Abstract:
According to various embodiments, a method for processing a carrier may include: co-depositing at least one metal from a first source and carbon from a second source over a surface of the carrier to form a first layer; forming a second layer over the first layer, the second layer including a diffusion barrier material, wherein the solubility of carbon in the diffusion barrier material is less than in the at least one metal; and forming a graphene layer at the surface of the carrier from the first layer by a temperature treatment.
Abstract:
A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including graphene or carbon nanotubes.
Abstract:
In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.
Abstract:
Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.
Abstract:
A gas sensor for measuring a concentration of carbon dioxide in a gas environment (GE) is provided. The gas sensor includes a graphene layer having a side facing towards the gas environment (GE), an electrode layer including a plurality of electrodes electrically connected to the graphene layer, and a chalcogenide layer covering at least a part of the side of the graphene layer facing towards the gas environment (GE).
Abstract:
A sensor arrangement according to an embodiment includes a substrate, and at least one sensor and a control circuit mounted on the substrate, wherein the at least one sensor and the control circuit are located on the substrate to be mountable inside a battery cell and outside the battery cell, respectively.
Abstract:
A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including graphene or carbon nanotubes.
Abstract:
A power semiconductor device includes a wiring structure adjoining at least one side of a semiconductor body and comprising at least one electrically conductive compound. The power semiconductor device further includes a cooling material in the wiring structure. The cooling material is characterized by a change in structure by means of absorption of energy at a temperature TC ranging between 150° C. and 400° C.
Abstract:
Embodiments provide a MEMS including a MEMS device and an detector circuit. The MEMS device includes a membrane, wherein a material of the membrane comprises a band gap and a crystal structure with structural elements (unit cells) connected by covalent bonds in two dimensions only. The detector circuit is configured to determine a deformation of the membrane based on a piezoresistive resistance of the material of the membrane.
Abstract:
A sensor module includes an enclosure adapted to hermetically seal an opening or a hole on the outer surface of a casing or packaging, a sensor element and a membrane. The membrane is arranged between the enclosure and the opening or hole of the casing or packaging.