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    Backside device contact
    44.
    发明授权
    Backside device contact 有权
    背面设备联系人

    公开(公告)号：US09455187B1

    公开(公告)日：2016-09-27

    申请号：US14742958

    申请日：2015-06-18

    Applicant: International Business Machines Corporation

    Inventor： Jeffrey P. Gambino ,  Mark D. Jaffe ,  Steven M. Shank ,  Anthony K. Stamper

    IPC: H01L21/30 ,  H01L21/768 ,  H01L21/762 ,  H01L21/683

    CPC classification number: H01L23/528 ,  H01L21/6835 ,  H01L21/76224 ,  H01L21/76251 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/76898 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/1203 ,  H01L29/0649 ,  H01L2221/68327 ,  H01L2221/68372

    Abstract: Methods for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. A trench is formed that extends through the device layer or a trench isolation region in the device layer and that further extends partially through the buried insulator layer. A sacrificial material is deposited in the trench and, thereafter, at least one dielectric layer is formed on the device layer. An opening is formed in the at least one dielectric layer that communicates with the trench. After the opening is formed, the sacrificial material is removed from the trench with access through the opening. After the sacrificial material is removed from the trench, the trench is filled with a contact plug and the opening is filled with a contact coupled with the contact plug.

    Abstract translation: 使用包括器件层，埋入绝缘体层和处理晶片的绝缘体上硅衬底制造背面器件接触的方法。 形成沟槽，其延伸穿过器件层中的器件层或沟槽隔离区域，并进一步延伸穿过掩埋绝缘体层。 牺牲材料沉积在沟槽中，此后在器件层上形成至少一个电介质层。 在与沟槽连通的至少一个电介质层中形成开口。 在形成开口之后，通过开口进入牺牲材料从沟槽移除。 在牺牲材料从沟槽移除之后，沟槽填充有接触塞，并且开口填充有与接触插塞相连的触点。

    Butt-coupled buried waveguide photodetector
    50.
    发明授权
    Butt-coupled buried waveguide photodetector 有权
    对接耦合埋地波导光电探测器

    公开(公告)号：US09229164B2

    公开(公告)日：2016-01-05

    申请号：US13868477

    申请日：2013-04-23

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  William M. Green ,  Steven M. Shank ,  Yurii A. Vlasov

    IPC: H01L31/18 ,  H01L31/08 ,  H01L31/0232 ,  G02B6/13 ,  G02B6/12 ,  G02B6/132

    CPC classification number: G02B6/13 ,  G02B6/12004 ,  G02B6/132

    Abstract: A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolates the first and second silicon-on-insulator region. Within the STI region, a germanium material is deposited adjacent an end facet of the semiconductor optical waveguide. The germanium material forms an active region that receives propagating optical signals from the end facet of the semiconductor optical waveguide.

    Abstract translation: 形成具有光电检测器和CMOS器件的集成光子半导体结构的方法可以包括在绝缘体上的第一绝缘体区域上形成CMOS器件，在第二绝缘体上硅区域上形成硅光波导，并形成 浅沟槽隔离（STI）区域，使得浅沟槽隔离电隔离第一和第二绝缘体上硅区域。 在STI区域内，锗材料沉积在半导体光波导的端面附近。 锗材料形成从半导体光波导的端面接收传播光信号的有源区。

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