锤子的支撑件，锤子可旋转地安装在锤子支撑件上，弹性元件用于将钥匙推到 当按键被按压时，在与键的摆动方向相同的方向上摆动，并且当琴键被按下时，用于推动锤与锤的摆动方向相反的方向摆动。 弹性构件具有联接到键的第一端和联接到锤的第二端。
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