Methods and apparatus for in-pixel driving of micro-LEDs

    公开(公告)号:US11676529B2

    公开(公告)日:2023-06-13

    申请号:US16726200

    申请日:2019-12-23

    Inventor: Khaled Ahmed

    CPC classification number: G09G3/32 H01L25/0753 H01L27/1214 G09G2330/021

    Abstract: Methods and apparatus for in-pixel driving of micro-light-emitting diodes are disclosed. An example light-emitting diode driver includes a first input node to receive a data signal, a second input node to receive a reference signal having a first frequency, and a driver circuit including thin-film transistors to output a current pulse for driving a light-emitting diode, the current pulse having a width based on the data signal and the reference signal, the output signal having a second frequency that is greater than the first frequency.

    Micro light-emitting diode displays having hybrid inorganic-organic pixel structures

    公开(公告)号:US11610874B2

    公开(公告)日:2023-03-21

    申请号:US16455675

    申请日:2019-06-27

    Abstract: Micro light-emitting diode displays having hybrid inorganic-organic pixel structures and methods of fabricating micro light-emitting diode displays having hybrid inorganic-organic pixel structures are described. In an example, a micro light emitting diode pixel structure includes a plurality of inorganic micro light emitting diode devices in a dielectric layer. An organic light emitting diode device is in the dielectric layer and laterally adjacent to the plurality of inorganic micro light emitting diode devices. A transparent conducting oxide layer is above the dielectric layer and can act as a common cathode electrode for the inorganic and organic light emitting diodes.

    III-N multichip modules and methods of fabrication

    公开(公告)号:US11211245B2

    公开(公告)日:2021-12-28

    申请号:US16890937

    申请日:2020-06-02

    Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

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