公开(公告)号：US20220359843A1

公开(公告)日：2022-11-10

申请号：US17732666

申请日：2022-04-29

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Takumi SANO

IPC: H01L51/44 ,  H01L27/30

Abstract: According to one embodiment, a sensor device includes an insulating base including a meandering strip-shaped portion and an island-shaped portion, a first inorganic insulating film on the island-shaped portion, a first wiring layer on the first inorganic insulating film, a second inorganic insulating film on the first wiring layer, a second wiring layer on the second inorganic insulating film, an organic insulating film on the second wiring layer, a barrier film covering the organic insulating film, a sensor element on the barrier film, and a sealing film covering the sensor element. The barrier film covers side surfaces of the organic insulating film, and the sealing film is in contact with the barrier film and the second inorganic insulating film.

公开(公告)号：US20220238825A1

公开(公告)日：2022-07-28

申请号：US17720366

申请日：2022-04-14

Applicant: Japan Display Inc.

Inventor： Marina MOCHIZUKI ,  Isao SUZUMURA

IPC: H01L51/44 ,  H01L51/42

Abstract: The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.

公开(公告)号：US20210391359A1

公开(公告)日：2021-12-16

申请号：US17459423

申请日：2021-08-27

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Akihiro HANADA ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US20210320158A1

公开(公告)日：2021-10-14

申请号：US17304569

申请日：2021-06-23

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: H01L27/32 ,  G02F1/1333

Abstract: The purpose of the present invention is to increase ON current of the oxide semiconductor thin film transistor. An example of the structure that attains the purpose is: a display device having a substrate and a thin film transistor of an oxide semiconductor formed on the substrate including: a thickness of a source region and a drain region is thicker than a thickness of a channel region of the oxide semiconductor, the channel region has projections at portions contacting the source region and the drain region, a thickness of the projection is thicker than a thickness of the center of the channel region, and a thickness of the projection is thicker than a thickness of the source region and the drain region.

公开(公告)号：US20180308869A1

公开(公告)日：2018-10-25

申请号：US16011725

申请日：2018-06-19

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Kazufumi WATABE ,  Yoshinori ISHII ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US20170059918A1

公开(公告)日：2017-03-02

申请号：US15234090

申请日：2016-08-11

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI ,  Isao SUZUMURA ,  Shinichiro OKA ,  Takuma NISHINOHARA

IPC: G02F1/1333 ,  G02F1/1341 ,  G02F1/1339

CPC classification number: G02F1/133345 ,  G02F1/133305 ,  G02F1/13394 ,  G02F2202/022 ,  G02F2202/28

Abstract: A display device includes a first resin substrate; a second resin substrate facing the first. resin substrate; a liquid crystal layer held between the first resin substrate and the second resin substrate; a first insulating film located between the first resin substrate and the liquid crystal layer; a second insulating film located between the first insulating film and the liquid crystal layer, the second insulating film having a compressive stress; a third insulating film located between the second resin substrate and the liquid crystal layer; a fourth insulating film located between the second insulating film. and the liquid crystal layer, the fourth insulating film having a compressive stress; and a plurality of spacers located between the first resin substrate and the second resin substrate, the plurality of spacers defining an interval between the first resin substrate and the second resin substrate.

Abstract translation: 显示装置包括第一树脂基板; 面向第一树脂基板的第二树脂基板。 树脂基材; 保持在所述第一树脂基板和所述第二树脂基板之间的液晶层; 位于第一树脂基板和液晶层之间的第一绝缘膜; 位于第一绝缘膜和液晶层之间的第二绝缘膜，第二绝缘膜具有压应力; 位于第二树脂基板和液晶层之间的第三绝缘膜; 位于第二绝缘膜之间的第四绝缘膜。 和液晶层，第四绝缘膜具有压应力; 以及位于所述第一树脂基板和所述第二树脂基板之间的多个间隔件，所述多个间隔件限定所述第一树脂基板和所述第二树脂基板之间的间隔。

公开(公告)号：US20130334524A1

公开(公告)日：2013-12-19

申请号：US13915671

申请日：2013-06-12

Applicant: Japan Display Inc.

Inventor： Hidekazu MIYAKE ,  Norihiro UEMURA ,  Takeshi NODA ,  Isao SUZUMURA ,  Toshiki KANEKO

IPC: H01L27/12

CPC classification number: H01L27/1244 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3244

Abstract: The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate electrodes; an oxide semiconductor formed on the gate insulating film; drain electrodes and source electrodes formed at a distance from each other with channel regions of the oxide semiconductor in between; an interlayer capacitor film for covering the drain electrodes and source electrodes; common electrodes formed on top of the interlayer capacitor film; and pixel electrodes formed so as to face the common electrodes, and wherein an etching stopper layer for covering the channel regions is formed between the oxide semiconductor and the drain electrodes and source electrodes, the drain electrodes are a multilayer film where a transparent conductive film and a metal film are layered on top of each other, and the drain electrodes and source electrodes make direct contact with the oxide semiconductor.

Abstract translation: 本发明提供一种显示装置，具有：形成在透明基板上的栅电极; 用于覆盖栅电极的栅极绝缘膜; 形成在栅极绝缘膜上的氧化物半导体; 漏电极和源极之间形成有一定距离的氧化物半导体的沟道区; 用于覆盖漏电极和源电极的层间电容膜; 公共电极形成在层间电容器膜的顶部; 以及形成为与公共电极相对的像素电极，并且其中在氧化物半导体与漏电极和源电极之间形成用于覆盖沟道区的蚀刻停止层，漏电极是多层膜，其中透明导电膜和 金属膜层叠在一起，漏电极和源电极与氧化物半导体直接接触。

公开(公告)号：US20240272496A1

公开(公告)日：2024-08-15

申请号：US18637685

申请日：2024-04-17

Applicant: Japan Display Inc.

Inventor： Fumiya KIMURA ,  Isao SUZUMURA

IPC: G02F1/1362 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G03F7/00

CPC classification number: G02F1/136227 ,  G02F1/13394 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/1368 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133514 ,  G03F7/0007

Abstract: A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.

公开(公告)号：US20240184177A1

公开(公告)日：2024-06-06

申请号：US18428228

申请日：2024-01-31

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Arichika ISHIDA ,  Hidekazu MIYAKE ,  Hiroto MIYAKE ,  Isao SUZUMURA

IPC: G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  H01L27/1225 ,  H01L29/78633 ,  H01L29/7869 ,  G02F1/136218 ,  G02F1/13685 ,  G02F2202/10 ,  H01L29/42384

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

公开(公告)号：US20240088192A1

公开(公告)日：2024-03-14

申请号：US18515288

申请日：2023-11-21

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Akihiro HANADA ,  Marina MOCHIZUKI ,  Ryo ONODERA ,  Fumiya KIMURA ,  Isao SUZUMURA

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/14689

Abstract: The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.